7-3
2N6660
2N6661
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Features
s
s
Free from secondary breakdown
s
s
Low power drive requirement
s
s
Ease of paralleling
s
s
Low C
ISS
and fast switching speeds
s
s
Excellent thermal stability
s
s
Integral Source-Drain diode
s
s
High input impedance and high gain
s
s
Complementary N- and P-channel devices
Applications
s
s
Motor controls
s
s
Converters
s
s
Amplifiers
s
s
Switches
s
s
Power supply circuits
s
s
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
BV
DSS
/
R
DS(ON)
I
D(ON)
BV
DGS
(max)
(min)
TO-39
60V
3.0
1.5A
2N6660
90V
4.0
1.5A
2N6661
Order Number / Package
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Note: See Package Outline section for dimensions.
TO-39
Ordering Information
D G S
Case: DRAIN
7-4
2N6660/2N6661
Thermal Characteristics
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
C
= 25
C
C/W
C/W
2N6660
1.1A
3A
6.25W
20
125
1.1A
3.0A
2N6661
0.9A
3A
6.25W
20
125
0.9A
3.0A
*
I
D
(continuous) is limited by max rated T
j
.
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
2N6660
60
2N6661
90
V
GS(th)
Gate Threshold Voltage
0.8
2.0
V
V
GS
= V
DS
, I
D
=1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-3.8
-5.5
mV/
C
V
GS
= V
DS
, I
D
=1mA
I
GSS
Gate Body Leakage
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
10
A
V
GS
= 0V, V
DS
= Max Rating
500
V
GS
= 0V, V
DS
= 0.8 Max Rating,
T
A
= 125
C
I
D(ON)
ON-State Drain Current
1.5
A
V
GS
= 10V, V
DS
= 10V
R
DS(ON)
All
5.0
V
GS
= 5V, I
D
= 0.3A
2N6660
3.0
V
GS
= 10V, I
D
= 1A
2N6661
4.0
V
GS
= 10V, I
D
= 1A
G
FS
Forward Transconductance
170
m
V
DS
= 25V, I
D
= 0.5A
C
ISS
Input Capacitance
50
C
OSS
Common Source Output Capacitance
40
pF
C
RSS
Reverse Transfer Capacitance
10
t
(ON)
Turn-ON Time
10
t
(OFF)
Turn-OFF Time
10
V
SD
Diode Forward Voltage Drop
1.2
V
V
GS
= 0V, I
SD
= 1A
t
rr
Reverse Recovery Time
350
ns
V
GS
= 0V, I
SD
= 1A
Notes:
1: All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2: All A.C. parameters sample tested.
Drain-to-Source
Breakdown Voltage
V
V
GS
= 0V, I
D
= 10
A
Static Drain-to-Source
ON-State Resistance
V
GS
= 0V, V
DS
= 24V
f = 1 MHz
ns
V
DD
= 25V,
I
D
= 1A, R
GEN
= 25
Switching Waveforms and Test Circuit
Electrical Characteristics
(@ 25
C unless otherwise specified)
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
PDF 
ZIP