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L6571A
L6571B
September 2000
s
HIGH VOLTAGE RAIL UP TO 600V
s
BCD OFF LINE TECHNOLOGY
s
15.6V ZENER CLAMP ON V
S
s
DRIVER CURRENT CAPABILITY:
- SINK CURRENT = 270mA
- SOURCE CURRENT = 170mA
s
VERY LOW START UP CURRENT: 150
A
s
UNDER VOLTAGE LOCKOUT WITH
HYSTERESIS
s
PROGRAMMABLE OSCILLATOR
FREQUENCY
s
DEAD TIME 1.25
s (L6571A) or 0.72
s
(L6571B)
s
dV/dt IMMUNITY UP TO 50V/ns
s
ESD PROTECTION
DESCRIPTION
The device is a high voltage half bridge driver with
built in oscillator. The frequency of the oscillator can
be programmed using external resistor and capaci-
tor. The internal circuitry of the device allows it to be
driven also by external logic signal.
The output drivers are designed to drive external n-
channel power MOSFET and IGBT. The internal log-
ic assures a dead time to avoid cross-conduction of
the power devices.
Two version are available: L6571A and L6571B.
They differ in the internal dead time: 1.25
s and
0.72
s (typ.)
Minidip
SO8
ORDERING NUMBERS:
L6571A
L6571AD
L6571B
L6571BD
HIGH VOLTAGE HALF BRIDGE
DRIVER WITH OSCILLATOR
BLOCK DIAGRAM
R
F
C
F
LOGIC
BIAS
REGULATOR
COMP
COMP
LEVEL
SHIFTER
BUFFER
R
F
C
F
GND
HIGH
SIDE
DRIVER
LOW SIDE
DRIVER
HVG
LVG
OUT
BOOT
V
S
R
HV
C
VS
C
BOOT
H.V.
LOAD
D96IN433
V
S
V
S
1
2
3
4
8
7
6
5
L6571A L6571B
2/8
ABSOLUTE MAXIMUM RATINGS
(*)The device has an internal zener clamp between GND and VS (typical 15.6V).Therefore the circuit should not be driven by a DC low im-
pedance power source.
Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)
THERMAL DATA
RECOMMENDED OPERATING CONDITIONS
PIN CONNECTION
Symbol
Parameter
Value
Unit
I
S
(*)
Supply Current
25
mA
V
CF
Oscillator Resistor Voltage
18
V
V
LVG
Low Side Switch Gate Output
14.6
V
V
OUT
High Side Switch Source Output
-1 to V
BOOT
- 18
V
V
HVG
High Side Switch Gate Output
-1 to V
BOOT
V
V
BOOT
Floating Supply Voltage
618
V
V
BOOT/OUT
Floating Supply vs OUT Voltage
18
V
dV
BOOT
/dt
VBOOT Slew Rate (Repetitive)
50
V/ns
dV
OUT
/dt
VOUT Slew Rate (Repetitive)
50
V/ns
T
stg
Storage Temperature
-40 to 150
C
T
j
Junction Temperature
-40 to 150
C
T
amb
Ambient Temperature (Operative)
-40 to 125
C
Symbol
Parameter
Minidip
SO8
Unit
R
th j-amb
Thermal Resistance Junction-Ambient Max
100
150
C/W
Symbol
Parameter
Min.
Max.
Unit
V
S
Supply Voltage
10
V
CL
V
V
BOOT
Floating Supply Voltage
-
500
V
V
OUT
High Side Switch Source Output
-1
V
BOOT
-V
CL
V
f
out
Oscillation Frequency
200
kHz
V
S
R
F
C
F
GND
1
3
2
4
LVG
OUT
HVG
BOOT
8
7
6
5
D94IN059
3/8
L6571A L6571B
PIN FUNCTION
ELECTRICAL CHARACTERISTCS (V
S
= 12V; V
BOOT
- V
OUT
= 12V; T
j
= 25C; unless otherwise specified.)
N
Pin
Description
1
VS
Supply input voltage with internal clamp [typ. 15.6V]
2
RF
Oscillator timing resistor pin.
A buffer set alternatively to V
S
and GND can provide current to the external resistor RF
connected between pin 2 and 3.
Alternatively, the signal on pin 2 can be used also to drive another IC (i.e. another L6569/71 to
drive a full H-bridge)
3
CF
Oscillator timing capacitor pin.
A capacitor connected between this pin and GND fixes (together with R
F
) the oscillating
frequency
Alternatively an external logic signal can be applied to the pin to drive the IC.
4
GND
Ground
5
LVG
Low side driver output.
The output stage can deliver 170mA source and 270mA sink [typ.values].
6
OUT
Upper driver floating reference
7
HVG
High side driver output.
The output stage can deliver 170mA source and 270mA sink [typ.values].
8
BOOT
Bootstrap voltage supply.
It is the upper driver floating supply.
Symbol
Pin
Parameter
Test Condition
Min.
Typ.
Max.
Unit
V
SUVP
1
VS Turn On Threshold
8.3
9
9.7
V
V
SUVN
VS Turn Off Threshold
7.3
8
8.7
V
V
SUVH
VS Hysteresis
0.7
1
1.3
V
V
CL
VS Clamping Voltage
I
S
= 5mA
14.6
15.6
16.6
V
I
SU
Start Up Current
V
S
< V
SUVN
150
250
A
I
q
Quiescent Current
V
S
> V
SUVP
500
700
A
I
BOOTLK
8
Leakage Current BOOT pin vs
GND
V
BOOT
= 580V
5
A
I
OUTLK
6
Leakage Current OUT pin vs
GND
V
OUT
= 562V
5
A
I
HVG SO
7
High Side Driver Source Current
V
HVG
= 6V
110
175
mA
I
HVG SI
High Side Driver Sink Current
V
HVG
= 6V
190
275
mA
I
LVG SO
5
Low Side Driver Source Current
V
LVG
= 6V
110
175
mA
I
LVG SI
Low Side Driver Sink Current
V
LVG
= 6V
190
275
mA
V
RFO
N
2
RF High Level Output Voltage
I
RF
= 1mA
V
S
-0.05
V
S
-0.2
V
V
RF OFF
RF Low Level Output Voltage
I
RF
= -1mA
50
200
mV
V
CFU
3
CF Upper Threshold
7.7
8
8.2
V
V
CFL
CF Lower Threshold
3.80
4
4.3
V
t
d
Internal Dead Time
L6571A
L6571B
0.85
0.50
1.25
0.72
1.65
0.94
s
s
L6571A L6571B
4/8
OSCILLATOR FREQUENCY
The frequency of the internal oscillator can be programmed using external resistor and capacitor.
The nominal oscillator frequency can be calculated using the following equation:
Where R
F
and C
F
are the external resistor and capacitor.
The device can be driven in "shut down" condition keeping the C
F
pin close to GND, but some cares have to be
taken:
1. When C
F
is to GND the high side driver is off and the low side is on
2. The forced discharge of the oscillator capacitor C
F
must not be shorter than 1us: a simple way to do this is to
limit the current discharge with a resistive path imposing R C
F
>1
s (see fig.1)
Figure 1.
Figure 2. Waveforms
DC
Duty Cycle, Ratio Between Dead
Time + Conduction Time of High
Side and Low Side Drivers
0.45
0.5
0.55
I
AVE
1
Average Current from Vs
No Load, fs = 60KHz
1.2
1.5
mA
f
out
6
Oscillation Frequency
R
T
= 12K; C
T
= 1nF
57
60
63
kHz
Symbol
Pin
Parameter
Test Condition
Min.
Typ.
Max.
Unit
f
O SC
1
2 R
F
C
F
In2
-----------------------------------------
1
1.3863 R
F
C
F
------------------------------------------
=
=
R
F
C
F
GND
M
1
2
3
4
8
7
6
5
fault signal
R
T1
T
C
V
S
V
CF
LVG
D96IN434
V
SUVP
ELECTRICAL CHARACTERISTCS (continued)
5/8
L6571A L6571B
Figure 3. Typical Dead Time vs. Temperature
Dependency (L6571A)
Figure 4. Typical Frequency vs Temperature
Dependency
Figure 5. Typical and Theoretical Oscillator
Frequency vs Resistor Value
Figure 6. Typical Rise and Fall Times vs. Load
Capacitance
Figure 7. Quiescent Current vs. Supply
Voltage.
-50
0
50
100
150
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
Temperature [C]
Dead time [
sec]
D96IN378A
-50
-25
0
25
50
75
100
125
55
56
57
58
59
60
61
62
63
64
65
Temperature [C]
Frequency [KHz]
D96IN379A
5
6
7
8 9 10
15
20
30
40
50
20
30
50
60
70
80
90
100
150
Resistor Value (Kohm)
f (KHz)
Theoretical
C=1nF
C=560pF
C=330pF
D96IN380
For both high and low side buffers @25C Tamb
0
1
2
3
4
5
6
0
50
100
150
200
250
300
C [nF]
time [nsec]
Tr
Tf
D96IN417
0
2
4
6
8
10
12
14 V
S
(V)
10
10
2
10
3
10
4
Iq (
A)
D96IN418
L6571A L6571B
6/8
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
1.75
0.069
a1
0.1
0.25
0.004
0.010
a2
1.65
0.065
a3
0.65
0.85
0.026
0.033
b
0.35
0.48
0.014
0.019
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.020
c1
45
(typ.)
D (1)
4.8
5.0
0.189
0.197
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F (1)
3.8
4.0
0.15
0.157
L
0.4
1.27
0.016
0.050
M
0.6
0.024
S
8
(max.)
(1) D and F do not include mold flash or protrusions. Mold flash or
potrusions shall not exceed 0.15mm (.006inch).
SO8
OUTLINE AND
MECHANICAL DATA
7/8
L6571A L6571B
Minidip
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
3.32
0.131
a1
0.51
0.020
B
1.15
1.65
0.045
0.065
b
0.356
0.55
0.014
0.022
b1
0.204
0.304
0.008
0.012
D
10.92
0.430
E
7.95
9.75
0.313
0.384
e
2.54
0.100
e3
7.62
0.300
e4
7.62
0.300
F
6.6
0.260
I
5.08
0.200
L
3.18
3.81
0.125
0.150
Z
1.52
0.060
OUTLINE AND
MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
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L6571A L6571B
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