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PRODUCT PREVIEW
December 2004
STW29NK50ZD
N-CHANNEL 500 V - 0.11
- 29A TO-247
Fast Diode SuperMESHTM MOSFET
Table 1: General Features
s
TYPICAL R
DS
(on) = 0.11
s
HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
GATE CHARGE MINIMIZED
s
LOW INTRINSIC CAPACITANCES
s
VERY GOOD MANUFACTURING
REPEATIBILITY
s
FAST INTERNAL RECOVERY TIME
DESCRIPTION
The Fast SuperMeshTM series associates all ad-
vantages of reduced on-resistance, zener gate
protection and very goog dv/dt capability with a
Fast body-drain recovery diode. Such series com-
plements the "FDmeshTM" Advanced Technology.
APPLICATIONS
s
HID BALLAST
s
ZVS PHASE-SHIFT FULL BRIDGE
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
DSS
R
DS(on)
I
D
P
W
STW29NK50ZD
500 V
< 0.15
29 A
350 W
1
2
3
TO-247
PART NUMBER
MARKING
PACKAGE
PACKAGING
STW29NK50ZD
W29NK50ZD
TO-247
TUBE
Rev. 2
STW29NK50ZD
2/7
Table 3: Absolute Maximum ratings
(*) Pulse width limited by safe operating area
(1) I
SD
29 A, di/dt
200 A/s, VDD
V
(BR)DSS
, T
J
T
JMAX
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 K
)
500
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C 29
A
I
D
Drain Current (continuous) at T
C
= 100C
18.27
A
I
DM
(*)
Drain Current (pulsed)
116
A
P
TOT
Total Dissipation at T
C
= 25C
350
W
Derating Factor
2.77
W/C
V
ESD(G-S)
Gate source ESD (HBM-C = 100pF, R = 1.5 K
)
6000
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
T
stg
T
j
Storage Temperature
Operating Junction Temperature
-55 to 150
C
Rthj-case
Thermal Resistance Junction-case Max
0.36
C/W
Rthj-amb
T
l
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
50
300
C/W
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
29
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
500
mJ
Symbol
Parameter
Test Condition
Min.
Typ.
Max
Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=
1mA (Open Drain)
30
A
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STW29NK50ZD
TABLE 7: ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
On /Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source Breakdown
Voltage
I
D
= 1 mA, V
GS
= 0
500
S
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125C
1
50
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20 V
10
A
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 150 A
3
3.75
4.5
V
R
DS(on
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 14.5 A
0.11
0.15
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V, I
D
= 14.5 A
28
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
6000
570
155
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
V
DD
= 400 V, I
D
= 14.5 A,
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load see Figure 4))
TBD
TBD
TBD
TBD
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480 V, I
D
= 14.5 A,
V
GS
= 10 V
180
TBD
TBD
200
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
29
116
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 29 A, V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 29 A, di/dt = 100 A/s
V
DD
= 30V, T
j
= 25C
(see test circuit Figure 5)
TBD
TBD
TBD
ns
C
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 29 A, di/dt = 100 A/s
V
DD
= 30V, T
j
= 150C
(see test circuit Figure 5)
TBD
TBD
TBD
ns
C
A
STW29NK50ZD
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Figure 3: Unclamped Inductive Load Test Cir-
cuit
Figure 4: Switching Times Test Circuit For Re-
sistive Load
Figure 5: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 6: Unclamped Inductive Wafeform
Figure 7: Gate Charge Test Circuit
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STW29NK50ZD
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
b2
3.0
3.40
0.118
0.134
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
0.620
e
5.45
0.214
L
14.20
14.80
0.560
0.582
L1
3.70
4.30
0.14
0.17
L2
18.50
0.728
P
3.55
3.65
0.140
0.143
R
4.50
5.50
0.177
0.216
S
5.50
0.216
TO-247 MECHANICAL DATA
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