VN03SP
HIGH SIDE SMART POWER SOLID STATE RELAY
July 1998
T YPE
V
DSS
R
DS(on)
I
n( *)
V
CC
VN03SP
60 V
0.5
0.7 A
26 V
s
MAXIMUM CONTINUOUS OUTPUT
CURRENT (#):9 A @ T
c
=85
o
C
s
5 V LOGIC LEVEL COMPATIBLE INPUT
s
THERMAL SHUT-DOWN
s
UNDER VOLTAGE PROTECTION
s
OPEN DRAIN DIAGNOSTIC OUTPUT
s
INDUCTIVE LOAD FAST
DEMAGNETIZATION
s
VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN03SP is a monolithic device made using
STMicroelectronics
VIPower
Technology,
intended for driving resistive or inductive loads
with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The open drain diagnostic output indicates: open
load in off state, and in on state, output shorted to
V
CC
and overtemperature. Fast demagnetization
of inductive loads is archivied by negative (-18V)
load voltage at turn-off.
1
10
PowerSO-10
TM
(*) In = Nominal current according to ISO definition for high side automotive switch (see note 1)
(#) The maximum continuous output current is the the current at T
c
= 85
o
C for a battery voltage of 13V which does not activate self
protection.
1/9
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient ($)
Max
4.5
50
o
C/W
o
C/W
($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS (V
CC
= 13 V; -40
T
j
125
o
C unless otherwise specified)
POWER
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
CC
Supply Voltage
5. 5
13
26
V
In(*)
Nominal Current
T
c
= 85
o
C
V
DS(on)
0.5 (note 1)
0. 7
A
R
on
On Stat e Resistance
I
OUT
= 0.7 A
I
OUT
= 0.7 A
T
j
= 25
o
C
1
0.5
I
S
Supply Current
Of f St ate
T
j
25
o
C
On Stat e
50
15
A
mA
V
DS(MAX)
Maximum Volt age Drop I
OUT
= 4 A
T
c
= 85
o
C
3.6
V
SWITCHING
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
d(on)
(^)
Turn-on Delay Time Of
Output Current
I
OUT
= 0.7 A Resist ive Load
Input Rise T ime < 0.1
s
15
s
t
r
(^)
Rise Time O f O utput
Current
I
OUT
= 0.7 A Resist ive Load
Input Rise T ime < 0.1
s
10
s
t
d(off )
(^)
Turn-off Delay Time O f
Output Current
I
OUT
= 0.7 A Resist ive Load
Input Rise T ime < 0.1
s
15
s
t
f
(^)
Fall T ime Of Output
Current
I
OUT
= 0.7 A Resist ive Load
Input Rise T ime < 0.1
s
4
s
(di/ dt)
on
Turn-on Current Slope
I
OUT
= 0.7 A
I
OUT
= I
OV
0. 05
0.5
1
A/
s
A/
s
(di/dt)
off
Turn-off Current Slope
I
OUT
= 0.7 A
I
OUT
= I
OV
0. 14
3
3
A/
s
A/
s
V
dem ag
Inductive Load Clamp
Voltage
I
OUT
= 0.7 A
L = 1 mH
-24
-18
-14
V
LOGIC INPUT
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
I L
Input Low Level
Voltage
0.8
V
V
I H
Input High Level
Voltage
2
(
)
V
V
I(hyst.)
Input Hysteresis
Voltage
0.5
V
I
IN
Input Current
V
I N
= 5 V
V
I N
= 2 V
V
I N
= 0.8 V
25
250
500
250
A
A
A
V
ICL
Input Clamp Voltage
I
IN
= 10 mA
I
IN
= -10 mA
5. 5
6
-0. 7
-0.3
V
V
VN03SP
3/9
ELECTRICAL CHARACTERISTICS(continued)
PROTECTION AND DIAGNOSTICS
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
STAT
St atus Voltage Out put
Low
I
STAT
= 1.6 mA
0.4
V
V
USD
Under Voltage Shut
Down
5
V
V
SCL
St atus Clamp Voltage
I
STAT
= 10 mA
I
STAT
= -10 mA
6
-0. 7
V
V
I
OV
Over Current
R
LOAD
< 10 m
-40 T
c
125
o
C
28
A
I
AV
Average Current in
Short Circuit
R
LOAD
< 10 m
T
c
= 85
o
C
0.9
A
I
OL
Open Load Current
Level
5
35
70
mA
T
TSD
Thermal Shut-down
Temperat ure
140
o
C
T
R
Reset Temperature
125
o
C
V
OL
Open Load Voltage
Level
Of f-St ate (note 2)
2. 5
3. 75
5
V
t
1(on)
Open Load Filtering
Time
(note 3)
1
5
10
ms
t
1(of f)
Open Load Filtering
Time
(note 3)
1
5
10
ms
t
2(of f)
Open Load Filtering
Time
(note 3)
1
5
10
ms
t
povl
St atus Delay
(note 3)
5
10
s
t
po l
St atus Delay
(note 3)
50
700
s
(^) See Switchig Time Waveforms
() The V
IH
is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
note 1:The Nominal Current is the current at T
c
= 85
o
C for battery voltage of 13V which produces a voltage drop of 0.5 V
note 2:I
OL (off)
= (V
CC
-V
OL
)/R
OL
(see figure)
note 3:t
1(on)
: minimum open load duration which acctivates the status output
t
1(off)
: minimum load recovery time which desactivates the status output
t
2(off)
: minimum on time after thermal shut down which desactivates status output
t
po vl
t
pol
: ISO definition (see figure)
Note 2 Relevant Figure
Note 3 Relevant Figure
VN03SP
4/9
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open load conditions in off state as well
as in on state, output shorted to V
CC
and
overtemperature. The truth table shows input,
diagnostic and
output
voltage level in normal
operation and in fault conditions.
The output
signals
are
processed by internal logic. The
open load diagnostic output has a 5 ms filtering.
The filter gives a continuous signal for the fault
condition after an initial delay of about 5 ms. This
means that
a
disconnection during normal
operation, with a duration of less than 5 ms does
not
affect the
status output.
Equally, any
re-connection of less than 5 ms during a
disconnection duration does not affect the status
output. No delay occur for the status to go low in
case of overtemperature conditions. From the
falling edge of the input signal the status output
initially low in fault condition (over temperature or
open load) will go back with a delay (t
povl
)in case
of overtemperature condition and a delay (t
pol
) in
case of open load. These feature fully comply
with
International
Standard
Office
(I.S.O.)
requirement for automotive High Side Driver.
To protect the device against short circuit and
over current conditions, the thermal protection
turns the integrated Power MOS off
at
a
minimum
junction
temperature
of 140
o
C.
When the temperature returns to 125
o
C the
switch is automatically turned on again. In short
circuit the protection reacts
with
virtually no
delay, the sensor being located in the region of
the die where the heat is generated. Driving
inductive loads,
an
internal function of the
device ensures the fast demagnetizationwith a
typical voltage (V
demag
) of -18V.
This function allows to greatly reduce the power
dissipation according to the formula:
P
dem
= 0.5
L
load
(I
load
)
2
[(V
CC
+V
demag
)/V
demag
]
f
where f = switching frequency and
V
demag
= demagnetization voltage
Based on this formula it is possible to know
the value of inductance and/or current to avoid
a thermal shut-down. The maximum inductance
which causes the chip temperature to reach the
shut down temperature in a specific thermal
environment, is infact a function of the load
current for a fixed V
CC
, V
demag
and f.
PROTECTING THE DEVICE AGAIST LOAD
DUMP - TEST PULSE 5
The device is able to withstand the test pulse
No. 5 at level II (V
s
= 46.5V) according to the
ISO T/R 7637/1
without
any
external
component. This means that all functions of the
device are
performed as
designed
after
exposure to disturbance at level II. The VN06SP
is able to withstand the test pulse No.5 at level
III adding an
external resistor of
150 ohm
between GND pin and ground plus a filter
capacitor of 1000
F between V
CC
pin and
ground (if R
LOAD
20
).
PROTECTING
THE
DEVICE
AGAINST
REVERSE
BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between GND pin and
ground, as shown in the typical application circuit
(fig.3).
The consequences of the voltage drop across
this diode are as follows:
If the input is pulled to power GND, a negative
voltage of -V
f
is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND).
The undervoltage shutdown level is increa-
sed
by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [6]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board avoiding shift of V
ih
, V
il
and V
stat
. This
solution allows the use of a standard diode.
Switching Time Waveforms
VN03SP
5/9
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