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Электронный компонент: T1235H

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T1235H Series
SNUBBERLESSTM HIGH TEMPERATURE
12A TRIAC
S
April 2002 - Ed: 5A
MAIN FEATURES:
DESCRIPTION
Specifically designed for use in high temperature
environment (found in hot appliances such as
cookers, ovens, hobs, electric heaters, coffee
machines...), the new 12 Amps T1235H triacs
provide an enhanced performance in terms of
power loss and thermal dissipation. This allows for
optimization of the heatsinking dimensioning,
leading to space and cost effectivness when
compared to electro-mechnical solutions.
Based on ST snubberless technology, they offer
high commutation switching capabilities and high
noise immunity levels. And, thanks to their clip
assembly technique, they provide a superior
performance in surge current handling.
Symbol
Value
Unit
I
T(RMS)
12
A
V
DRM
/V
RRM
600
V
I
GT (Q
1
)
35
mA
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
Tc = 135C
12
A
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25C)
F = 60 Hz
t = 16.7 ms
145
A
F = 50 Hz
t = 20 ms
140
I
t
I
t Value for fusing
tp = 10 ms
112
A
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
100 ns
F = 120 Hz
Tj = 150C
50
A/s
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
tp = 10 ms
Tj = 25C
700
V
I
GM
Peak gate current
tp = 20 s
Tj = 150C
4
A
P
G(AV)
Average gate power dissipation
Tj = 150C
1
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 150
C
G
A2
A1
G
A2
A2
A1
A2
A2
G
A1
TO-220AB
(T1235-T)
D
2
PAK
(T1235-G)
T1235H Series
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ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
STATIC CHARACTERISTICS
Note 1: minimum IGT is guaranted at 10% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
S: Copper surface under tab
PRODUCT SELECTOR
Symbol
Test Conditions
Quadrant
Value
Unit
I
GT
(1)
V
D
= 12 V R
L
= 33
I - II - III
MAX.
35
mA
V
GT
I - II - III
MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
Tj = 150C
I - II - III
MIN.
0.15
V
I
H
(2)
I
T
= 100 mA
MAX.
35
mA
I
L
I
G
= 1.2 I
GT
I - III
MAX.
50
mA
II
80
dV/dt (2)
V
D
= 67 % V
DRM
gate open Tj = 150C
MIN.
300
V/s
(dI/dt)c (2)
Without snubber Tj = 150C
MIN.
5.3
A/ms
Symbol
Test Conditions
Value
Unit
V
TM
(2)
I
TM
= 17 A tp = 380 s
Tj = 25C
MAX.
1.5
V
V
to
(2)
Threshold voltage
Tj = 150C
MAX.
0.80
V
R
d
(2)
Dynamic resistance
Tj = 150C
MAX.
25
m
I
DRM
I
RRM
V
DRM
= V
RRM
Tj = 25C
MAX.
5
A
Tj = 150C
5.5
mA
V
D
/V
R
= 400 V (at mains peak voltage)
Tj = 150C
3.5
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (AC)
D
PAK
TO-220AB
1.2
C/W
R
th(j-a)
Junction to ambient
S = 1 cm
D
PAK
45
C/W
TO-220AB
60
Part Number
Voltage
Sensitivity
Type
Package
T1235H-600G
600 V
35 mA
Snubberless
D
PAK
T1235H-600T
600 V
35 mA
Snubberless
TO-220AB
T1235H Series
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ORDERING INFORMATION
OTHER INFORMATION
Part Number
Marking
Weight
Base
quantity
Packing
mode
T1235H-600G
T1235H600G
1.5 g
50
Tube
T1235H-600G-TR
T1235H600G
1.5 g
1000
Tape & reel
T1235H-600T
T1235H600T
2.3 g
250
Bulk
T1235H-600TRG
T1235H-600T
2.3 g
50
Tube
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
Fig. 2-1: RMS on-state current versus case
temperature (full cycle).
Fig. 2-2: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35
m), full cycle.
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
T 12 35 H - 600 G (-TR)
TRIAC
SERIES
SENSITIVITY:
35: 35mA
VOLTAGE:
600: 600V
CURRENT: 12A
PACKAGE:
G: D PAK
T: TO-220AB
2
PACKING MODE:
Blank: Tube (D PAK)
Blank: Bulk (TO-220AB)
RG: Tube (TO-220AB)
-TR: Tape & Reel (D PAK)
2
2
HIGH TEMPERATURE
0
2
4
6
8
10
12
0
2
4
6
8
10
12
14
IT(RMS)(A)
P(W)
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
Tc(C)
IT(RMS)(A)
0
25
50
75
100
125
150
0
1
2
3
4
5
Tamb(C)
IT(RMS)(A)
D PAK
(S=1cm )
2
2
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.10
1.00
tp(s)
K=[Zth/Rth]
Zth(j-c)
Zth(j-a)
T1235H Series
4/7
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of It.
Fig. 7: On-state characteristics (maximum
values).
Fig. 8: Relative variation of critical rate of
decrease of main current versus junction
temperature (typical values).
Fig. 9: Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
-40
-20
0
20
40
60
80
100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
Tj(C)
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25C]
IGT
IH & IL
1
10
100
1000
0
25
50
75
100
125
150
Number of cycles
ITSM(A)
Non repetitive
Tj initial=25C
Repetitive
Tc=135C
One cycle
t=20ms
0.01
0.10
1.00
10.00
100
1000
2000
tp(ms)
ITSM(A),It(As)
Tj initial=25C
ITSM
It
dI/dt limitation:
50A/s
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
200
VTM(V)
ITM(A)
Tj=25C
Tj max.
Vto = 0.80 V
Rd = 25 m
Tj max.
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
Tj(C)
(dI/dt)c [Tj] / (dI/dt)c [Tj=150C]
0.1
1.0
10.0
100.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
(dV/dt)c (V/s)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
T1235H Series
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Fig. 10: Leakage current versus junction
temperature for different values of blocking
voltage (typical values).
Fig. 11: Acceptable repetitive peak off-state
voltage versus case-ambient thermal resistance.
Fig. 12: DPAK Thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35
m).
50
75
100
125
150
1E-3
1E-2
1E-1
1E+0
1E+1
Tj(C)
IDRM/IRRM(mA)
VD=VR=600V
VD=VR=400V
VD=VR=200V
0
2
4
6
8
10
12
14
16
18
20
0
100
200
300
400
500
600
700
Rth(c-a)(C/W)
VDRM/VRRM(V)
Tj=150C
Rth(j-c)=1.2C/W
0
4
8
12
16
20
24
28
32
36
40
0
10
20
30
40
50
60
70
80
S(cm)
Rth(j-a) (C/W)
DPAK