ChipFind - документация

Электронный компонент: P16NE

Скачать:  PDF   ZIP
STP16NE06
STP16NE06FP
N - CHANNEL 60V - 0.08
- 16A - TO-220/TO-220FP
STripFET
TM
POWER MOSFET
PRELIMINARY DATA
s
TYPICAL R
DS(on)
= 0.08
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
175
o
C OPERATING TEMPERATURE
s
HIGH dV/dt CAPABILITY
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP16NE06
STP16NE06FP
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate-source Voltage
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
16
11
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
10
7
A
I
DM
(
)
Drain Current (pulsed)
64
64
A
P
tot
Total Dissipation at T
c
= 25
o
C
60
30
W
Derating Factor
0.4
0.2
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
2000
V
dV/dt
Peak Diode Recovery voltage slope
6
V/ns
T
stg
Storage Temperature
-65 to 175
o
C
T
j
Max. Operating Junction Temperature
175
o
C
(
) Pulse width limited by safe operating area (
1
) I
SD
16 A, di/dt
200 A/
s, V
DD
V
(BR)DSS
, T
j
T
JMAX
'
New RDS (on) spec. starting from JULY 98
TYPE
V
DSS
R
DS(on)
I
D
STP16NE06
STP16NE06FP
60 V
60 V
< 0.100
< 0.100
16 A
11 A
June 1998
TO-220 TO-220FP
1
2
3
1
2
3
1/9
THERMAL DATA
TO-220
TO-220FP
R
thj-case
Thermal Resistance Junction-case Max
2.5
5
o
C/W
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
16
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
80
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 125
o
C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
20 V
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
V
DS
= V
GS
I
D
= 250
A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V I
D
= 8 A
0.080
0.100
I
D(on )
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
16
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
> I
D(on)
x R
DS(on)max
I
D
=8 A
6
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0
760
100
30
1000
140
45
pF
pF
pF
STP16NE06/FP
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 30 V I
D
= 8 A
R
G
=4.7 W V
GS
= 10 V
10
35
80
40
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 40 V I
D
= 16 A V
GS
= 10 V
20
5
7
30
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 48 V I
D
= 16 A
R
G
=4.7
V
GS
= 10 V
7
18
30
10
25
45
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
16
64
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 16 A V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 16 A di/dt = 100 A/
s
V
DD
= 30 V T
j
= 150
o
C
70
0.21
6
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
STP16NE06/FP
3/9
Thermal Impedance for TO-220
Output Characteristics
Transconductance
Thermal Impedance for TO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP16NE06/FP
4/9
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STP16NE06/FP
5/9