RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.400 x .600 2L FL (M198)
hermetically sealed
.
P
OUT
=
500 W MIN. WITH 8.5 dB MIN.
GAIN
.
10:1 LOAD VSWR CAPABILITY @ 10
S.,
1% DUTY
.
SIXPAC
TM
HERMETIC METAL/CERAMIC
PACKAGE
.
EMITTER SITE BALLASTED OVERLAY
GEOMETRY
.
REFRACTORY/GOLD METALLIZATION
.
LOW THERMAL RESISTANCE
.
INTERNAL INPUT/OUTPUT MATCHING
.
CHARACTERIZED UNDER 32
S.,2%
DUTY CYCLE PULSE CONDITIONS
DESCRIPTION
The AM1011-500 device is a high power Class C
transistor specifically designed for L-Band Av-
ionic applications involving high pulse burst duty
cycles.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures. Low RF thermal resistance and computer-
ized automatic wire bonding techniques ensure
high reliability and product consistency.
The AM1011-500 is supplied in the SIXPAC
TM
Hermetic metal/ceramic package with internal in-
put/output matching structures.
PIN CONNECTION
BRANDING
1011-500
ORDER CODE
AM1011-500
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
P
DISS
Power Dissipation*
(T
C
100
C)
1,360
W
I
C
Device Current*
27
A
V
CC
Collector-Supply Voltage*
55
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
0.11
C/W
*Applies only to rated RF amplifier operation
AM1011-500
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
EL ECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbo l
Test Con dition s
Value
Uni t
Min .
Typ .
Max.
P
OUT
f
=
1090 MHz
P
IN
=
70 W
V
CC
=
50 V
500
--
--
W
hc
f
=
1090 MHz
P
OUT
=
500 W
V
CC
=
50 V
40
--
--
%
G
P
f
=
1090 MHz
P
OUT
=
500 W
V
CC
=
50 V
8.5
--
--
dB
Load
Mismatch
P
OUT
=
500 W Peak
VSWR
=
10:1, 10
S, 1% Duty
F
=
1090MHz
VSWR
=
5:1, 32
S, 2% Duty
V
CC
=
50 V
No Degradation in Output
Power
Note:
Pul se Width
=
32
Sec, D uty Cycle
=
2%
STATIC
Symbo l
T est Con ditio ns
Value
Un it
Mi n.
Typ .
Max.
BV
CBO
I
C
=
50 mA
I
E
=
0 mA
70
--
--
V
BV
EBO
I
E
=
30 mA
I
C
=
0 mA
3.0
--
--
V
BV
CES
I
C
=
50 mA
V
BE
=
0 V
70
--
--
V
I
CES
V
BE
=
0 V
V
CE
=
50 V
--
--
40
mA
h
FE
V
CE
=
5 V
I
C
=
1.0 A
10
--
200
--
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT & COLLECTOR
EFFICIENCY vs POWER INPUT
P
OUT
C
POWER OUTPUT & COLLECTOR
EFFICIENCY vs POWER INPUT
C
P
OUT
* Pulse Burst conditions:
128
Sec train, 0.5
Sec on,
0.5
Sec off; with a period of 6.4 msec.
AM1011-500
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0198 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron-
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-TH OMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
AM1011-500
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