TXDV 412 ---> 812
March 1995
ALTERNISTORS
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360
conduction angle)
Tc = 90
C
12
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
C )
tp = 2.5 ms
170
A
tp = 8.3 ms
125
tp = 10 ms
120
I2t
I2t value
tp = 10 ms
72
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/
s
Repetitive
F = 50 Hz
20
A/
s
Non
Repetitive
100
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
C
C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
C
TO220AB
(Plastic)
A1
A2
G
.
VERY HIGH COMMUTATION : > 42.5 A/ms
(400Hz)
.
INSULATING VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
.
dV/dt : 500 V/
s min
DESCRIPTION
Symbol
Parameter
TXDV
Unit
412
612
812
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
C
400
600
800
V
ABSOLUTE RATINGS (limiting values)
FEATURES
The TXDV 412 ---> 812 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
1/5
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
C/W
Rth (j-c) DC Junction to case for DC
2.5
C/W
Rth (j-c) AC Junction to case for 360
conduction angle ( F= 50 Hz)
1.9
C/W
Symbol
Test Conditions
Quadrant
Value
Unit
IGT
VD=12V (DC) RL=33
Tj=25
C
I-II-III
MAX
100
mA
VGT
VD=12V (DC) RL=33
Tj=25
C
I-II-III
MAX
1.5
V
VGD
VD=VDRM RL=3.3k
Tj=110
C
I-II-III
MIN
0.2
V
tgt
VD=VDRM IG = 500mA
dIG/dt = 3A/
s
Tj=25
C
I-II-III
TYP
2.5
s
IL
IG=1.2 IGT
Tj=25
C
I-III
TYP
100
mA
II
200
IH *
IT= 500mA gate open
Tj=25
C
MAX
100
mA
VTM *
ITM= 17A tp= 380
s
Tj=25
C
MAX
1.95
V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25
C
MAX
0.01
mA
Tj=110
C
MAX
2
dV/dt *
Linear slope up to VD=67%VDRM
gate open
Tj=110
C
MIN
500
V/
s
(dI/dt)c *
(dV/dt)c = 200V/
s
Tj=110
C
MIN
10
A/ms
(dV/dt)c = 10V/
s
42.5
* For either polarity of electrode A
2
voltage with reference to electrode A
1
.
PG (AV) = 1W PGM = 10W (tp = 20
s) IGM = 4A (tp = 20
s) VGM = 16V (tp = 20
s).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TXDV 412 ---> 812
2/5
375
0
1
2
3
4
5
6
7
8
9
10 11
12
0
2
4
6
8
10
12
14
16
18
20
180
O
= 180
o
= 120
o
= 90
o
= 60
o
= 30
o
T(RMS)
I
(A)
P(W)
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
0
20
40
60
80
100
120
140
0
2
4
6
8
10
12
14
16
18
20
-90
-95
-100
-105
-110
-115
-120
-125
P (W)
Tamb ( C)
o
Tcase ( C)
o
Rth = 0 C/W
1 C/W
2 C/W
4 C/W
o
o
o
o
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact.
0
10 20 30 40 50 60 70 80 90 100 110 120 130
0
2
4
6
8
10
12
14
= 180
o
Tcase( C)
o
I
(A)
T(RMS)
Fig.3 : RMS on-state current versus case temperature.
1E-3
1E-2
1E-1
1E+0
1E+1
1E +2 5E+2
0.01
0.1
1
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.4 : Relative variation of thermal impedance versus
pulse duration.
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non Repetitive surge peak on-state current
versus number of cycles.
TXDV 412 ---> 812
3/5
376
Fig.7 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t
10ms, and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum values).
Fig.9 : Safe operating area.
TXDV 412 ---> 812
4/5
377
PACKAGE MECHANICAL DATA
TO220AB Plastic
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
I
=
=
A
G
D
B
C
F
P
N
O
M
L
J
H
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
10.20
10.50
0.401
0.413
B
14.23
15.87
0.560
0.625
C
12.70
14.70
0.500
0.579
D
5.85
6.85
0.230
0.270
F
4.50
0.178
G
2.54
3.00
0.100
0.119
H
4.48
4.82
0.176
0.190
I
3.55
4.00
0.140
0.158
J
1.15
1.39
0.045
0.055
L
0.35
0.65
0.013
0.026
M
2.10
2.70
0.082
0.107
N
4.58
5.58
0.18
0.22
O
0.80
1.20
0.031
0.048
P
0.64
0.96
0.025
0.038
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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TXDV 412 ---> 812
5/5
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