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Электронный компонент: T405-700W

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T4 Series
SNUBBERLESSTM & LOGIC LEVEL
4A TRIAC
S
June 2003 - Ed: 5
MAIN FEATURES:
DESCRIPTION
Based on ST's Snubberless / Logic level technolo-
gy providing high commutation performances, the
T4 series is suitable for use on AC inductive loads.
They are recommended for applications using
universal motors, electrovalves.... such as kitchen
aid equipments, power tools, dishwashers,...
Available in a fully insulated package, the
T4...-...W version complies with UL standards (ref.
E81734).
Symbol
Value
Unit
I
T(RMS)
4
A
V
DRM
/V
RRM
600 to 800
V
I
GTT (Q
1
)
5 to 35
mA
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
DPAK / IPAK
TO-220AB
Tc = 110C
4
A
ISOWATT 220AB
Tc = 105C
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25C)
F = 50 Hz
t = 20 ms
30
A
F = 60 Hz
t = 16.7 ms
31
I
t
I
t Value for fusing
tp = 10 ms
5.1
A
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
100 ns
F = 120 Hz
Tj = 125C
50
A/s
I
GM
Peak gate current
tp = 20 s
Tj = 125C
4
A
P
G(AV)
Average gate power dissipation
Tj = 125C
1
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
C
G
A2
A1
G
A2
A2
A1
DPAK
(T4-B)
A1
A2
G
ISOWATT 220AB
(T4-W)
A2
A2
A1
G
A2
A2
A1
G
TO-220AB
(T4-T)
IPAK
(T4-H)
T4 Series
2/8
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
STATIC CHARACTERISTICS
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
S = Copper surface under tab
Symbol
Test Conditions
Quadrant
T4
Unit
T405
T410
T435
I
GT
(1)
V
D
= 12 V R
L
= 30
I - II - III
MAX.
5
10
35
mA
V
GT
I - II - III
MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 33 k
Tj = 125C
I - II - III
MIN.
0.2
V
I
H
(2)
I
T
= 100 mA
MAX.
10
15
35
mA
I
L
I
G
= 1.2 I
GT
I - III
MAX.
10
25
50
mA
II
15
30
60
dV/dt (2)
V
D
= 67 %V
DRM
gate open Tj = 125C
MIN.
20
40
400
V/s
(dI/dt)c (2)
(dV/dt)c = 0.1 V/s Tj = 125C
MIN.
1.8
2.7
-
A/ms
(dV/dt)c = 10 V/s Tj = 125C
0.9
2.0
-
Without snubber
Tj = 125C
-
-
2.5
Symbol
Test Conditions
Value
Unit
V
TM
(2)
I
TM
= 5.5 A tp = 380 s
Tj = 25C
MAX.
1.6
V
V
to
(2)
Threshold voltage
Tj = 125C
MAX.
0.9
V
R
d
(2)
Dynamic resistance
Tj = 125C
MAX.
120
m
I
DRM
I
RRM
V
DRM
= V
RRM
Tj = 25C
MAX.
5
A
Tj = 125C
1
mA
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (AC)
DPAK
IPAK
TO-220AB
2.6
C/W
ISOWATT220AB
4.0
R
th(j-a)
Junction to ambient
S = 0.5 cm
DPAK
70
C/W
TO-220AB
ISOWATT220AB
60
IPAK
100
T
T4 Series
3/8
PRODUCT SELECTOR
ORDERING INFORMATION
OTHER INFORMATION
Note: xx = sensitivity, yyy = voltage
Part Number
Voltage (xxx)
Sensitivity
Type
Package
600 V
700 V
800 V
T405-xxxB
X
X
X
5 mA
Logic level
DPAK
T405-xxxH
X
X
X
5 mA
Logic level
IPAK
T405-xxxT
X
X
X
5 mA
Logic level
TO-220AB
T405-xxxW
X
X
X
5 mA
Logic level
ISOWATT220AB
T410-xxxB
X
X
X
10 mA
Logic level
DPAK
T410-xxxH
X
X
X
10 mA
Logic level
IPAK
T410-xxxT
X
X
X
10 mA
Logic level
TO-220AB
T410-xxxW
X
X
X
10 mA
Logic level
ISOWATT220AB
T435-xxxB
X
X
X
35 mA
Snubberless
DPAK
T435-xxxH
X
X
X
35 mA
Snubberless
IPAK
T435-xxxT
X
X
X
35 mA
Snubberless
TO-220AB
T435-xxxW
X
X
X
35 mA
Snubberless
ISOWATT220AB
Part Number
Marking
Weight
Base
quantity
Packing
mode
T4xx-yyyB
T4xxyyyB
0.3 g
75
Tube
T4xx-yyyB-TR
T4xxyyyB
0.3 g
2500
Tape & reel
T4xx-yyyH
T4xxyyy
0.4 g
75
Tube
T4xx-yyyT
T4xxyyyT
2.3 g
50
Tube
T4xx-yyyW
T4xxyyyW
2.1 g
50
Tube
T 4 05 - 600 B (-TR)
TRIAC
SERIES
SENSITIVITY:
05: 05mA
10: 10mA
35: 35mA
VOLTAGE:
600: 600V
700: 700V
800: 800V
CURRENT: 4A
PACKAGE:
B: DPAK
H: IPAK
T: TO-220AB
W: ISOWATT220AB
PACKING MODE:
Blank: Tube
-TR: DPAK Tape & Reel
T4 Series
4/8
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
Fig. 2-1: RMS on-state current case versus tem-
perature (full cycle).
Fig. 2-2: RMS on-state current versus ambient
temperature (printed circuit FR4, copper thick-
ness: 35m),full cycle.
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5: Surge peak on-state current versus
number of cycles.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
6
P(W)
IT(RMS)(A)
0
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Tc(C)
IT(RMS)(A)
TO-220AB/DPAK/IPAK
ISOWATT220AB
0
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tamb(C)
IT(RMS)(A)
DPAK
(S=0.5cm)
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
1E-2
1E-1
1E+0
K=[Zth/Rth]
Rth(j-c)
Rth(j-a)
TO-220AB/DPAK/IPAK
ISOWATT220AB
DPAK/IPAK
TO-220AB/ISOWATT220AB
tp(s)
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25C]
IGT
IH & IL
Tj(C)
1
10
100
1000
0
5
10
15
20
25
30
35
ITSM(A)
Non repetitive
Tj initial=25C
Repetitive
Tc=110C
One cycle
t=20ms
Number of cycles
T4 Series
5/8
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of It.
Fig. 7: On-state characteristics (maximum
values).
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
Fig. 10: DPAK thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35m).
0.01
0.10
1.00
10.00
1
10
100
500
tp (ms)
ITSM (A), It (As)
Tj initial=25C
ITSM
It
dI/dt limitation:
50A/s
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.1
1.0
10.0
30.0
ITM(A)
Tj max.:
Vto= 0.90 V
Rd= 120 m
Tj=Tj max.
VTM(V)
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
T435
T410
T405
(dV/dt)c (V/s)
0
25
50
75
100
125
0
1
2
3
4
5
6
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
Tj(C)
0
4
8
12
16
20
24
28
32
36
40
0
10
20
30
40
50
60
70
80
90
100
Rth(j-a) (C/W)
DPAK
S(cm)