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LIS3L02AS4

December 2005

Features

2.4V TO 3.6V SINGLE SUPPLY OPERATION

LOW POWER CONSUMPTION

±2g/±6g USER SELECTABLE FULL-SCALE

0.5mg RESOLUTION OVER 100Hz
BANDWIDTH

EMBEDDED SELF TEST AND POWER DOWN

OUTPUT VOLTAGE, OFFSET AND
SENSITIVITY RATIOMETRIC TO THE
SUPPLY VOLTAGE

HIGH SHOCK SURVIVABILITY

LEAD FREE AND ECOPACK COMPATIBLE

Description

The LIS3L02AS4 is a low-power three axes linear ac-
celerometer that includes a sensing element and an
IC interface able to take the information from the
sensing element and to provide an analog signal to
the external world.
The sensing element, capable of detecting the accel-
eration, is manufactured using a dedicated process
developed by ST to produce inertial sensors and ac-
tuators in silicon.
The IC interface is manufactured using a standard
CMOS process that allows high level of integration to
design a dedicated circuit which is trimmed to better
match the sensing element characteristics.
The LIS3L02AS4 has a user selectable full scale of

±2g, ±6g and it is capable of measuring accelerations
over a bandwidth of 1.5KHz for all axes. The device
bandwidth may be reduced by using external capac-
itances. A self-test capability allows to check the me-
chanical and electrical signal path of the sensor.
The LIS3L02AS4 is available in plastic SMD package
and it is specified over an extended temperature
range of -40°C to +85°C.
The LIS3L02AS4 belongs to a family of products suit-
able for a variety of applications:

Mobile terminals
Gaming and Virtual Reality input devices
Free-fall detection for data protection
Antitheft systems and Inertial Navigation
Appliance and Robotics

MEMS INERTIAL SENSOR:

3-Axis - ±2g/±6g LINEAR ACCELEROMETER

Figure 2. Block Diagram

DEMUX

S/H

CHARGE

AMPLIFIER

S/H

MUX

Y+

Z+

Y-

Z-

Voutx

Voutz

Routx

Routz

TRIMMING CIRCUIT

CLOCK

S/H

Vouty

Routy

X+

X-

SELF TEST

REFERENCE

Figure 1. Package

Table 1. Order Codes

Part Number

Package

Finishing

E-LIS3L02AS4

SO24

Tube

E-LIS3L02AS4TR

SO24

Tape & Reel

SO24

Rev. 2

LIS3L02AS4

2/14

Table 2. Pin Description

Figure 3. Pin Connection (Top view)

N°

Pin

Function

1 to 5

Internally not connected

GND

0V supply

Vdd

Power supply

Vouty

Output Voltage

Self Test (Logic 0: normal mode; Logic 1: Self-test)

Voutx

Output Voltage

Power Down (Logic 0: normal mode; Logic 1: Power-Down mode)

Voutz

Output Voltage

Full Scale selection (Logic 0: 2g Full-scale; Logic 1: 6g Full-scale)

14-15

Reserved

Leave unconnected or connect to Vdd

Reserved

Connect to Vdd or ground

Reserved

Leave unconnected or connect to Vdd

Reserved

Leave unconnected or connect to ground

19 to 24

Internally not connected

Reserved

GND

Vdd

Vouty

Voutx

Voutz

DIRECTION OF THE
DETECTABLE
ACCELERATIONS

3/14

LIS3L02AS4

Table 3. Mechanical Characteristics

(Temperature range -40°C to +85°C). All the parameters are specified @ Vdd =3.3V, T=25°C unless oth-
erwise noted

Notes: 1. The product is factory calibrated at 3.3V. The device can be powered from 2.4V to 3.6V. Voff, So and Vt parameters will vary with

supply voltage.

2. Typical specifications are not guaranteed
3. Verified by wafer level test and measurement of initial offset and sensitivity
4. Zero-g level and sensitivity are essentially ratiometric to supply voltage
5. Guaranteed by design
6. Contribution to the measuring output of an inclination/acceleration along any perpendicular axis
7. "Self test output voltage change" is defined as Vout

(Vst=Logic1)

-Vout

(Vst=Logic0)

8. "Self test output voltage change" varies cubically with supply voltage
9. When full-scale is set to

6g, "self-test output voltage change" is one third of the specified value.

10.Minimum resonance frequency Fres=1.5KHz. Sensor bandwidth=1/(2*

*110K*Cload) with Cload>1nF.

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Acceleration Range

FS pin connected to GND

±1.8

±2.0

FS pin connected to Vdd

±5.4

±6.0

Sensitivity

Full-scale = 2g

Vdd/510%

Vdd/5

Vdd/5+10%

V/g

Full-scale = 6g

Vdd/1510%

Vdd/15

Vdd/15+10%

V/g

SoDr

Sensitivity Change Vs
Temperature

Delta from +25°C

±0.01

%/°C

Voff

Zero-g Level

T = 25°C

Vdd/2-10%

Vdd/2

Vdd/2+10%

OffDr

Zero-g level Change
Vs Temperature

Delta from +25°C

±1.1

mg/°C

Non Linearity

Best fit straight line
Full-scale = 2g
X, Y axis

±0.3

±1.5

% FS

Best fit straight line;
Full-scale = 2g
Z axis

±0.6

±2

% FS

CrossAx

Cross-Axis

±2

±4

Acceleration Noise
Density

Vdd=3.3V;
Full-scale = 2g

µg/

Self test Output

Voltage Change

7,8,9

T = 25°C
Vdd=3.3V
Full-scale = 2g
X axis

-20

-50

-100

T = 25°C
Vdd=3.3V
Full-scale = 2g
Y axis

100

T = 25°C
Vdd=3.3V
Full-scale = 2g
Z axis

100

Fres

Sensing Element
Resonance

Frequency

all axes

1.5

KHz

Top

Operating
Temperature Range

-40

+85

°C

Product Weight

0.6

gram

LIS3L02AS4

4/14

Table 4. Electrical Characteristics

(Temperature range -40°C to +85°C) All the parameters are specified @ Vdd =3.3V, T=25°C unless oth-
erwise noted

Notes: 1. The product is factory calibrated at 3.3V.

2. Typical specifications are not guaranteed
3. Minimum resonance frequency Fres=1.5kHz. Sensor bandwidth=1/(2*

*110K*Cload) with Cload>1nF

Absolute Maximum Rating

Stresses above those listed as "absolute maximum ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device under these conditions is not implied.
Exposure to maximum rating conditions for extended periods may affect device reliability.

Table 5. Absolute Maximum Rating

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Vdd

Supply Voltage

2.4

3.3

3.6

Idd

Supply Current

mean value
PD pin connected
to GND

0.85

1.5

IddPdn

Supply Current in Power
Down Mode

rms value
PD pin connected
to Vdd

µA

Vst

Self Test Input

Logic 0 level

0.8

Logic 1 level

2.2

Vdd

Rout

Output Impedance

110

140

Cload

Capacitive Load Drive

320

Ton

Turn-On Time at exit from
Power Down mode

Cload in

µF

550*Cload+0.3

Symbol

Ratings

Maximum Value

Unit

Vdd

Supply Voltage

-0.3 to 7

Vin

Input Voltage on any control pin (FS, PD, ST)

-0.3 to Vdd +0.3

POW

Acceleration (Any axis, Powered, Vdd=3.3V)

3000g for 0.5 ms

10000g for 0.1 ms

UNP

Acceleration (Any axis, Not powered)

3000g for 0.5 ms

10000g for 0.1 ms

STG

Storage Temperature Range

-40 to +125

°C

ESD

Electrostatic Discharge Protection

2 (HBM)

200 (MM)

1500 (CDM)

This is an ESD sensitive device, improper handling can cause permanent damages to the part

This is a Mechanical Shock sensitive device, improper handling can cause permanent damages to the part

5/14

LIS3L02AS4

3.1 Terminology

3.1.1 Sensitivity

Describes the gain of the sensor and can be determined by applying 1g acceleration to it. As the sensor
can measure DC accelerations this can be done easily by pointing the axis of interest towards the center
of the earth, note the output value, rotate the sensor by 180 degrees (point to the sky) and note the output
value again thus applying

±1g acceleration to the sensor. Subtracting the larger output value from the

smaller one and dividing the result by 2 will give the actual sensitivity of the sensor. This value changes
very little over temperature (see sensitivity change vs. temperature) and also very little over time. The Sen-
sitivity Tolerance describes the range of Sensitivities of a large population of sensors.

3.1.2 Zero-g level

Describes the actual output signal if there is no acceleration present. A sensor in a steady state on an
horizontal surface will measure 0g in X axis and 0g in Y axis whereas the Z axis will measure +1g. The
output is ideally for a 3.3V powered sensor Vdd/2 = 1650mV. A deviation from ideal 0-g level (1650mV in
this case) is called Zero-g offset. Offset of precise MEMS sensors is to some extend a result of stress to
the sensor and therefore the offset can slightly change after mounting the sensor onto a printed circuit
board or exposing it to extensive mechanical stress. Offset changes little over temperature - see "Zero-g
Level Change vs. Temperature" - the Zero-g level of an individual sensor is very stable over lifetime. The
Zero-g level tolerance describes the range of zero-g levels of a population of sensors.

3.1.3 Self Test

Self Test allows to test the mechanical and electric part of the sensor, allowing the seismic mass to be moved
by means of an electrostatic test-force. The Self Test function is off when the ST pin is connected to GND. When
the ST pin is tied at Vdd an actuation force is applied to the sensor, simulating a definite input acceleration. In
this case the sensor outputs will exhibit a voltage change in their DC levels which is related to the selected full
scale and depending on the Supply Voltage through the device sensitivity. When ST is activated, the device
output level is given by the algebraic sum of the signals produced by the acceleration acting on the sensor and
by the electrostatic test-force. If the output signals change within the amplitude specified inside Table 3, than
the sensor is working properly and the parameters of the interface chip are within the defined specification.

3.1.4 Output impedance

Describes the resistor inside the output stage of each channel. This resistor is part of a filter consisting of
an external capacitor of at least 320pF and the internal resistor. Due to the high resistor level only small,
inexpensive external capacitors are needed to generate low corner frequencies. When interfacing with an
ADC it is important to use high input impedance input circuitries to avoid measurement errors. Note that
the minimum load capacitance forms a corner frequency beyond the resonance frequency of the sensor.
For a flat frequency response a corner frequency well below the resonance frequency is recommended.
In general the smallest possible bandwidth for an particular application should be chosen to get the best
results.

LIS3L02AS4

6/14

Functionality

The LIS3L02AS4 is a high performance, low-power, analog output three axes linear accelerometer packaged
in a SO24 package. The complete device includes a sensing element and an IC interface able to take the infor-
mation from the sensing element and to provide an analog signal to the external world.

4.1 Sensing element

A proprietary process is used to create a surface micro-machined accelerometer. The technology allows to carry
out suspended silicon structures which are attached to the substrate in a few points called anchors and are free
to move in the direction of the sensed acceleration. To be compatible with the traditional packaging techniques
a cap is placed on top of the sensing element to avoid blocking the moving parts during the moulding phase of
the plastic encapsulation.

When an acceleration is applied to the sensor the proof mass displaces from its nominal position, causing an
imbalance in the capacitive half-bridge. This imbalance is measured using charge integration in response to a
voltage pulse applied to the sense capacitor.

At steady state the nominal value of the capacitors are few pF and when an acceleration is applied the maximum
variation of the capacitive load is up to 100fF.

4.2 IC Interface

In order to increase robustness and immunity against external disturbances the complete signal processing
chain uses a fully differential structure. The final stage converts the differential signal into a single-ended one to
be compatible with the external world.

The signals of the sensing element are multiplexed and fed into a low-noise capacitive charge amplifier that im-
plements a Correlated Double Sampling (CDS) at its output to cancel the offset and the 1/f noise. The output
signal is de-multiplexed and transferred to three different S&Hs, one for each channel and made available to
the outside.

The low noise input amplifier operates at 200 kHz while the three S&Hs operate at a sampling frequency of 66
kHz. This allows a large oversampling ratio, which leads to in-band noise reduction and to an accurate output
waveform.

All the analog parameters (zero-g level, sensitivity and self-test) are ratiometric to the supply voltage. Increasing
or decreasing the supply voltage, the sensitivity and the offset will increase or decrease almost linearly. The self
test voltage change varies cubically with the supply voltage

4.3 Factory calibration

The IC interface is factory calibrated for Sensitivity (So) and Zero-g Level (Voff). The trimming values are stored
inside the device by a non volatile structure. Any time the device is turned on, the trimming parameters are
downloaded into the registers to be employed during the normal operation. This allows the user to employ the
device without further calibration.

7/14

LIS3L02AS4

Application Hints

Figure 4. LIS3L02AS4 Electrical Connection

Power supply decoupling capacitors (100nF ceramic + 10

F Al) should be placed as near as possible to

the device (common design practice).

The LIS3L02AS4 allows to band limit Voutx, Vouty and Voutz through the use of external capacitors. The
re-commended frequency range spans from DC up to 1.5 KHz. In particular, capacitors must be added at
output pins to implement low-pass filtering for antialiasing and noise reduction. The equation for the cut-
off frequency ( ) of the external filters is:

Taking in account that the internal filtering resistor (R

out

) has a nominal value equal to

, the equa-

tion for the external filter cut-off frequency may be simplified as follows:

The tolerance of the internal resistor can vary typically of ±20% within its nominal value of 110k

; thus the

cut-off frequency will vary accordingly. A minimum capacitance of 320 pF for C

load

(x, y, z) is required in

any case.

Vout Z

100nF

Cload z

LIS3L02AS4

µF

Vdd

Vout X

GND

Cload x

Cload y

(top view)

Optional

Vout Y

Optional

Digital signals

DIRECTION OF THE
DETECTABLE
ACCELERATIONS

GND

out

load

x y z

, ,

(

)

------------------------------------------------------------------------

110k

1.45

µF

load

x y z

, ,

(

)

-------------------------------------- Hz

[

]

LIS3L02AS4

8/14

Table 6. Filter Capacitor Selection, C

load

(x,y,z). Capacitance Value Choose.

5.1 Soldering information

The SO24 package is lead free qualified for soldering heat resistance according to JEDEC J-STD-020C.

5.2 Output response vs orientation

Figure 5. Output response vs orientation

Figure 5 refers to LIS3L02AS4 device powered at 3.3V

Cut-off frequency

Capacitor value

1 Hz

1500nF

10 Hz

150nF

50 Hz

30 nF

100 Hz

15 nF

200 Hz

6.8 nF

500 Hz

3 nF

X=1.65V (0g)
Y=1.65V (0g)
Z=2.31V (+1g)

X=1.65V (0g)
Y=1.65V (0g)
Z=0.99V (-1g)

TOP VIEW

X=2.31V (+1g)
Y=1.65V (0g)

Earth's Surface

X=0.99V (-1g)
Y=1.65V (0 g)

X=1.65V (0g)
Y=0.99V (-1g)

X=1.65V (0g)

Y=2.31V (+1g)

Z=1.65V (0g)

Top

Bottom

9/14

LIS3L02AS4

Typical performance Characteristics

6.1 Mechanical Characteristics at 25°C.

Figure 6. X axis Zero g Level at 3.3V

Figure 7. Y axis Zero g Level at 3.3V

Figure 8. Z axis Zero g Level at 3.3V

Figure 9. X axis Sensitivity at 3.3V

Figure 10. Y axis Sensitivity at 3.3V

Figure 11. Z axis Sensitivity at 3.3V

1.55

1.6

1.65

1.7

1.75

Zerog Level (V)

Percent of parts (%)

1.55

1.6

1.65

1.7

1.75

Zerog Level (V)

Percent of parts (%)

1.55

1.6

1.65

1.7

1.75

Zerog Level (V)

Percent of parts (%)

0.62

0.63

0.64

0.65

0.66

0.67

0.68

0.69

0.7

Sensitivity (V/g)

Percent of parts (%)

0.62

0.63

0.64

0.65

0.66

0.67

0.68

0.69

0.7

Sensitivity (V/g)

Percent of parts (%)

0.62

0.63

0.64

0.65

0.66

0.67

0.68

0.69

0.7

Sensitivity (V/g)

Percent of parts (%)

LIS3L02AS4

10/14

6.2 Mechanical Characteristics derived from measurement in the -40°C to +85°Ctemperature range

Figure 12. X axis Zero g Level Change Vs.
Temperature

Figure 13. Y axis Zero g Level Change Vs.
Temperature

Figure 14. Z axis Zero g Level Change Vs.
Temperature

Figure 15. X axis Sensitivity Change Vs.
Temperature

Figure 16. Y axis Sensitivity Change Vs.
Temperature

Figure 17. Z axis Sensitivity Change Vs.
Temperature

0.5

1.5

Zerog level change (mg/deg. C)

Percent of parts (%)

0.5

0g level change (mg/deg. C)

Percent of parts (%)

0g level change (mg/deg. C)

Percent of parts (%)

0.03

0.02

0.01

0.02

Sensitivity Change(%/deg. C)

Percent of parts (%)

0.03

0.02

0.01

0.02

Sensitivity Change (%/deg. C)

Percent of parts (%)

0.05

0.04

0.03

0.02

0.01

0.02

0.03

Sensitivity Change (%/deg. C)

Percent of parts (%)

11/14

LIS3L02AS4

6.3 Electrical Characteristics at 25°C

Figure 18. Noise density at 3.3V (X,Y axes)

Figure 19. Noise density at 3.3V (Z axis)

Figure 20. Current consumption at 3.3V

Figure 21. Current consumption in power
down mode at 3.3V

Noise density (ug/sqrt(Hz))

Percent of parts (%)

Noise density (ug/sqrt(Hz))

Percent of parts (%)

0.4

0.6

0.8

1.2

1.4

current consumption (mA)

Percent of parts (%)

1.2

1.3

1.4

1.5

1.6

1.7

1.8

current consumption (uA)

Percent of parts (%)

LIS3L02AS4

12/14

Package Information

In order to meet environmental requirements, ST offers these devices in ECOPACK

packages. These pack-

ages have a Lead-free second level interconnect. The category of second Level Interconnect is marked on the
package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related
to soldering conditions are also marked on the inner box label.

ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.

Figure 22. SO24 Mechanical Data & Package Dimensions

OUTLINE AND

MECHANICAL DATA

DIM.

inch

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

2.35

2.65

0.093

0.104

0.10

0.30

0.004

0.012

0.33

0.51

0.013

0.200

0.23

0.32

0.009

0.013

(1)

15.20

15.60

0.598

0.614

7.40

7.60

0.291

0.299

1.27

0.050

10.0

10.65

0.394

0.419

0.25

0.75

0.010

0.030

0.40

1.27

0.016

0.050

0° (min.), 8° (max.)

ddd

0.10

0.004

(1) "D" dimension does not include mold flash, protusions or gate

burrs. Mold flash, protusions or gate burrs shall not exceed
0.15mm per side.

SO24

0070769 C

Weight: 0.60gr

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics.

All other names are the property of their respective owners

STMicroelectronics group of companies

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Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

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LIS3L02AS4

Document Outline

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Document Outline

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: LIS3L02AS4