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Электронный компонент: X0402MF0AA2

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1/5
X04 Series
SENSITIVE
4A SCR
S
September 2000 - Ed: 3
MAIN FEATURES:
DESCRIPTION
Thanks to highly sensitive triggering levels, the
X04 SCR series is suitable for all applications
where the available gate current is limited, such as
capacitive discharge ignitions, motor control in
kitchen aids, overvoltage crowbar protection in low
power supplies...
Symbol
Value
Unit
I
T(RMS)
4
A
V
DRM
/V
RRM
600 and 800
V
I
GT
50 to 200
A
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (180 conduction angle)
Tl = 60C
4
A
Tamb = 25C
1.35
IT
(AV)
Average on-state current (180 conduction angle)
Tl = 60C
2.5
A
Tamb = 25C
0.9
I
TSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25C
33
A
tp = 10 ms
30
I
t
I
t Value for fusing
tp = 10 ms
Tj = 25C
4.5
A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
100ns
F = 60 Hz
Tj = 125C
50
A/s
I
GM
Peak gate current
tp = 20 s
Tj = 125C
1.2
A
P
G(AV)
Average gate power dissipation
Tj = 125C
0.2
W
T
stg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
C
TO202-3
(X04xxF)
X04 Series
2/5
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
THERMAL RESISTANCES
PRODUCT SELECTOR
Symbol
Test Conditions
X04xx
Unit
02
05
I
GT
V
D
= 12 V
R
L
= 140
MIN.
_
20
A
MAX.
200
50
V
GT
MAX.
0.8
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
R
GK
= 1 k
Tj = 125C
MIN.
0.1
V
V
RG
I
RG
= 10
A
MIN.
8
V
I
H
I
T
= 50mA
R
GK
= 1k
MAX.
5
mA
I
L
I
G
= 1mA
R
GK
= 1k
MIN.
6
mA
dV/dt
V
D
= 67% V
DRM
R
GK
= 1k
Tj = 110C
MIN.
10
15
V/s
V
TM
I
TM
= 8 A
tp = 380 s
Tj = 25C
MAX.
1.8
V
V
t0
Threshold voltage
Tj = 125C
MAX.
0.95
V
R
d
Dynamic resistance
Tj = 125C
MAX.
100
m
I
DRM
I
RRM
V
DRM
= V
RRM
R
GK
= 1 k
Tj = 25C
MAX.
5
A
Tj = 125C
1
mA
Symbol
Parameter
Value
Unit
R
th(j-l)
Junction to leads (DC)
15
C/W
R
th(j-a)
Junction to ambient (DC)
100
Part Number
Voltage
Sensitivity
Package
600 V
800 V
X0402MF
X
200 A
TO202-3
X0402NF
X
200 A
TO202-3
X0405MF
X
50 A
TO202-3
X0405NF
X
50 A
TO202-3
X04 Series
3/5
ORDERING INFORMATION
OTHER INFORMATION
Note: xx = sensitivity, y = voltage
Part Number
Marking
Weight
Base Quantity
Packing mode
X04xxyF 1AA2
X04xxyF
0.8 g
250
Bulk
X04xxyF 0AA2
X04xxyF
0.8 g
50
Tube
Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2-1: Average and D.C. on-state current
versus lead temperature.
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
X04 Series
4/5
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 7: Relative variation of dV/dt immunity
versus
gate-cathode
capacitance
(typical
values).
Fig. 8:
Surge peak on-state current versus
number of cycles.
Fig. 9:
Non-repetitive surge
peak on-state
current
for
a
sinusoidal
pulse
with
width
tp < 10 ms, and corresponding value of It.
X04 Series
5/5
Fig. 10:
On-state
characteristics (maximum
values).
PACKAGE MECHANICAL DATA
TO202-3 (Plastic)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
10.1
0.398
C
7.3
0.287
D
10.5
0.413
F
1.5
0.059
H
0.51
0.020
J
1.5
0.059
M
4.5
0.177
N
5.3
0.209
N1
2.54
0.100
O
1.4
0.055
P
0.7
0.028
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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