ChipFind - документация

Электронный компонент: P10NC60H

Скачать:  PDF   ZIP

Document Outline

TARGET SPECIFICATION
Rev 1
November 2005
1/9
9
This is a preliminary information on a new product now in development. Details are subject to change without notice
STGP10NC60H
N-CHANNEL 10A - 600V - TO-220
VERY FAST PowerMESHTM IGBT
General features
LOWER ON-VOLTAGE DROP (V
cesat
)
LOWER C
RES
/ C
IES
RATIO (NO
CROSS-CONDUCTION SUSCEPTIBILITY)
VERY SOFT ULTRA FAST RECOVERY
ANTIPARALLEL DIODE
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
TM
IGBTs, with outstanding
performances. The suffix "H" identifies a family
optimized for high frequency applications in order
to achieve very high switching performances
(reduced tfall) mantaining a low voltage drop.
Applications
HIGH FREQUENCY MOTOR CONTROLS
SMPS and PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
MOTOR DRIVERS
Order codes
Internal schematic diagram
Type
V
CES
V
CE(sat)
(Max)@ 25C
I
C
@100C
STGP10NC60H
600V
< 2.5V
10A
1
2
3
TO-220
Sales Type
Marking
Package
Packaging
STGP10NC60H
P10NC60H
TO-220
TUBE
www.st.com
1 Electrical ratings
STP10NC60H
2/9
1 Electrical
ratings
Table 1.
Absolute maximum ratings
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
I
C
Note
5
Collector Current (continuous) at T
C
= 25C
20
A
I
C
Note
5
Collector Current (continuous) at T
C
= 100C
10
A
I
CM
Note
1
Collector Current (pulsed)
40
W
V
GE
Gate-Emitter Voltage
20
A
P
TOT
Total Dissipation at T
C
= 25C
60
W
T
stg
Storage Temperature
55 to 150
C
T
j
Operating Junction Temperature
T
l
Maximum Lead Temperature For Soldering
Purpose (for 10sec. 1.6 mm from case)
300
C
Rthj-case
Thermal Resistance Junction-case Max
2.08
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
STP10NC60H
2 Electrical characteristics
3/9
2 Electrical
characteristics
(T
CASE
= 25 C unless otherwise specified)
Table 3.
On/Off
Table 4.
Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
C
= 1mA, V
GE
= 0
600
V
I
CES
Collector cut-off Current
(V
GE
= 0)
V
CE
= Max Rating,T
C
= 25C
V
CE
=Max Rating,T
C
= 125C
10
1
A
mA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20V , V
CE
= 0
100
nA
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250A
5
7
V
V
CE(sat)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 5A
V
GE
= 15V, I
C
= 5A, Tc= 125C
1.9
1.7
2.5
V
V
g
fs
Forward Transconductance
V
CE
= 15V
,
I
C
= 5A
TBD
S
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 25V, f = 1MHz,V
GE
= 0
TBD
TBD
TBD
pF
pF
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 390V, I
C
= 5A,
V
GE
= 15V,
(see Figure 2)
TBD
TBD
TBD
nC
nC
nC
2 Electrical characteristics
STP10NC60H
4/9
Table 5.
Switching On/Off (inductive load)
Table 6.
Switching energy (inductive load)
(1)Pulse width limited by max. junction temperature
(2) Pulsed: Pulse duration = 300 s, duty cycle 1.5%
(3) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the
IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25C and 125C)
(4) Turn-off losses include also the tail of the collector current
(5) Calculated according to the iterative formula:
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
CC
= 390V, I
C
= 5A
R
G
= 10
, V
GE
= 15V, Tj= 25C
(see Figure 3)
TBD
TBD
TBD
ns
ns
A/s
t
d(on)
t
r
(di/dt)
on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
CC
= 390V, I
C
= 5A
R
G
= 10
, V
GE
= 15V, Tj=125C
(see Figure 3)
TBD
TBD
TBD
ns
ns
A/s
t
r
(V
off
)
t
d
(
off
)
t
f
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
V
cc
= 390V, I
C
= 5A,
R
GE
= 10
, V
GE
= 15V,T
J
=25C
(see Figure 3)
TBD
TBD
TBD
ns
ns
ns
t
r
(V
off
)
t
d
(
off
)
t
f
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
V
cc
= 390V, I
C
= 5A,
R
GE
=10
, V
GE
=15V, Tj=125C
(see Figure 3)
TBD
TBD
TBD
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Eon
Note
3
E
off
Note
4
E
ts
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
V
CC
= 390V, I
C
= 75A
R
G
= 10
, V
GE
= 15V, Tj= 25C
(see Figure 3)
TBD
TBD
TBD
J
J
J
Eon
Note
3
E
off
Note
4
E
ts
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
V
CC
= 390V, I
C
= 5A
R
G
= 10
, V
GE
= 15V, Tj= 125C
(see Figure 3)
TBD
TBD
TBD
J
J
J
I
C
T
C
(
)
T
JMAX
T
C
R
THJ
C
V
C ESAT MAX
(
)
T
C
I
C
,
(
)
--------------------------------------------------------------------------------------------------
=
STP10NC60H
3 Test Circuits
5/9
3 Test
Circuits
Figure 1.
Test Circuit for Inductive Load
Switching
Figure 2.
Gate Charge Test Circuit
Figure 3.
Switching Waveform