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Электронный компонент: T1630-700W

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T1620W
T1630W
April 1995
SNUBBERLESS TRIAC
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(360
conduction angle)
Tc= 75
C
16
A
I
TSM
Non repetitive surge peak on-state current
(T
j
initial = 25
C )
tp = 16.7 ms
(1 cycle, 60 Hz)
165
A
tp = 10 ms
(1/2 cycle, 50 Hz)
195
I
2
t
I
2
t Value (half-cycle, 50 Hz)
tp = 10 ms
190
A
2
s
dI/dt
Critical rate of rise of on-state current
Gate supply : I
G
= 500 mA
dI
G
/dt = 1 A/
s.
Repetitive
F = 50 Hz
20
A/
s
Non Repetitive
100
T
stg
T
j
Storage temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
C
Tl
Maximum lead temperature for soldering during 10s at 4.5 mm
from case
260
C
ABSOLUTE RATINGS (limiting values)
I
TRMS
= 16 A
V
DRM
= V
RRM
= 400V to 700V
EXCELLENT SWITCHING PERFORMANCES
INSULATING VOLTAGE = 1500V
(RMS)
U.L. RECOGNIZED : E81734
FEATURES
Symbol
Parameter
T1620 / 1630-xxxW
Unit
400
600
700
V
DRM
V
RRM
Repetitive peak off-state voltage
T
j
= 125
C
400
600
700
V
The T1620/1630W triacs use high performance
glass passivated chip technology, housed in a fully
molded plastic ISOWATT220AB package.
The SNUBBERLESS
TM
concept offers suppres-
sion of R-C network, and is suitable for applica-
tions such as phase control and static switch on
inductive and resistive loads.
DESCRIPTION
ISOWATT220AB
(Plastic)
A
1
A
2
G
A
1
A
2
G
1/5
P
G (AV)
= 1 W P
GM
= 10 W (tp = 20
s)
I
GM
= 4 A (tp = 20
s)
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
50
C/W
Rth(j-c)
Junction to case for A.C (360
conduction angle)
2.5
C/W
THERMAL RESISTANCES
Symbol
Test Conditions
Quadrant
T1620
T1630
Unit
I
GT
V
D
=12V (DC) R
L
=33
Tj= 25
C
I-II-III
MAX
20
30
mA
V
GT
V
D
=12V (DC) R
L
=33
Tj= 25
C
I-II-III
MAX
1.5
V
V
GD
V
D
=V
DRM
R
L
=3.3k
Tj= 125
C
I-II-III
MIN
0.2
V
tgt
V
D
=V
DRM
I
G
= 500mA
dl
G
/dt= 3A
s
Tj= 25
C
I-II-III
TYP
2
s
I
H
*
I
T
= 250mA
Gate open
Tj= 25
C
MAX
35
50
V
TM
*
I
TM
= 22.5A tp= 380
s
Tj= 25
C
MAX
1.5
V
I
DRM
I
RRM
VDRM rated
V
RRM
rated
Tj= 25
C
MAX
10
A
Tj= 125
C
MAX
2
mA
dV/dt *
Linear slope up to
V
D
=67%V
DRM
Gate open
Tj= 125
C
MIN
200
300
V/
s
(dV/dt)c *
(dI/dt)c = 9 A/ms
(see note)
Tj= 125
C
MIN
10
20
V/
s
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note : In usual applications where (dI/dt)c is below 9 A/ms, the (dV/dt)c is always lower than 10V/
s, and, therefore, it is unnecessary to use a
snuber R-C network accross T1620W / T1630W triacs.
ELECTRICAL CHARACTERISTICS
T1620W / 1630W
2/5
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16
0
5
10
15
20
25
180
O
= 180
o
= 120
o
= 90
o
= 60
o
= 30
o
T(RMS)
I
(A)
P(W)
Fig.1 : Maximum power dissipation versus RMS
on-state current.
0
10 20 30 40 50 60 70 80 90 100 110 120 130
0
5
10
15
20
= 180
o
Tcase ( C)
o
I
(A)
T(RMS)
Fig.3 : RMS on-state current versus case tempera-
ture.
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Igt
Tj( C)
o
Ih
-40
-20
0
20
40
60
80
100
120 140
Igt[Tj]
Igt[Tj=25 C]
o
Ih[Tj]
Ih[Tj=25 C]
o
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
0
20
40
60
80
100
120
140
0
5
10
15
20
25
-60
-70
-80
-90
-100
-110
-120
P (W)
Tcase ( C)
o
Tamb ( C)
o
Rth = 0 C/W
1 C/W
2 C/W
4 C/W
o
o
o
o
Fig.2 : Correlation between maximum power dissi-
pation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
1E-3
1E-2
1E-1
1E +0
1E +1
1 E+2 5 E +2
0.01
0.1
1
Zth/Rth
Zth (j-c)
Zt h( j-a )
tp (s )
Fig.4 : Thermal transient impedance junction to
case and junction to ambient versus pulse dura-
tion.
1
10
100
1000
0
50
100
150
200
Tj initial = 25 C
o
Number of cycles
I
(A)
TSM
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
T1620W / 1630W
3/5
I
(A). I
2
t (A
2
s)
TSM
1
10
10
100
1000
Tj initial = 25 C
o
ITSM
tp(ms)
I
2
t
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp
10ms, and
corresponding value of I
2
t.
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
1
10
100
1000
I
(A)
TM
Tj in itial
25 C
o
Tj max
Tj max
Vto =0.9V
Rt =0.02 4
V
(V)
TM
Fig.8 : On-state characteristics (maximum values).
T1620W / 1630W
4/5
PACKAGE MECHANICAL DATA
ISOWATT220AB
Cooling method : C
Marking : Type number
Weight : 2.1g
Recommended torque value : 0.55 m.N.
Maximum torque value : 0.70 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
10
10.4
0.393
0.409
B
15.9
16.4
0.626
0.645
B1
9.8
10.6
0.385
0.417
C
28.6
30.6
1.126
1.204
D
16 typ
0.630 typ
E
9
9.3
0.354
0.366
H
4.4
4.6
0.173
0.181
I
3
3.2
0.118
0.126
J
2.5
2.7
0.098
0.106
L
0.4
0.7
0.015
0.027
M
2.5
2.75
0.098
0.108
N
4.95
5.2
0.195
0.204
N1
2.4
2.7
0.094
0.106
O
1.15
1.7
0.045
0.067
P
0.75
1
0.030
0.039
T1620W / 1630W
5/5