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STPS61H100CW
October 2003 - Ed: 1A
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
100
V
I
F(RMS)
RMS forward current
80
A
I
F(AV)
Average forward current
Tc = 150C
= 0.5
Per diode
Per device
30
60
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
450
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
26400
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature *
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
A1
K
A2
I
F(AV)
2 x 30 A
V
RRM
100 V
Tj (max)
175C
V
F
(max)
0.67 V
MAJOR PRODUCTS CHARACTERISTICS
Dual center tap Schottky rectifiers suited for high
frequency switch mode power supply.
Packaged in TO-247, this devices is intended for
use to enhance the reliability of the application.
DESCRIPTION
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
HIGH FREQUENCY OPERATION
FEATURES AND BENEFITS
A1
K
A2
TO-247
STPS61H100CW
2/4
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
Tj = 25C
V
R
= V
RRM
3
16
A
Tj = 125C
4
16
mA
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 30 A
0.79
V
Tj = 125C
I
F
= 30 A
0.63
0.67
Tj = 25
C
I
F
= 60 A
0.93
Tj = 125C
I
F
= 60 A
0.72
0.78
Pulse test : * tp = 380
s,
< 2%
To evaluate the conduction losses use the following equation:
P = 0.56 x IF(AV) + 0.0036 IF
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
Per diode
Total
0.9
0.6
C/W
R
th(j-c)
Junction to case
Coupling
0.3
C/W
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
P
(W)
F(AV)
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
40
I
(A)
F(AV)
T
=tp/T
tp
= 0.05
= 0.1
= 0.2
= 0.5
= 1
Fig. 1: Conduction losses versus average current
(per diode).
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 2: Normalized avalanche power derating
versus pulse duration.
0
0.2
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus junction temperature.
0
5
10
15
20
25
30
35
0
25
50
75
100
125
150
175
I
(A)
F(AV)
T
(C)
amb
T
=tp/T
tp
R
=R
th(j-a)
th(j-c)
R
=15C/W
th(j-a)
Fig. 4: Average forward current versus ambient
temperature (
=0.5, per diode).
STPS61H100CW
3/4
0
50
100
150
200
250
300
350
400
1.E-03
1.E-02
1.E-01
1.E+00
I (A)
M
I
M
t
=0.5
t(s)
T =25C
c
T =75C
c
T =125C
c
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Z
/R
th(j-c)
th(j-c)
= 0.5
= 0.2
= 0.1
Single pulse
T
=tp/T
tp
t (s)
p
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
I (mA)
R
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
10
20
30
40
50
60
70
80
90
100
V (V)
R
T =125C
j
T =150C
j
T =100C
j
T =50C
j
T =25C
j
T =75C
j
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
0.10
1.00
10.00
1
10
100
C(nF)
V (V)
R
F=1MHz
V
=30mV
T =25C
OSC
RMS
j
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1
10
100
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
I
(A)
FM
V
(V)
FM
T =25C
(maximum values)
j
T =125C
(maximum values)
j
T =125C
(typical values)
j
Fig. 9: Forward voltage drop versus forward
current (per diode).
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STPS61H100CW
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners.
2003 STMicroelectronics - All rights reserved.
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Cooling method : C
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
PACKAGE MECHANICAL DATA
TO-247
F2
F1
V2
L4
L2
L1
L3
D
L
L5
M
E
H
V
V
A
Dia.
F3
F4
G
= =
F(x3)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ. Max. Min.
Typ. Max.
A
4.85
5.15 0.191
0.203
D
2.20
2.60 0.086
0.102
E
0.40
0.80 0.015
0.031
F
1.00
1.40 0.039
0.055
F1
3.00
0.118
F2
2.00
0.078
F3
2.00
2.40 0.078
0.094
F4
3.00
3.40 0.118
0.133
G
10.90
0.429
H
15.45
15.75 0.608
0.620
L
19.85
20.15 0.781
0.793
L1
3.70
4.30 0.145
0.169
L2
18.50
0.728
L3
14.20
14.80 0.559
0.582
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00 0.078
0.118
V
5
5
V2
60
60
Dia.
3.55
3.65 0.139
0.143
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS61H100CW
STPS61H100CW
TO-247
4.4g
30
Tube
Epoxy meets UL94,V0
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