1
DN3135
DN3135
Advanced DMOS Technology
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex's
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
istic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSX
Drain-to-Gate Voltage
BV
DGX
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
N-Channel Depletion-Mode
Vertical DMOS FETs
Package Options
TO-243AA
(SOT-89)
G
D
S
D
Note: See Package Outline section for dimensions.
TO-236AB
(SOT-23)
top view
Gate
Source
Drain
*
Same as SOT-89. Products shipped on 2000 piece carrier tape reels.
** Same as SOT-23. Products skipped on 3000 piece carreir tape reels.
*** Die in wafer form.
Ordering Information
BV
DSX
/
R
DS(ON)
I
DSS
BV
DGX
(max)
(min)
TO-236AB**
TO-243AA*
Die***
350V
35
180mA
DN3135K1
DN3135N8
DN3135NW
Order Number / Package
10/23/00
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Product marking for TO-243AA:
Where *= 2-week alpha date code
DN1S*
Product marking for SOT-23:
Where *= 2-week alpha date code
N1S*
2
DN3135
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
Electrical Characteristics
(@ 25
C unless otherwise specified)
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
10/23/00
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSX
Drain-to-Souce Breakdown Voltage
350
V
V
GS
= -5.0V, I
D
= 100
A
V
GS(OFF)
Gate-to-Source OFF Voltage
-1.5
-3.5
V
V
DS
= 15V, I
D
= 10
A
V
GS(OFF)
Change in V
GS(OFF)
with Temperature
4.5
mV/
C
V
DS
= 15V, I
D
= 10
A
I
GSS
Gate Body Leakage Current
100
nA
V
GS
=
20V, V
DS
= 0V
I
D(OFF)
Drain-to-Source Leakage Current
1.0
A
V
GS
= -5.0V, V
DS
= Max Rating
1.0
mA
V
GS
= -5.0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
DSS
Saturated Drain-to-Source Current
180
mA
V
GS
= 0V, V
DS
= 15V
R
DS(ON)
Static Drain-to-Source
35
V
GS
= 0V, I
D
= 150mA
ON-State Resistance
35
V
GS
= -0.8V, I
D
= 50mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.1
%/
C
V
GS
= 0V, I
D
= 150mA
G
FS
Forward Transconductance
140
m
m
I
D
= 100mA, V
DS
=10V
C
ISS
Input Capacitance
60
120
C
OSS
Common Source Output Capacitance
6.0
15
pF
V
GS
= -5.0V, V
DS
= 25V,
C
RSS
Reverse Transfer Capacitance
3.0
10
f =1.0Mhz
t
d(ON)
Turn-ON Delay Time
10
ns
V
DD
= 25V,
t
r
Rise Time
15
I
D
= 150mA,
t
d(OFF)
Turn-OFF Delay Time
15
R
GEN
= 25
,
t
f
Fall Time
20
V
GS
= 0V to -10V
V
SD
Diode Forward Voltage Drop
1.8
V
V
GS
= -5.0V, I
SD
= 150mA
t
rr
Reverse Recovery Time
800
ns
V
GS
= -5.0V, I
SD
= 150mA
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
A
= 25
C
C/W
C/W
TO-236AB
72mA
300mA
0.36W
200
350
72mA
300mA
TO-243AA
135mA
300mA
1.3W
34
97
135mA
300mA
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Thermal Characteristics
PDF 
ZIP