X04xxxF
August 1998 Ed : 1A
SENSITIVE GATE SCR
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(180
conduction angle)
Tc= 90
C
4
A
Ta= 25
C
1.35
I
T(AV)
Mean on-state current
(180
conduction angle)
Tc= 90
C
2.5
A
Ta= 25
C
0.9
I
TSM
Non repetitive surge peak on-state current
(T
j
initial = 25
C )
tp = 8.3 ms
33
A
tp = 10 ms
30
I
2
t
I
2
t Value for fusing
tp = 10 ms
4.5
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 10 mA di
G
/dt = 0.1 A/
s.
50
A/
s
T
stg
T
j
Storage and operating junction temperature range
- 40, + 150
- 40, + 125
C
Tl
Maximum lead temperature for soldering during 10s at
4.5mm from case
260
C
ABSOLUTE RATINGS (limiting values)
I
T(RMS)
= 4A
V
DRM
= 400V to 800V
Low I
GT
< 200
A
FEATURES
Symbol
Parameter
Voltage
Unit
D
M
N
V
DRM
V
RRM
Repetitive peak off-state voltage
T
j
= 125
C R
GK
= 1K
400
600
800
V
The X04xxxF series of SCRs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
applications where low gate sensitivity is required,
like small engine ignition, SMPS crowbar
protection, food processor.
DESCRIPTION
TO202-3
(Plastic)
K
A
G
1/4
P
G (AV)
= 0.2 W max. P
GM
= 3 W max. (tp = 20
s) I
GM
= 1.2 A max. (tp = 20
s)
V
GD
= 0.1Vmin. (V
D
=V
DRM
R
L
=3.3k
R
GK
= 1 K
Tj= 125C)
GATE CHARACTERISTICS
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
100
C/W
Rth(j-c)
Junction to case for DC
7.5
C/W
THERMAL RESISTANCES
Symbol
Test Conditions
Sensitivity
Unit
02
03
05
I
GT
V
D
=12V (DC) R
L
=140
Tj= 25
C
MIN
20
20
A
MAX
200
200
50
V
GT
V
D
=12V (DC) R
L
=140
Tj= 25
C
MAX
0.8
V
V
RGM
I
RG
=10
A
Tj= 25
C
MIN
8
V
I
H
I
T
= 50mA R
GK
= 1 K
Tj= 25
C
MAX
5
mA
I
L
I
G
=1mA R
GK
= 1 K
Tj= 25
C
MAX
6
mA
V
TM
I
TM
= 8A tp= 380
s
Tj= 25
C
MAX
1.8
V
I
DRM
I
RRM
V
D
= V
DRM
R
GK
= 1 K
V
R
= V
RRM
Tj= 25
C
MAX
5
A
Tj= 110
C
MAX
200
dV/dt
V
D
=67%V
DRM
R
GK
= 1 K
Tj= 110
C
MIN
10
15
15
V/
s
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
X 04 03 M F
SCR TOP GLASS
CURRENT
PACKAGE :
F=TO202-3
VOLTAGE
SENSITIVITY
X04xxxF
2/4
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
P (W)
360
O
= 180
o
= 120
o
= 90
o
= 60
o
= 30
o
DC
I
(A)
T(AV)
Fig.1 : Maximum average power dissipation ver-
sus average on-state current.
0
20
40
60
80
100
120
140
0
1
2
3
4
5
-85
-95
-105
-115
-125
P (W)
Tcase ( C)
o
Rth(j-c)
Rth(j-a)
Tamb ( C)
o
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tcase).
0
10
20
30
40
50
60
70
80
90 100 110 120 130
0
0.2
0.4
0.6
0.8
1
I
(A)
T(AV)
= 180
o
Tamb ( C)
o
Fig.3 : Average on-state current versus case tem-
perature.
1E-3
1E-2
1E-1
1E +0
1E +1
1E+2 5E+2
0.01
0.10
1.00
Zth(j-a)/Rth(j-a)
tp(s)
Fig.4 : Relative variation of thermal impedance
junction to ambient versus pulse duration.
Igt
Ih
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-40
-20
0
20
40
60
80
100
120
140
Igt[Tj]
Igt[Tj=25 C]
o
Ih[Tj]
Ih[Tj=25 C]
o
Tj( C)
o
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
1
10
100
1000
0
5
10
15
20
25
30
35
Tj initial = 25 C
o
Number of cycles
I
(A)
TSM
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
X04xxxF
3/4
1
10
1
10
100
I
(A). I
2
t (A
2
s)
TSM
Tj initial = 25 C
o
I
TSM
tp(ms)
I
2
t
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp
10ms, and
corresponding value of I
2
t.
0
0.5
1
1.5
2
2.5
3
3.5
4
1
10
100
I
(A)
TM
Tj initial
25 C
o
Tj max
V
(V)
TM
Tj max
Vto =0.95V
Rt =0.100
Fig.8 : On-state characteristics (maximum values).
PACKAGE MECHANICAL DATA
TO202-3 (Plastic)
A
O
P
N
N1
F
C
D
J
H
M
REF.
DIMENSIONS
Millimeters
Inches
Typ.
Max.
Typ.
Max.
A
10.1
0.398
C
7.3
0.287
D
10.5
0.413
E
7.4
0.290
F
1.5
0.059
H
0.51
0.020
J
1.5
0.059
M
4.5
0.177
N
5.3
0.209
N1
2.54
0.100
O
1.4
0.055
P
0.7
0.028
Marking : type number
Weight : 1 g
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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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