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STPS10150CT/CG
July 2003 - Ed: 5B
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 5 A
V
RRM
150 V
Tj
175C
V
F
(max)
0.75 V
MAIN PRODUCT CHARACTERISTICS
s
HIGH JUNCTION TEMPERATURE CAPABILITY
s
GOOD TRADE OFF BETWEEN LEAKAGE CUR-
RENT AND FORWARD VOLTAGE DROP
s
LOW LEAKAGE CURRENT
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual center tap schottky rectifier designed for
high frequency Switched Mode Power Sup-
plies.
DESCRIPTION
TO-220AB
STPS10150CT
K
A2
A1
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
150
V
I
F(RMS)
RMS forward current
10
A
I
F(AV)
Average forward current
= 0.5
TO-220AB
D
2
PAK
Tc = 155C
per diode
per device
5
10
A
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
120
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
3100
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
D
2
PAK
STPS10150CG
K
A2
A1
A1
A2
K
STPS10150CT/CG
2/5
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
TO-220AB / D
2
PAK
Per diode
4
C/W
TO-220AB / D
2
PAK
Total
2.4
R
th (c)
TO-220AB / D
2
PAK
Coupling
0.7
THERMAL RESISTANCES
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
2.0
A
Tj = 125C
0.40
2.0
mA
V
F
**
Forward voltage drop
Tj = 25
C
I
F
= 5 A
0.92
V
Tj = 125C
I
F
= 5 A
0.69
0.75
Tj = 25
C
I
F
= 10 A
1
Tj = 125C
I
F
= 10 A
0.79
0.85
Pulse test :
* tp = 5 ms,
< 2%
** tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation:
P = 0.65 I
F(AV)
+ 0.02 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IF(av) (A)
PF(av)(W)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
Tamb(C)
IF(av)(A)
Rth(j-a)=Rth(j-c)
Rth(j-a)=15C/W
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
= 0.5, per diode).
STPS10150CT/CG
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1E-3
1E-2
1E-1
1E+0
0
10
20
30
40
50
60
70
80
t(s)
IM(A)
Tc=50C
Tc=75C
Tc=125C
I
M
t
=0.5
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
= 0.5
= 0.2
= 0.1
Single pulse
T
=tp/T
tp
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
0
25
50
75
100
125
150
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
VR(V)
IR(A)
Tj=75C
Tj=25C
Tj=125C
Tj=150C
Tj=175C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
1
2
5
10
20
50
100
200
10
20
50
100
200
VR(V)
C(pF)
F=1MHz
Tj=25C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS10150CT/CG
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PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
0.0 0.2
0.4 0.6
0.8 1.0
1.2
1.4 1.6
1.8 2.0
0.1
1.0
10.0
100.0
VFM(V)
IFM(A)
Tj=125C
Tj=25C
Tj=125C
Typical values
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
0
2
4
6
8
10
12
14
16
18
20
0
10
20
30
40
50
60
70
80
S(cm)
Rth(j-a) (C/W)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit
board,
copper
thickness:
35m)
(STPS10150CG only).
STPS10150CT/CG
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PACKAGE MECHANICAL DATA
D
2
PAK
A
C2
D
R
2.0 MIN.
FLAT ZONE
A2
V2
C
A1
G
L
L3
L2
B
B2
E
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.30
4.60 0.169
0.181
A1
2.49
2.69 0.098
0.106
A2
0.03
0.23 0.001
0.009
B
0.70
0.93 0.027
0.037
B2
1.25
1.40
0.049 0.055
C
0.45
0.60 0.017
0.024
C2
1.21
1.36 0.047
0.054
D
8.95
9.35 0.352
0.368
E
10.00
10.28 0.393
0.405
G
4.88
5.28 0.192
0.208
L
15.00
15.85 0.590
0.624
L2
1.27
1.40 0.050
0.055
L3
1.40
1.75 0.055
0.069
R
0.40
0.016
V2
0
8
0
8
8.90
3.70
1.30
5.08
16.90
10.30
FOOT PRINT DIMENSIONS (in millimeters)
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS10150CT
STPS10150CT
TO-220AB
2.2 g
50
Tube
STPS10150CG
STPS10150CG
D
2
PAK
1.48 g
50
Tube
STPS10150CG-TR
STPS10150CG
D
2
PAK
1.48 g
1000
Tape & reel
s
EPOXY MEETS UL94, V0
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