DN2470
Rev. 1 011105
1
Initial Release
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakages
Application
Normally-on switches
Solid state relays
Battery operated systems
Converters
Linear amplifiers
Constant current sources
Telecom
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSX
Drain-to-Gate Voltage
BV
DGX
Gate-to-Source Voltage
20V
Operating and Storage
Temperature
-55C to +150C
Soldering Temperature*
300C
* Distance of 1.6mm from case for 10 seconds.
Ordering Information
General Description
This low threshold depletion-mode (normally-on)
transistor utilizes an advanced vertical DMOS
structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces a
device with the power handling capabilities of bipolar
transistors and with the high input impedance and
positive temperature coefficient inherent in MOS
devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-
induced secondary breakdown.
Supertex's vertical DMOS FET is ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.
Package Option
** "Green" Certified Package
Order Number / Package
TO-252
BV
DSX
/ BV
DGX
R
DS(ON)
(max) I
DSS
(typ)
DN2470K4 700V
42
500mA
DN2470K4-G **
700V
42
500mA
DN2470
NR011905
N-Channel Depletion-Mode
Vertical DMOS FET
DN2470
Rev. 1 011105
2
Thermal Characteristics
Package I
D(continuous)
* I
D(pulsed)
Power Dissipation
@ T
A
=25C
JC
C/W
JA
C/W
I
DR
* I
DRM
TO-252 170mA 500mA
2.5W**
6.25 50**
170mA
500mA
* I
D(continuous)
is limited by maximum rated T
J
of 150C
** Mounted on FR4, 25mm x 25mm x 1.57mm
Electrical Characteristics
(@25C unless otherwise specified)
Symbol Parameter
Min Typ Max Units Conditions
BV
DSX
Drain-to-Source
Breakdown Voltage
700 V V
GS
=-5V, I
D
=100A
V
GS(OFF)
Gate-to-Source OFF Voltage
-1.5
-3.5
V
V
DS
=25V, I
D
=10A
V
GS(OFF)
Change in V
GS(OFF)
with Temperature
4.5
mV/C V
DS
=25V, I
D
=10A
I
GSS
Gate Body Leakage
100
nA
V
GS
=20V, V
DS
=0V
1.0
A
V
GS
=-10V, V
DS
=Max Rating
I
D(OFF)
Drain-to-Source Leakage Current
1.0
mA
V
GS
=-10V, V
DS
=0.8 Max
Rating, T
A
=125C
I
DSS
Saturated Drain-to-source Current
500
mA
V
GS
=0V, V
DS
=25V
R
DS(ON)
Static Drain-to-Source ON-State Resistance
42
V
GS
=0V, I
D
=100mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.1
%/C
V
GS
=0V, I
D
=100mA
G
FS
Forward
Transconductance
100
mmho
I
D
=100mA, V
DS
=10V
C
ISS
Input
Capacitance
540
C
OSS
Common Source Output Capacitance
60
C
RSS
Reverse Transfer Capacitance
25
pF
V
GS
=-10V, V
DS
=25V
f=1MHz
t
d(ON)
Turn-ON Delay Time
30
t
r
Rise
Time
45
t
d(OFF)
Turn-Off Delay Time
45
t
f
Fall
Time
60
ns
V
DD
=25V,
I
D
=100mA,
R
GEN
=25
V
SD
Diode Forward Voltage Drop
1.8
V
V
GS
=0V, I
SD
=200mA
t
rr
Reverse Recovery Time
800
ns
V
GS
=0V, I
SD
=200mA
Notes:
1) All DC parameters 100% tested at 25C unless otherwise stated. (Pulsed test: 300s pulse at 2% duty cycle.)
2) All AC parameters sample tested.
Switching Waveforms and Test Circuit
R
GEN
Input
Pulse
Generator
V
DD
R
L
D.U.T
OUTPUT
0V
-10V
V
DD
t
d(OFF)
Input
Output
t
r
t
f
t
d(ON)
t
(ON)
t
(OFF)
10%
90%
90%
10%
90%
10%
0V
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