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T2550H-600T
SNUBBERLESSTM HIGH TEMPERATURE
25A TRIAC
S
April 2002 - Ed: 5A
MAIN FEATURES:
DESCRIPTION
Specifically designed for use in high temperature
environment (found in hot appliances such as
cookers, ovens, hobs, electric heaters, coffee
machines...), the new 25 Amps T25500H triacs
provide an enhanced performance in terms of
power loss and thermal dissipation. This allows
optimization of the heatsinking dimensioning,
leading to space and cost effectivness when
compared to electro-mechnical solutions.
Based on ST snubberless technology, they offer
high commutation switching capabilities and high
noise immunity levels. And, thanks to their clip
assembly technique, they provide a superior
performance in surge current handling.
Symbol
Value
Unit
I
T(RMS)
25
A
V
DRM
/V
RRM
600
V
I
GT (Q
1
)
50
mA
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
Tc = 125C
25
A
I
TSM
Non repetitive surge peak on-state current
(full cycle, Tj initial = 25C)
F = 60 Hz
t = 16.7 ms
260
A
F = 50 Hz
t = 20 ms
250
I
t
I
t Value for fusing
tp = 10 ms
340
A
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
100 ns
F = 120 Hz
Tj = 150C
50
A/s
V
DSM
/V
RSM
Non repetitive surge peak off-state voltage
tp = 10 ms
Tj = 25C
700
V
I
GM
Peak gate current
tp = 20 s
Tj = 150C
4
A
P
G(AV)
Average gate power dissipation
Tj = 150C
1
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 150
C
TO-220AB
T2550H-600T
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ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
STATIC CHARACTERISTICS
Note 1: minimum IGT is guaranted at 10% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCE
PRODUCT SELECTOR
ORDERING INFORMATION
Symbol
Test Conditions
Quadrant
Value
Unit
I
GT
(1)
V
D
= 12 V
R
L
= 33
I - II - III
MAX.
50
mA
V
GT
I - II - III
MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
Tj = 150C
I - II - III
MIN.
0.15
V
I
H
(2)
I
T
= 500 mA
MAX.
75
mA
I
L
I
G
= 1.2 I
GT
I - II - III
MAX.
90
mA
dV/dt (2)
V
D
= 67 % V
DRM
gate open Tj = 150C
MIN.
500
V/s
(dI/dt)c (2) Without snubber
Tj = 150C
MIN.
11.1
A/ms
Symbol
Test Conditions
Value
Unit
V
TM
(2)
I
TM
= 35 A
tp = 380 s
Tj = 25C
MAX.
1.5
V
V
to
(2)
Threshold voltage
Tj = 150C
MAX.
0.80
V
R
d
(2)
Dynamic resistance
Tj = 150C
MAX.
19
m
I
DRM
I
RRM
V
DRM
= V
RRM
Tj = 25C
MAX.
5
A
Tj = 150C
8.5
mA
V
DRM
/ V
RRM
= 400 V
(at mains peak voltage)
Tj = 150C
5.5
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (AC)
0.8
C/W
Part Number
Voltage
Sensitivity
Type
Package
T2550H-600T
600 V
50 mA
Snubberless
TO-220AB
T2550H-600T
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OTHER INFORMATION
Part Number
Marking
Weight
Base
quantity
Packing
mode
T2550H-600T
T2550H600T
2.3 g
250
Bulk
T2550H-600TRG
T2550H600T
2.3 g
50
Tube
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
Fig. 2: RMS on-state current versus case
temperature (full cycle).
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
T2550H-600T
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Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6:
Non-repetitive surge
peak on-state
current
for
a
sinusoidal
pulse
with
width
tp < 10ms, and corresponding value of It.
Fig.
7:
On-state
characteristics
(maximum
values).
Fig. 8:
Relative variation of critical rate of
decrease
of
main
current
versus
junction
temperature (typical values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
Fig.
10:
Leakage
current
versus
junction
temperature for different values of blocking
voltage (typical values).
T2550H-600T
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Fig. 11: Acceptable repetitive peak off-state
voltage versus case-ambient thermal resistance.
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
15.20
15.90
0.598
0.625
a1
3.75
0.147
a2
13.00
14.00
0.511
0.551
B
10.00
10.40
0.393
0.409
b1
0.61
0.88
0.024
0.034
b2
1.23
1.32
0.048
0.051
C
4.40
4.60
0.173
0.181
c1
0.49
0.70
0.019
0.027
c2
2.40
2.72
0.094
0.107
e
2.40
2.70
0.094
0.106
F
6.20
6.60
0.244
0.259
I
3.75
3.85
0.147
0.151
I4
15.80
16.40
16.80
0.622
0.646
0.661
L
2.65
2.95
0.104
0.116
l2
1.14
1.70
0.044
0.066
l3
1.14
1.70
0.044
0.066
M
2.60
0.102
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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