7-5
2N7000
N-Channel Enhancement-Mode
Vertical DMOS FET
Package Options
Note: See Package Outline section for dimensions.
Ordering Information
Order Number / Package
BV
DSS
/
R
DS(ON)
I
D(ON)
BV
DGS
(max)
(min)
TO-92
60V
5.0
75mA
2N7000
Features
s
s
Free from secondary breakdown
s
s
Low power drive requirement
s
s
Ease of paralleling
s
s
Low C
ISS
and fast switching speeds
s
s
Excellent thermal stability
s
s
Integral Source-Drain diode
s
s
High input impedance and high gain
s
s
Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
Applications
s
s
Motor controls
s
s
Converters
s
s
Amplifiers
s
s
Switches
s
s
Power supply circuits
s
s
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
30V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
TO-92
S G D
7-6
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
60
V
I
D
= 10
A, V
GS
= 0V
V
GS(th)
Gate Threshold Voltage
0.8
3.0
V
V
GS
= V
DS
, I
D
= 1mA
I
GSS
Gate Body Leakage
10
nA
V
GS
=
15V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
1
A
V
GS
= 0V, V
DS
= 48V
1
mA
V
GS
= 0V, V
DS
= 48V
T
A
= 125
C
I
D(ON)
ON-State Drain Current
75
mA
V
GS
= 4.5V, V
DS
= 10V
R
DS(ON)
Static Drain-to-Source ON-State Resistance
5.3
V
GS
= 4.5V, I
D
= 75mA
R
DS(ON)
Static Drain-to-Source ON-State Resistance
5.0
V
GS
= 10V, I
D
= 0.5A
G
FS
Forward Transconductance
100
m
V
DS
= 10V, I
D
= 0.2A
C
ISS
Input Capacitance
60
C
OSS
Common Source Output Capacitance
25
pF
C
RSS
Reverse Transfer Capacitance
5
t
(ON)
Turn-ON Time
10
V
DD
= 15V, I
D
= 0.5A,
t
(OFF)
Turn-OFF Time
10
R
GEN
= 25
V
SD
Diode Forward Voltage Drop
0.85
V
I
SD
= 0.2A, V
GS
= 0V
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
2N7000
Thermal Characteristics
Electrical Characteristics
(@ 25
C unless otherwise specified)
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
ns
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
C
= 25
C
C/W
C/W
TO-92
200mA
500mA
1W
125
170
200mA
500mA
*
I
D
(continuous) is limited by max rated T
j
.
7-7
2N7000
Typical Performance Curves
Output Characteristics
2.5
2.0
1.5
1.0
0.5
0
10
20
30
50
40
V
DS
(volts)
I
D
(amperes)
Saturation Characteristics
0
2
4
6
10
8
V
DS
(volts)
I
D
(amperes)
Maximum Rated Safe Operating Area
0.1
100
10
1.0
0.01
0.1
1.0
0.001
V
DS
(volts)
I
D
(amperes)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1
t
p
(seconds)
Transconductance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0
0
1.0
0.2
0.4
0.6
0.8
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Case Temperature
0
150
100
50
2.0
1.0
125
75
25
P
D
(watts)
TO-92
T
A
= -55
C
25
C
125
C
V
DS
V
DS
= 25V
TO-92 (pulsed)
8V
6V
4V
VGS =10V
0
0
0
8V
6V
4V
2.5
2.0
1.5
1.0
0.5
0
TO-92 (DC)
TC = 25
C
TO-92
P
D
= 1W
T
C
= 25
C
T
C
(
C)
V
GS
= 10V
7-8
Typical Performance Curves
2N7000
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
GS
(volts)
T
j
(
C)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
(th)
and R
DS
Variation with Temperature
On-Resistance vs. Drain Current
R
DS(ON)
(ohms)
BV
DSS
(normalized)
T
j
(
C)
Transfer Characteristics
V
GS
(volts)
I
D
(amperes)
I
D
(amperes)
BV
DSS
Variation with Temperature
0
2
4
6
8
10
2.5
2.0
1.5
1.0
0.5
-50
0
50
100
150
1.1
1.0
0.9
0
0
2.5
1.0
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0.2
0.4
0.6
0.8
1.0
-50
0
50
100
150
V
DS
= 10V
V
(th)
@ 1mA
V
GS
= 4.5V
V
GS
= 10V
0.5
1.5
2.0
1.0
2.0
3.0
5.0
4.0
T
A
= -55
C
25
C
125
C
0
40 pF
40V
80 pF
0
1.9
1.6
1.3
1.0
0.7
0.4
V
DS
= 25V
Capacitance vs. Drain-to-Source Voltage
100
C (picofarads)
V
DS
(volts)
0
10
20
30
40
75
50
25
0
f = 1MHz
C
ISS
C
OSS
C
RSS
R
DS
@ 10V, 1.0A
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