1
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
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BV
DSX
/
R
DS(ON)
I
DSS
BV
DGX
(max)
(min)
TO-92
TO-243AA*
300V
12
200mA
DN2530N3
DN2530N8
DN2530
Advanced DMOS Technology
Not recommended for new designs. Please use DN3535 or
DN3545 instead.
These depletion-mode (normally-on) transistors utilize an ad-
vanced vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transis-
tors and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Ordering Information
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSX
Drain-to-Gate Voltage
BV
DGX
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55C to +150C
Soldering Temperature*
300C
*
Distance of 1.6 mm from case for 10 seconds.
Package Options
Order Number / Package
*
Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
N-Channel Depletion-Mode
Vertical DMOS FETs
Note: See Package Outline section for dimensions.
Product marking for TO-243AA:
DN5T
Where
= 2-week alpha date code
TO-243AA
(SOT-89)
G
D
S
D
TO-92
S G D
2
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSX
Drain-to-Source
300
V
V
GS
= -5V, I
D
= 100A
Breakdown Voltage
V
GS(OFF)
Gate-to-Source OFF Voltage
1.0
3.5
V
V
DS
= 25V, I
D
= 10A
V
GS(OFF)
Change in V
GS(OFF)
with Temperature
4.5
mV/C
V
DS
= 25V, I
D
= 10A
I
GSS
Gate Body Leakage Current
100
nA
V
GS
= 20V, V
DS
= 0V
I
D(OFF)
Drain-to-Source Leakage Current
10
A
V
GS
= -10V, V
DS
= Max Rating
1
mA
V
GS
= -10V, V
DS
= 0.8 Max Rating
T
A
= 125C
I
DSS
Saturated Drain-to-Source Current
200
mA
V
GS
= 0V, V
DS
= 25V
R
DS(ON)
Static Drain-to-Source
12
V
GS
= 0V, I
D
= 150mA
ON-State Resistance
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.1
%/C
V
GS
= 0V, I
D
= 150mA
G
FS
Forward Transconductance
300
m
I
D
= 150mA, V
DS
= 10V
C
ISS
Input Capacitance
300
V
GS
= -10V, V
DS
= 25V
C
OSS
Common Source Output Capacitance
30
pF
f = 1 MHz
C
RSS
Reverse Transfer Capacitance
5
t
d(ON)
Turn-ON Delay Time
10
V
DD
= 25V,
t
r
Rise Time
15
ns
I
D
= 150mA,
t
d(OFF)
Turn-OFF Delay Time
15
R
GEN
= 25
t
f
Fall Time
20
V
SD
Diode Forward Voltage Drop
1.8
V
V
GS
= -10V, I
SD
= 150mA
t
rr
Reverse Recovery Time
600
ns
V
GS
= -10V, I
SD
= 1A
Notes:
1.
All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2.
All A.C. parameters sample tested.
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
A
= 25
C
C/W
C/W
TO-92
175mA
500mA
0.74W
125
170
175mA
500mA
TO-243AA
200mA
500mA
1.6
15
78
200mA
500mA
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25C unless otherwise specified)
DN2530
Thermal Characteristics
Switching Waveforms and Test Circuit
3
Typical Performance Curves
Output Characteristics
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
200
250
V
DS
(volts)
I
D
(amperes)
Transconductance vs. Drain Current
I
D
(amperes)
Power Dissipation vs. Case Temperature
0
150
100
50
125
75
25
TO-92
TO-243AA
V
GS
= 1.0V
0.5V
-0.5V
-1.0V
-1.5V
0V
Saturation Characteristics
0.25
0.2
0.15
0.1
0.05
0
2.0
1.6
1.2
0.8
0.4
0
0
1
2
3
5
4
V
GS
= 1.0V
-1.5V
0.5V
0V
-0.5V
-1.0V
Maximum Rated Safe Operating Area
1
1000
100
10
1
0.1
0.01
0.001
V
DS
(volts)
I
D
(amperes)
TO-92 (pulsed)
T
C
= 25C
TO-92 (DC)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1
t
p
(seconds)
0
TO-243AA
T
A
= 25C
P
D
= 1.6W
0.5
0.4
0.3
0.2
0.1
0
0
0.25
0.05
0.1
0.15
0.2
V
DS
= 10V
T
A
= -55C
T
A
= 25C
T
A
= 125C
TO-92
T
C
= 25C
P
D
= 1.0W
I
D
(amperes)
V
DS
(volts)
G
FS
(siemens)
T
C
(C)
P
D
(watts)
DN2530
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
12/13/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
BV
DSS
Variation with Temperature
BV
DSS
(normalized)
1.1
1.05
1.0
0.95
0.9
0.85
-50
0
0.2
0.4
0.6
0.8
1.0
0
50
100
150
Transfer Characteristics
T
j
(C)
V
GS
(Volts)
V
DS
(Volts)
I
D
(amperes)
1.0
0.8
0.6
0.4
0.2
0
-2
-1
0
1
2
Capacitance Vs. Drain-to-Source Voltage
C (picofarads)
200
150
100
50
0
0
10
20
30
40
V
GS
= -5V
I
D
= 100A
V
GS
= 0V
V
DS
= 10V
V
GS
= -10V
C
OSS
C
RSS
C
ISS
T
A
= -55C
T
A
= 25C
RDS (ON) @ ID = 150mA
VGS(OFF) @ 10A
VDS = 40V
T
A
= 125C
On-Resistance vs. Drain Current
50
40
30
20
10
0
I
D
(amps)
Q
C
(Nanocoulombs)
R
DS(on)
(ohms)
-50
0
50
100
150
0
1
2
3
4
5
V
GS
(Off) and R
DS
Variation with Temperature
2.5
2
1.5
1
0.5
0
15
10
5
0
-5
T
j
(C)
V
GS(th)
(normalized)
Gate Drive Dynamic Characteristics
V
GS
(volts)
VDS = 20V
250pF
152pf
Typical Performance Curves
DN2530
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