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TN12, TS12 and TYNx12 Series
SENSITIVE & STANDARD
12A SCRs
September 2000 - Ed: 3
MAIN FEATURES:
DESCRIPTION
Available either in sensitive (TS12) or standard
(TYN, TN12...) gate triggering levels, the 12A SCR
series is suitable to fit all modes of control found in
applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, in-rush current limiting circuits,
capacitive discharge ignition, voltage regulation
circuits...
Available in though-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
Symbol
Value
Unit
I
T(RMS)
12
A
V
DRM
/V
RRM
600 to 1000
V
I
GT
0.2 to 15
mA
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (180 conduction angle)
Tc = 105C
12
A
IT
(AV)
Average on-state current (180 conduction angle)
Tc = 105C
8
A
DPAK /
IPAK
D
PAK /
TO-220AB
I
TSM
Non repetitive surge peak
on-state current
tp = 8.3 ms
Tj = 25C
115
146
A
tp = 10 ms
110
140
I
t
I
t Value for fusing
tp = 10 ms
Tj = 25C
60
98
A
S
dI/dt
Critical rate of rise of on-state
current I
G
= 2 x I
GT
, tr
100 ns
F = 60 Hz
Tj = 125C
50
A/s
I
GM
Peak gate current
tp = 20 s
Tj = 125C
4
A
P
G(AV)
Average gate power dissipation
Tj = 125C
1
W
T
stg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
C
V
RGM
Maximum peak reverse gate voltage (for TN12 & TYN)
5
V
G
A
K
A
A
K
G
DPAK
(TS12-B)
(TN12-B)
A
A
G
K
A
A
K
G
G
A
A
K
D
2
PAK
(TN12-G)
IPAK
(TS12-H)
(TN12-H)
TO-220AB
(TYN)
TN12, TS12 and TYNx12 Series
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ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
s
SENSITIVE
s
STANDARD
THERMAL RESISTANCES
S = Copper surface under tab
Symbol
Test Conditions
TS1220
Unit
I
GT
V
D
= 12 V R
L
= 140
MAX.
200
A
V
GT
MAX.
0.8
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
R
GK
= 1 k
Tj = 125C
MIN.
0.1
V
V
RG
I
RG
= 10
A
MIN.
8
V
I
H
I
T
= 50 mA R
GK
= 1 k
MAX.
5
mA
I
L
I
G
= 1 mA R
GK
= 1 k
MAX.
6
mA
dV/dt
V
D
= 67 % V
DRM
R
GK
= 220
Tj = 125C
MIN.
5
V/s
V
TM
I
TM
= 24 A tp = 380 s
Tj = 25C
MAX.
1.6
V
V
t0
Threshold voltage
Tj = 125C
MAX.
0.85
V
R
d
Dynamic resistance
Tj = 125C
MAX.
30
m
I
DRM
I
RRM
V
DRM
= V
RRM
R
GK
= 220
Tj = 25C
MAX.
5
A
Tj = 125C
2
mA
Symbol
Test Conditions
TN1215
TYN
Unit
B/H
G
x12T
x12
I
GT
V
D
= 12 V R
L
= 33
MIN.
2
0.5
2
mA
MAX.
15
5
15
V
GT
MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125C
MIN.
0.2
V
I
H
I
T
= 500 mA Gate open
MAX.
40
30
15
30
mA
I
L
I
G
= 1.2 I
GT
MAX.
80
60
30
60
mA
dV/dt
V
D
= 67 % V
DRM
Gate open
Tj = 125C
MIN.
200
40
200
V/s
V
TM
I
TM
= 24 A tp = 380 s
Tj = 25C
MAX.
1.6
V
V
t0
Threshold voltage
Tj = 125C
MAX.
0.85
V
R
d
Dynamic resistance
Tj = 125C
MAX.
30
m
I
DRM
I
RRM
V
DRM
= V
RRM
Tj = 25C
MAX.
5
A
Tj = 125C
2
mA
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (DC)
1.3
C/W
R
th(j-a)
Junction to ambient
TO-220AB
60
C/W
IPAK
100
S = 1 cm
D
PAK
45
S = 0.5 cm
DPAK
70
TN12, TS12 and TYNx12 Series
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PRODUCT SELECTOR
ORDERING INFORMATION
Part Number
Voltage (xxx)
Sensitivity
Package
600 V
700 V
800 V
1000 V
TN1215-xxxB
X
X
15 mA
DPAK
TN1215-xxxG
X
X
X
15 mA
D
PAK
TN1215-xxxH
X
X
15 mA
IPAK
TS1220-xxxB
X
X
0.2 mA
DPAK
TS1220-xxxH
X
X
0.2 mA
IPAK
TYNx12
X
X
X
30 mA
TO-220AB
TYNx12T
X
X
X
15 mA
TO-220AB
TN 12 15 - 600 B (-TR)
STANDARD
SCR
SERIES
CURRENT: 12A
SENSITIVITY:
15: 15mA
VOLTAGE:
600: 600V
800: 800V
1000: 1000V
PACKAGE:
B: DPAK
H: IPAK
G: D PAK
2
PACKING MODE:
Blank: Tube
-TR: D PAK & DPAK
Tape & Reel
2
TS 12 20 - 600 B (-TR)
SENSITIVE
SCR
SERIES
CURRENT: 12A
SENSITIVITY:
20: 200A
VOLTAGE:
600: 600V
700: 700V
PACKAGE:
B: DPAK
H: IPAK
PACKING MODE:
Blank: Tube
-TR: DPAK Tape & Reel
TYN 6 12
T
STANDARD
SCR
SERIES
CURRENT: 12A
SENSITIVITY:
Blank: 30mA
T: 15mA
VOLTAGE:
600: 600V
800: 800V
1000: 1000V
TN12, TS12 and TYNx12 Series
4/10
OTHER INFORMATION
Note: x = voltage
Part Number
Marking
Weight
Base Quantity
Packing mode
TN1215-x00B
TS1215x00
0.3 g
75
Tube
TN1215-x00B-TR
TS1215x00
0.3 g
2500
Tape & reel
TN1215-x00G
TS1215x00G
1.5 g
50
Tube
TN1215-x00G-TR
TS1215x00G
1.5 g
1000
Tape & reel
TN1215-x00H
TN1215x00
0.4 g
75
Tube
TS1220-x00B
TS1220x00
0.3 g
75
Tube
TS1220-x00B-TR
TS1220x00
0.3 g
2500
Tape & reel
TS1220-x00H
TS1220x00
0.4 g
75
Tube
TYNx12
TYNx12
2.3 g
250
Bulk
TYNx12RG
TYNx12
2.3 g
50
Tube
TYNx12T
TYNx12T
2.3 g
250
Bulk
TYNx12TRG
TYNx12T
2.3 g
50
Tube
Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2-1: Average and D.C. on-state current
versus case temperature.
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (DPAK and
D
2
PAK).
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration.
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
10
11
12
P(W)
= 180
IT(av)(A)
360
0
25
50
75
100
125
0
2
4
6
8
10
12
14
IT(av)(A)
DC
= 180
Tcase(C)
0
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
IT(av)(A)
= 180
DC
D
2
PAK
DPAK
Tamb(C)
1E-3
1E-2
1E-1
1E+0
0.1
0.2
0.5
1.0
K = [Zth(j-c)/Rth(j-c)]
tp(s)
TN12, TS12 and TYNx12 Series
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Fig. 3-2: Relative variation of thermal
impedance junction to ambient versus pulse
duration (recommended pad layout, FR4 PC
board).
Fig. 4-1: Relative variation of gate trigger
current, holding current and latching versus
junction temperature for TS12 series.
Fig. 4-2: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature for TN12 & TYN
series.
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values)
for TS12 series.
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values)
for TS12 series.
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values)
for TS12 series.
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.01
0.10
1.00
K = [Zth(j-a)/Rth(j-a)]
DPAK
TO-220AB
D
2
PAK
tp(s)
-40
-20
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 C]
IGT
IH & IL
Rgk = 1k
Tj(C)
-40
-20
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 C]
IGT
IH & IL
Tj(C)
1E-2
1E-1
1E+0
1E+1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IH[Rgk] / IH[Rgk = 1k
]
Tj = 25C
Rgk(k
)
dV/dt[Rgk] / dV/dt [Rgk = 220 ]
Rgk(k )
Tj = 125C
VD = 0.67 x VDRM
0.1
1.0
10.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VD = 0.67 x VDRM
Tj = 125C
Rgk = 220
dV/dt[Cgk] / dV/dt [Rgk = 220 ]
Cgk(nF)
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