TD300
15V TRIPLE IGBT/MOS DRIVER
June 1998
N
DIP14
(Plastic Package)
.
THREE POWER IGBT/MOS OR PULSE
TRANSFORMER DRIVERS
.
CURRENT SENSE COMPARATOR WITH
1ms INHIBITION TIME FUNCTION
.
INSTANTANEOUS SIGNAL TRANSMISSION
.
0.6 Amp PER CHANNEL PEAK OUTPUT
CURRENT CAPABILITY
.
LOW OUTPUT IMPEDANCE TYP : 7
at
200mA
.
CMOS/LSTTL COMPATIBLE INVERTING IN-
PUT WITH HYSTERESIS
.
13V TO 16V SINGLE SUPPLY OPERATION
.
UNDER VOLTAGE LOCKOUT (12.5V)
.
CURRENT AMPLIFIER
.
LOW BIAS CURRENT TYP : 1.5mA
.
DURING POWER UP NO RANDOM OUTPUT
STATE
.
ENHANCED LATCH-UP IMMUNITY
.
CHANNEL PARALLELING CAPABILITY
DESCRIPTION
The TD300 is designed to drive one, two or three
Power IGBT/MOS and has driving capability for
pulse transformer. So it is perfectly suited to inter-
face control IC with Power Switches in low side or
half-bridge configuration.
The typical application shown figure 1 implements
the TD300 in a pulse controlled half-bridge drive.
Positive and negative pulses are applied to the
pulse transformer to charge and discharge the
IGBT/MOS gate capacitance. More sophisticated
secondary circuits provide low impedance gate
drive and short-circuit protection as shown in appli-
cation note AN461.
On Figure 2, TD300 is implemented as a low side
driver in a typical 3 phase motor drive.
Figure 3 presents a general purpose low side gate
drive.
In both case, the current amplifier provides inter-
facing between a sense resistor and an A/D
converter.
D
SO14
(Plastic Micropackage)
Input A
CC
V +
Output C
1
2
3
4
8
5
6
7
9
10
11
12
13
14
OA input
N.C.
Output B
Output A
GND
Sense input
OA Output
Input B
Input C
Enable
Alarm
PIN CONNECTIONS
ORDER CODES
Part Number
Temperature
Range
Package
N
D
TD300I
-40
o
C, +105
o
C
1/8
4 - Input C
7 - Current
Output
6 - Alarm
5 - Enable
3 - Input B
2 - Input A
15V
Control Unit
tsi
tAI
11 - Output C
9 - Sense input
12 - Output B
13 - Output A
V
CC
GND
12.5V
8 - Current Input
1
10
0V
0V
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
18
V
V
i
Input Voltage
0 to V
CC
V
V
is
Sense Input Voltage
-0.3 to V
CC
V
T
j
Operating Junction Temperature
-40 to 150
o
C
T
amb
Operating Ambient Temperature
-40 to 105
o
C
T
stg
Storage Temperature Range
-65 to 150
o
C
OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
13 to 16
V
INSTRUCTIONS FOR USE
1 -
The TD300 supply voltage must be decoupled with a 1
F min. capacitor.
2 -
If the application involving TD300 requires maximum output current capability,
this current must be pulsed : pulse width 1
sec, duty cycle 1% at T
amb
.
TD300
2/8
ELECTRICAL CHARACTERISTICS
V
CC
= 15V, T
amb
= 25
o
C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Unit
I
CC
Supply Current with Inputs in High State
1.5
2
mA
LOGIC INPUT (all inputs)
V
IH
High Input Voltage
2
V
V
IL
Low Input Voltage
0.8
V
I
IH
High Input Current
10
pA
I
IL
Low Input Current
10
pA
t
dH,
t
eL
t
dL,
t
eH
Propagation Delay (10% input to 10% output)
Output Delay
Output Delay
T
min.
T
amb
T
max.
200
60
400
400
ns
t
Ii
Input Inhibiting Time
100
ns
t
dd
Differential Delay Time Between Channels
20
ns
OUTPUT DRIVERS
V
sod
Sourcing Drop Voltage (A/B/C outputs)
I
source
= 200mA
3
V
V
sid
Sinking Drop Voltage (A/B/C outputs)
I
sink
= 200mA
5
V
V
dem
Demagnetising Drop Voltage (A/B/C outputs)
I
demag.
= 100mA
2
V
R
opd
Output Pull Down Resistor
47
k
UNDERVOLTAGE LOCKOUT
V
hys
Threshold Hysteresis
0.8
V
V
st
Internal Start Threshold
11.7
13.3
V
ALARM OUTPUT
I
s
Low Level Sinking Current
V
O
= 0.8V
5
35
mA
I
sh
High Level Sinking Current
500
nA
t
A
Alarm Output : Delay Time to Alarm Fall if Sense Input Triggered
500
ns
SENSE INPUT
V
ios
Input Offset Voltage
20
mV
t
Ai
Inhibition Time if Sense Input Triggered
1
ms
t
s
Delay Time to Output Fall if Sense Input Triggered
All outputs inhibited
600
ns
t
si
Inhibition Time of Sense Input
300
ns
V
shys
Sense Hysteresis
40
mV
OPERATIONAL AMPLIFIER
V
icm
Common Mode Input Voltage Range
0 to V
CC
+
- 1.5
V
V
io
Input Offset Voltage
10
mV
I
io
Input Offset Current
1
pA
I
o
Output Short Circuit Current (V
id
= 100mV, V
o
= 0V)
60
mA
V
OL
Low Level Output Voltage (V
id
= -100mV)
20
mV
V
OH
High Level Output Voltage (V
id
= 100mV, R
L
= 100k
)
8.9
V
GBP
Gain Bandwidth Product
1
MHz
A
vd
Open Loop Gain
60
dB
SR
Slew Rate at Unity Gain (R
L
= 100k
, C
L
= 100pF, V
i
= 3 to 7V)
0.6
V/
s
TD300
3/8
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