TBA820M
1.2W AUDIO AMPLIFIER
DESCRIPTION
The TBA820M is a monolithic integrated audio
amplifier in a 8 lead dual in-line plastic package. It
is intended for use as low frequency class B power
amplifier with wide range of supply voltage: 3 to
16V, in portable radios, cassette recorders and
players etc. Main features are: minimum working
supply voltage of 3V, low quiescent current, low
number of external components, good ripple rejec-
tion, no cross-over distortion, low power dissipa-
tion.
Output power: P
o
= 2W at 12V/8
, 1.6W at 9V/4
and 1.2W at 9V/8
.
June 1988
Minidip
ORDERING NUMBER: TBA820M
Symbol
Parameter
Value
Unit
V
s
Supply voltage
16
V
I
o
Output peak current
1.5
A
P
tot
Power dissipation at T
amb
= 50
C
1
W
T
stg
, T
j
Storage and junction temperature
-40 to 150
C
ABSOLUTE MAXIMUM RATINGS
TEST AND APPLICATION CIRCUITS
Figure 1. Circuit diagram with load connected to the
supply voltage
Figure 2. Circuit diagram with load connected
to ground
* Capacitor C6 must be used when high rip-
ple
rejection is requested.
1/6
Symbol
Parameter
Value
Unit
R
th-j-amb
Thermal resistance junction-ambient
max
100
C/W
THERMAL DATA
2/6
PIN CONNECTION (top view)
SCHEMATIC DIAGRAM
TBA820M
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
s
Supply voltage
3
16
V
V
o
Quiescent output voltage (pin 5)
4
4.5
5
V
I
d
Quiescent drain current
4
12
mA
I
b
Bias current (pin 3)
0.1
A
P
o
Output power
d = 10%
R
f
= 120
V
s
= 12V
V
s
= 9V
V
s
= 9V
V
s
= 6V
V
s
= 3.5V
f = 1 kHz
R
L
= 8
R
L
= 4
R
L
= 8
R
L
= 4
R
L
= 4
0.9
2
1.6
1.2
0.75
0.25
W
W
W
W
W
Ri
Input resistance (pin 3)
f = 1 kHz
5
M
B
Frequency response (-3 dB)
R
L
= 8
C
5
= 1000
F
R
f
= 120
C
B
= 680 pF
25 to 7,000
Hz
C
B
= 220 pF
25 to 20,000
d
Distortion
P
o
= 500 mW
R
L
= 8
f = 1 kHz
R
f
= 33
0.8
%
R
f
= 120
0.4
G
v
Voltage gain (open loop)
f = 1 kHz
R
L
= 8
75
dB
G
v
Voltage gain (closed loop)
R
L
= 8
R
f
= 33
45
dB
f = 1 kHz
R
f
= 120
34
e
N
Input noise voltage (*)
3
V
i
N
Input noise current (*)
0.4
nA
S
+
N
N
Signal to noise ratio (*)
P
o
= 1.2W
R
L
= 8
G
v
= 34 dB
R1 = 10K
80
dB
R1 = 50 k
70
SVR
Supply voltage rejection
(test circuit of fig. 2)
R
L
= 8
f
(ripple)
= 100 Hz
C6 = 47
F
R
f
= 120
42
dB
ELECTRICAL CHARACTERISTICS
(Refer to the test circuits Vs = 9V, T
amb
= 25
C unless otherwise
specified)
(*) B = 22 Hz to 22 KHz
3/6
TBA820M
4/6
Figure 3. Output power vs.
supply voltage
Figure 4. Harmonic distortion
vs. output power
Figure 5. Power dissipation
and ef ficiency vs. output
power
Figure 6. Maximum power
d i ss i p at i on
(s i ne
wa ve
operation)
Figure 7. Suggested value of
C
B
vs. R
f
Figur e 8. Frequ ency res-
ponse
Figure 9. Harmonic distortion
vs. frequency
Figure 10. Supply voltage
rejection (Fig. 2 circuit)
Figure 11. Quiescent current
vs. supply voltage
TBA820M
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
3.32
0.131
a1
0.51
0.020
B
1.15
1.65
0.045
0.065
b
0.356
0.55
0.014
0.022
b1
0.204
0.304
0.008
0.012
D
10.92
0.430
E
7.95
9.75
0.313
0.384
e
2.54
0.100
e3
7.62
0.300
e4
7.62
0.300
F
6.6
0.260
I
5.08
0.200
L
3.18
3.81
0.125
0.150
Z
1.52
0.060
MINIDIP PACKAGE MECHANICAL DATA
5/6
TBA820M
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