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Электронный компонент: TDA8177

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TDA8177
VERTICAL DEFLECTION BOOSTER
December 1998
POWER
AMPLIFIER
4
5
7
THERMAL
PROTECTION
1
2
3
6
FLYBACK
GENERATOR
INVERTING INPUT
NON-INVERTING INPUT
OUTPUT
GROUND
SUPPLY
VOLTAGE
OUTPUT
STAGE
SUPPLY
FLYBACK
GENERATOR
TDA8177
8
1
7
7
-0
2
.
EPS
BLOCK DIAGRAM
7
6
5
4
3
2
1
Tab connected to Pin 4
OUTPUT STAGE SUPPLY
OUTPUT
GROUND
FLYBACK GENERATOR
SUPPLY VOLTAGE
INVERTING INPUT
NON-INVERTING INPUT
8
1
7
7
-0
1
.
EP
S
PIN CONNECTIONS
.
POWER AMPLIFIER
.
FLYBACK GENERATOR
.
THERMAL PROTECTION
.
OUTPUT CURRENT UP TO 3.0A
PP
.
FLYBACK VOLTAGE UP TO 70V (on Pin 5)
.
SUITABLE FOR DC COUPLING APPLICATION
DESCRIPTION
Designed for monitors and high performance TVs,
the TDA8177 vertical deflection booster delivers
flyback voltages up to 70V.
The TDA8177 operates with supplies up to 35V and
provides up to 3A
PP
output current to drive the yoke.
The TDA8177 is offered in HEPTAWATT package.
HEPTAWATT
(Plastic Package)
ORDER CODE : TDA8177
1/5
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
S
Supply Voltage (Pin 2) (see note 1)
40
V
V
6
Flyback Peak Voltage (Pin 6) (see note 1)
75
V
V
1
, V
7
Amplifier Input Voltage (Pins 1-7) (see note 1)
- 0.3, + V
S
V
I
O
Maximum Output Peak Current (see notes 2 and 3)
2.5
A
I
3
Maximum Sink Current (first part of flyback) (t < 1ms)
2.5
A
I
3
Maximum Source Current (t < 1ms)
2.5
A
V
ESD
Electrostatic Handling for all pins (see note 4)
2000
V
T
oper
Operating Ambient Temperature
- 20, + 75
o
C
T
stg
Storage Temperature
- 40, + 150
o
C
T
j
Junction Temperature
+150
o
C
Notes : 1. Versus Pin 4.
2. The output current can reach 4A peak for t
10
s (up to 120Hz).
3. Provided SOAR is respected (see Figures 1 and 2).
4. Equivalent to discharging a 100pF capacitor through a 1.5k
series resistor.
81
77
-
0
1
.
T
B
L
THERMAL DATA
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction-case Thermal Resistance
Max.
3
o
C/W
T
t
Temperature for Thermal Shutdown
150
o
C
T
jr
Recommended Max. Junction Temperature
120
o
C
81
77-
02
.
T
B
L
ELECTRICAL CHARACTERISTICS
(V
S
= 35V, T
A
= 25
o
C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
S
Operating Supply Voltage Range
10
35
V
I
2
Pin 2 Quiescent Current
I
3
= 0, I
5
= 0
9
20
mA
I
6
Pin 6 Quiescent Current
I
3
= 0, I
5
= 0, V
6
= 35V
8
15
30
mA
I
O
Max. Peak Output Current
1.5
A
I
1
Amplifier Bias Current
V
1
= 22V, V
7
= 23V
- 0.15
- 1
A
I
7
Amplifier Bias Current
V
1
= 23V, V
7
= 22V
- 0.15
- 1
A
V
IO
Offset Voltage
7
mV
V
IO
/dt
Offset Drift versus Temperature
- 10
V/
o
C
GV
Voltage Gain
80
dB
V
5L
Output Saturation Voltage to GND (Pin 4)
I
5
= 1.5A
1
1.7
V
V
5H
Output Saturation Voltage to Supply (Pin 6)
I
5
= - 1.5A
1.8
2.3
V
V
D5 - 6
Diode Forward Voltage between Pins 5-6
I
5
= 1.5A
1.8
2.3
V
V
D3 - 2
Diode Forward Voltage between Pins 3-2
I
3
= 1.5A
1.6
2.2
V
V
3SL
Saturation Voltage on Pin 3
I
3
= 20mA
0.4
1
V
V
3SH
Saturation Voltage to Pin 2 (2nd part of flyback)
I
3
= - 1.5A
2.1
2.8
V
81
77-
03
.
T
B
L
TDA8177
2/5
YOKE
1
3
4
5
6
7
1.
5
W
330
W
R5
R3
R2
R4
R1
0.
47
m
F
C
L
2
FLYBACK
GENERATOR
POWER
AMPLIFIER
THERMAL
PROTECTION
+ V
S
C
F
V
REF
2.2V
TDA8177
8
1
7
7
-0
3
.
EPS
APPLICATION CIRCUITS
AC COUPLING
YOKE
1
3
4
5
6
7
1.
5
W
330
W
R5
R2
R1
0.
47
m
F
2
FLYBACK
GENERATOR
POWER
AMPLIFIER
THERMAL
PROTECTION
+ V
S
C
F
TDA8177
Vertical
Position
Adjustment
V
REF
+
V
REF
-
-V
EE
8
1
7
7
-0
4
.
EPS
DC COUPLING
TDA8177
3/5
t = 1ms
t = 10ms
t = 100ms
I
C
(A)
10
1
10
-1
10
-2
1
10
10
2
V
CE
(V)
@ T
case
= 25C
8
1
7
7
-0
5
.
EP
S
Figure 1 : Output Transistors SOA
(for secondary breakdown)
100
90
80
70
60
25
50
75
100
125
ISB (%)
T
case
(C)
81
77
-
0
6.
E
P
S
Figure 2 : Secondary Breakdown Temperature
Derating Curve
(ISB = secondary breakdown current)
TDA8177
4/5
P
M
-
H
EPT
V.
E
P
S
PACKAGE MECHANICAL DATA : HEPTAWATT
Dimensions
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.8
0.189
C
1.37
0.054
D
2.4
2.8
0.094
0.110
D1
1.2
1.35
0.047
0.053
E
0.35
0.55
0.014
0.022
F
0.6
08
0.024
0.031
F1
0.9
0.035
G
2.41
2.54
2.67
0.095
0.100
0.105
G1
4.91
5.08
5.21
0.193
0.200
0.205
G2
7.49
7.62
7.8
0.295
0.300
0.307
H2
10.4
0.409
H3
10.05
10.4
0.396
0.409
L
16.97
0.668
L1
14.92
0.587
L2
21.54
0.848
L3
22.62
0.891
L5
2.6
3
0.102
0.118
L6
15.1
15.8
0.594
0.622
L7
6
6.6
0.236
0.260
M
2.8
0.110
M1
5.08
0.200
Dia.
3.65
3.85
0.144
0.152
H
EPT
V.
T
B
L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No licence is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1998 STMicroelectronics - All Rights Reserved
Purchase of I
2
C Components of STMicroelectronics, conveys a license under the Philips I
2
C Patent.
Rights to use these components in a I
2
C system, is granted provided that the system conforms to
the I
2
C Standard Specifications as defined by Philips.
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TDA8177
5/5