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Электронный компонент: X0203MA1BA2

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X02xxxA
January 1995
SENSITIVE GATE SCR
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(180
conduction angle)
Tl= 60
C
1.25
A
I
T(AV)
Mean on-state current
(180
conduction angle)
Tl= 60
C
0.8
A
I
TSM
Non repetitive surge peak on-state current
(T
j
initial = 25
C )
tp = 8.3 ms
25
A
tp = 10 ms
22.5
I
2
t
I
2
t Value for fusing
tp = 10 ms
2.5
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 10 mA
di
G
/dt = 0.1 A/
s.
30
A/
s
T
stg
T
j
Storage and operating junction temperature range
- 40, + 150
- 40, + 125
C
Tl
Maximum lead temperature for soldering during 10s at
2mm from case
260
C
ABSOLUTE RATINGS (limiting values)
TO92
(Plastic)
I
T(RMS)
= 1.25A
V
DRM
= 200V to 800V
Low I
GT
< 200
A
FEATURES
Symbol
Parameter
Voltage
Unit
B
D
M
N
V
DRM
V
RRM
Repetitive peak off-state voltage
T
j
= 125
C R
GK
= 1K
200
400
600
800
V
The X02xxxA series
of SCRs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
applications where low gate sensitivity is required.
DESCRIPTION
K
G
A
1/5
P
G (AV)
= 0.2 W P
GM
= 3 W (tp = 20
s)
I
GM
= 1.2 A (tp = 20
s)
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
150
C/W
Rth(j-l)
Junction to leads for DC
60
C/W
THERMAL RESISTANCES
Symbol
Test Conditions
Sensitivity
Unit
02
03
05
I
GT
V
D
=12V (DC) R
L
=140
Tj= 25
C
MIN
20
20
A
MAX
200
200
50
V
GT
V
D
=12V (DC) R
L
=140
Tj= 25
C
MAX
0.8
V
V
GD
V
D
=V
DRM
R
L
=3.3k
R
GK
= 1 K
Tj= 125
C
MIN
0.1
V
V
RGM
I
RG
=10
A
Tj= 25
C
MIN
8
V
tgd
V
D
=V
DRM
I
TM
= 3 x I
T(AV
)
dI
G
/dt = 0.1A/
s
I
G
= 10mA
Tj= 25
C
TYP
0.5
s
I
H
I
T
= 50mA R
GK
= 1 K
Tj= 25
C
MAX
5
mA
I
L
I
G
=1mA R
GK
= 1 K
Tj= 25
C
MAX
6
mA
V
TM
I
TM
= 2.5A tp= 380
s
Tj= 25
C
MAX
1.45
V
I
DRM
I
RRM
V
D
= V
DRM
R
GK
= 1 K
V
R
= V
RRM
Tj= 25
C
MAX
5
A
Tj= 110
C
MAX
200
A
dV/dt
V
D
=67%V
DRM
R
GK
= 1 K
Tj= 110
C
TYP
15
20
15
V/
s
tq
I
TM
= 3 x I
T(AV
) V
R
=35V
dI/dt=10A/
s
tp=100
s
dV/dt=2V/
s
V
D
= 67%V
DRM
R
GK
= 1 K
Tj= 110
C
MAX
100
s
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
X
02
03
M
A
SCR TOP GLASS
CURRENT
PACKAGE :
A = TO92
VOLTAGE
SENSITIVITY
X02xxxA
2/5
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
P (W)
360
O
= 180
o
= 120
o
= 90
o
= 60
o
= 30
o
DC
I
(A)
T(AV)
Fig.1 : Maximum average power dissipation ver-
sus average on-state current.
0
10
20
30 40
50
60 70
80
90 100 110 120 130
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
(A)
T(AV)
= 180
o
DC
Tlead ( C)
o
Fig.3 : Average on-state current versus lead tem-
perature.
Igt
Ih
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-40
-20
0
20
40
60
80
100
120
140
Igt[Tj]
Igt[Tj=25 C]
o
Ih[Tj]
Ih[Tj=25 C]
o
Tj( C)
o
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-50
-70
-90
-110
P (W)
Tlead ( C)
o
Tamb ( C)
o
Rth( j-l)
Rth( j-a)
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tlead).
1E-3
1E-2
1E-1
1 E+0
1 E+1
1E +2 5 E+2
0.01
0.10
1.00
Zth(j-a)/Rth(j-a)
tp (s )
Fig.4 : Relative variation of thermal impedance
junction to ambient versus pulse duration.
1
10
100
100 0
0
5
10
15
20
25
Tj initial = 25 C
o
Number of cycles
I
(A)
TSM
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
X02xxxA
3/5
1
10
1
10
100
I
(A). I
2
t (A
2
s)
TSM
Tj initial = 25 C
o
ITSM
tp(ms)
I
2
t
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp
10ms, and
corresponding value of I
2
t.
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0.1
1
10
100
I
(A)
TM
Tj ini tia l
25 C
o
Tj max
V
(V)
TM
Tj max
Vto =1. 05V
Rt =0.1 50
Fig.8 : On-state characteristics (maximum values).
X02xxxA
4/5
PACKAGE MECHANICAL DATA
TO92 (Plastic)
D
F
a
E
B
A
C
REF.
DIMENSIONS
Millimeters
Inches
Typ.
Min.
Max.
Typ.
Min. Max.
A
1.35
0.053
B
4.7
0.185
C
2.54
0.100
D
4.4
4.8
0.173 0.189
E
12.7
0.500
F
3.7
0.146
a
0.45
0.017
Marking : Type number
Weight : 0.2 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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X02xxxA
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