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X00602MA
SENSITIVE
0.8A SCRs
January 2002 - Ed: 5
MAIN FEATURES:
DESCRIPTION
Thanks to highly sensitive triggering levels, the
X006 SCR series is suitable for all applications
where the available gate current is limited, such as
ground fault circuit interrupters, overvoltage
crowbar protection in low power supplies,
capacitive ignition circuits, ...
Symbol
Value
Unit
I
T(RMS)
0.8
A
V
DRM
/V
RRM
600
V
I
GT
200
A
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (180 conduction angle)
Tl = 85C
0.8
A
IT
(AV)
Average on-state current (180 conduction angle)
Tl = 85C
0.5
A
I
TSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25C
10
A
tp = 10 ms
9
I
t
I
t Value for fusing
tp = 10ms
Tj = 25C
0.25
A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
100 ns
F = 60 Hz
Tj = 125C
50
A/s
I
GM
Peak gate current
tp = 20 s
Tj = 125C
1
A
P
G(AV)
Average gate power dissipation
Tj = 125C
0.1
W
T
stg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 125
- 40 to + 125
C
G
A
K
A
G
K
TO-92
X00602MA
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ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
THERMAL RESISTANCES
PRODUCT SELECTOR
ORDERING INFORMATION
OTHER INFORMATION
Symbol
Test Conditions
X00602MA
Unit
I
GT
V
D
= 12 V R
L
= 140
MIN.
15
A
MAX.
200
A
V
GT
MAX.
0.8
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
R
GK
= 1 k
Tj = 125C
MIN.
0.2
V
V
RG
I
RG
= 10
A
MIN.
5
V
I
H
I
T
= 50 mA R
GK
= 1 k
MAX.
5
mA
I
L
I
G
= 1 mA R
GK
= 1 k
MAX.
6
mA
dV/dt
V
D
= 67 % V
DRM
R
GK
= 1 k
Tj = 125C
MIN.
25
V/s
V
TM
I
TM
= 1 A tp = 380 s
Tj = 25C
MAX.
1.35
V
V
t0
Threshold voltage
Tj = 125C
MAX.
0.85
V
R
d
Dynamic resistance
Tj = 125C
MAX.
245
m
I
DRM
I
RRM
V
DRM
= V
RRM
R
GK
= 1 k
Tj = 25C
MAX.
1
A
Tj = 125C
100
Symbol
Parameter
Value
Unit
R
th(j-l)
Junction to lead (DC)
70
C/W
R
th(j-a)
Junction to ambient (DC)
150
C/W
Part Number
Voltage
Sensitivity
Package
X00602MA
600 V
200 A
TO-92
Part Number
Marking
Weight
Base Quantity
Packing mode
X00602MA 1AA2
X0602MA
0.2 g
2500
Bulk
X00602MA 2AL2
X0602MA
0.2 g
2000
Ammopack
X00602MA 5AL2
X0602MA
0.2 g
2000
Tape & reel
X 006 02 M A 1AA2
SENSITIVE
SCR
SERIES
CURRENT: 0.8A
SENSITIVITY:
02: 200A
VOLTAGE:
M: 600V
PACKAGE:
A: TO-92
Blank
PACKING MODE:
1AA2: Bulk
2AL2: Ammopack
5AL2: Tape & reel
X00602MA
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Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2-1: Average and D.C. on-state current
versus lead temperature.
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
P(W)
= 180
IT(av)(A)
360
0
25
50
75
100
125
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
IT(av)(A)
D.C.
= 180
Tlead(C)
0
25
50
75
100
125
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IT(av)(A)
= 180
D.C.
Tamb(C)
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.01
0.10
1.00
K = [Zth(j-a)/Rth(j-a)]
tp(s)
-40
-20
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25 C]
IH & IL
IGT
Tj(C)
IH[Rgk]/IH[Rgk=1k ]
Rgk(k )
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
1E-1
1E+0
1E+1
1E+2
X00602MA
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Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical
values).
Fig. 8: Surge peak on-state current versus
number of cycles.
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of It.
Fig. 10: On-state characteristics (maximum
values).
dV/dt[Rgk]/dV/dt[Rgk=1k ]
1E-2
1E+2
1E+1
1E+0
1E-1
1E-2
1E-1
1E+0
1E+1
Rgk(k )
dV/dt[Cgk]/dV/dt[Rgk=1k ]
Cgk(nF)
20
10
5
2
1
1
2
5
10
amb=25C
1
10
100
1000
0
1
2
3
4
5
6
7
8
9
10
ITSM(A)
Nonrepetitive
Tjinitial=25C
Repetitive
T
Number of cycles
Onecycle
tp=10ms
0.01
0.10
1.00
10.00
0.1
1.0
10.0
100.0
ITSM(A),I
2
t(A
2
s)
Tj initial = 25 C
ITSM
I
2
t
tp(ms)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1E-2
1E-1
1E+0
1E+1
ITM(A)
Tj max.:
Vto = 0.85V
Rd = 245m
Tj = Tjmax.
Tj = 25C
VTM(V)
X00602MA
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PACKAGE MECHANICAL DATA
TO-92 (Plastic)
D
F
a
E
B
A
C
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
1.35
0.053
B
4.70
0.185
C
2.54
0.100
D
4.40
0.173
E
12.70
0.500
F
3.70
0.146
a
0.50
0.019
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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