P01xxxA/B
January 1995
SENSITIVE GATE SCR
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(180
conduction angle)
Tl= 55
C
0.8
A
I
T(AV)
Mean on-state current
(180
conduction angle)
Tl= 55
C
0.5
A
I
TSM
Non repetitive surge peak on-state current
(T
j
initial = 25
C )
tp = 8.3 ms
8
A
tp = 10 ms
7
I
2
t
I
2
t Value for fusing
tp = 10 ms
0.24
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 10 mA
di
G
/dt = 0.1 A/
s.
30
A/
s
T
stg
T
j
Storage and operating junction temperature range
- 40, + 150
- 40, + 125
C
Tl
Maximum lead temperature for soldering during 10s at
2mm from case
260
C
ABSOLUTE RATINGS (limiting values)
TO92
(Plastic)
P01xxxA
I
T(RMS)
= 0.8A
V
DRM
= 100V to 400V
Low I
GT
< 1
A max to < 200
A
FEATURES
Symbol
Parameter
Voltage
Unit
A
B
C
D
V
DRM
V
RRM
Repetitive peak off-state voltage
T
j
= 125
C R
GK
= 1K
100
200
300
400
V
The P01xxxA/B series of SCRs uses a high
performance planar PNPN technology. These
parts
are
intended
for
general
purpose
applications where low gate sensitivity is required.
DESCRIPTION
RD26
(Plastic)
P01xxxB
K
G
A
A
G
K
1/5
P
G (AV)
= 0.1 W P
GM
= 2 W (tp = 20
s)
I
GM
= 1 A (tp = 20
s)
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
150
C/W
Rth(j-l)
Junction to leads for DC
80
C/W
THERMAL RESISTANCES
Symbol
Test Conditions
Sensitivity
Unit
02
09
11
15
18
I
GT
V
D
=12V (DC) R
L
=140
Tj= 25
C
MIN
4
15
0.5
A
MAX
200
1
25
50
5
V
GT
V
D
=12V (DC) R
L
=140
Tj= 25
C
MAX
0.8
V
V
GD
V
D
=V
DRM
R
L
=3.3k
R
GK
= 1 K
Tj= 125
C
MIN
0.1
V
V
RGM
I
RG
=10
A
Tj= 25
C
MIN
8
V
tgd
V
D
=V
DRM
I
TM
= 3 x I
T(AV
)
dI
G
/dt = 0.1A/
s
I
G
= 10mA
Tj= 25
C
TYP
0.5
s
I
H
I
T
= 50mA R
GK
= 1 K
Tj= 25
C
MAX
5
mA
I
L
I
G
=1mA R
GK
= 1 K
Tj= 25
C
MAX
6
mA
V
TM
I
TM
= 1.6A tp= 380
s
Tj= 25
C
MAX
1.93
V
I
DRM
I
RRM
V
D
= V
DRM
R
GK
= 1 K
V
R
= V
RRM
Tj= 25
C
MAX
1
A
Tj= 125
C
MAX
100
A
dV/dt
V
D
=67%V
DRM
R
GK
= 1 K
Tj= 125
C
MIN
25
25
50
100
30
V/
s
tq
I
TM
= 3 x I
T(AV
) V
R
=35V
dI/dt=10A/
s
tp=100
s
dV/dt=10V/
s
V
D
= 67%V
DRM
R
GK
= 1 K
Tj= 125
C
MAX
200
s
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
P
01
02
A
A
SCR PLANAR
CURRENT
PACKAGES :
A = TO92 B = RD26
VOLTAGE
SENSITIVITY
P01xxxA/B
2/5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0.2
0.4
0.6
0.8
1
P (W)
360
O
= 180
o
= 120
o
= 90
o
= 60
o
= 30
o
DC
I
(A)
T(AV)
Fig.1 : Maximum average power dissipation ver-
sus average on-state current.
0
10
20
30
40
50
60
70
80
90 100 110 120 130
0
0.2
0.4
0.6
0.8
1
I
(A)
T(AV)
= 180
o
DC
Tlead ( C)
o
Fig.3 : Average on-state current versus lead tem-
perature.
Igt
Ih
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-40
-20
0
20
40
60
80
100
120
140
Igt[Tj]
Igt[Tj=25 C]
o
Ih[Tj]
Ih[Tj=25 C]
o
Tj( C)
o
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
0
20
40
60
80
100
120
140
0
0.2
0.4
0.6
0.8
1
-45
-65
-85
-105
-125
P (W)
Tlead ( C)
o
Rth (j-l)
Rth (j-a )
Tamb ( C)
o
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tlead).
1E-3
1E-2
1E-1
1 E+0
1 E+1
1E +2 5 E+2
0.01
0.10
1.00
Zth(j-a)/Rth(j-a)
tp (s )
Fig.4 : Relative variation of thermal impedance
junction to ambient versus pulse duration.
1
10
100
1,000
0
1
2
3
4
5
6
7
8
Tj initial = 25 C
o
Number of cycles
I
(A)
TSM
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
P01xxxA/B
3/5
1
10
0.1
1
10
100
I
(A). I
2
t (A
2
s)
TSM
Tj initial = 25 C
o
ITSM
tp(ms)
I
2
t
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp
10ms, and
corresponding value of I
2
t.
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0.1
1
10
I
(A)
TM
Tj ini tial
25 C
o
Tj max
V
(V)
TM
Tj max
Vto =0.95 V
Rt =0. 600
Fig.8 : On-state characteristics (maximum values).
1 .0 E+0 0 1. 0E+01 1.0 E+ 02 1. 0E+ 03 1 .0 E+0 4 1. 0E+05 1. 0E+ 06
0.1
1.0
5.0
Ih(Rgk)
Ih(Rgk=1k
)
Tj =25 C
o
Rgk( )
Fig.9 : Relative variation of holding current versus
gate-cathode resistance (typical values).
P01xxxA/B
4/5
PACKAGE MECHANICAL DATA
TO92 (Plastic)
D
F
a
E
B
A
C
REF.
DIMENSIONS
Millimeters
Inches
Typ.
Min.
Max.
Typ.
Min. Max.
A
1.35
0.053
B
4.7
0.185
C
2.54
0.100
D
4.4
4.8
0.173 0.189
E
12.7
0.500
F
3.7
0.146
a
0.45
0.017
Marking : type number
Weight : 0.2 g
PACKAGE MECHANICAL DATA
RD26 (Plastic)
D
G
a
E
45
B
A
C
F
REF.
DIMENSIONS
Millimeters
Inches
Typ.
Min.
Max.
Typ.
Min.
Max.
A
2.54
0.100
B
3.7
0.146
C
1.35
0.053
D
4.4
4.8
0.173 0.189
E
12.7
0.500
F
4.7
0.185
G
3.0
0.118
a
0.45
0.177
Marking : type number
Weight : 0.2 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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P01xxxA/B
5/5
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