1
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DN3525
Advanced DMOS Technology
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex's
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
istic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
N-Channel Depletion-Mode
Vertical DMOS FETs
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSX
Drain-to-Gate Voltage
BV
DGX
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55C to +150C
* Same as SOT-89. Products shipped on 2000 piece carrier tape reels.
** Die in wafer form.
BV
DSX
/
R
DS(ON)
I
DSS
BV
DGX
(max)
(min)
TO-243AA*
Die**
250V
6.0
300mA
DN3525N8
DN3525NW
Ordering Information
Order Number / Package
Package Options
Note: See Package Outline section for dimensions.
TO-243AA
(SOT-89)
G
D
S
D
Product marking for TO-243AA:
Where
= 2-week alpha date code
DN5C
2
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
Thermal Characteristics
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
A
= 25
C
C/W
C/W
TO-243AA
360mA
600mA
1.6W
15
78
360mA
600mA
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
DN3525
Electrical Characteristics
(@ 25C unless otherwise specified)
Notes:
1.
All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2.
All A.C. parameters sample tested.
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSX
Drain-to-Souce Breakdown Voltage
250
V
V
GS
= -5.0V, I
D
= 100A
V
GS(OFF)
Gate-to-Source OFF Voltage
-1.5
-3.5
V
V
DS
= 15V, I
D
= 1.0mA
V
GS(OFF)
Change in V
GS(OFF)
with Temperature
4.5
mV/C
V
DS
= 15V, I
D
= 1.0mA
I
GSS
Gate Body Leakage Current
100
nA
V
GS
= 20V, V
DS
= 0V
I
D(OFF)
Drain-to-Source Leakage Current
1.0
A
V
GS
= -5.0V, V
DS
= Max Rating
1.0
mA
V
GS
= -5.0V, V
DS
= 0.8 Max Rating
T
A
= 125C
I
DSS
Saturated Drain-to-Source Current
300
mA
V
GS
= 0V, V
DS
= 15V
R
DS(ON)
Static Drain-to-Source
6.0
V
GS
= 0V, I
D
= 200mA
ON-State Resistance
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.1
%/C
V
GS
= 0V, I
D
= 200mA
G
FS
Forward Transconductance
225
m
g
I
D
= 150mA, V
DS
=10V
C
ISS
Input Capacitance
270
350
C
OSS
Common Source Output Capacitance
20
60
pF
V
GS
= -5.0V, V
DS
= 25V, f =1.0Mhz
C
RSS
Reverse Transfer Capacitance
5.0
20
t
d(ON)
Turn-ON Delay Time
20
ns
V
DD
= 25V,
t
r
Rise Time
25
I
D
= 150mA,
t
d(OFF)
Turn-OFF Delay Time
25
R
GEN
= 25,
t
f
Fall Time
40
V
GS
= 0V to -10V
V
SD
Diode Forward Voltage Drop
1.8
V
V
GS
= -5.0V, I
SD
= 150mA
t
rr
Reverse Recovery Time
800
ns
V
GS
= -5.0V, I
SD
= 150mA
3
Typical Performance Curves
I D
(Amperes)
VDS (Volts)
Output Characteristics
Saturation Characteristics
I D
(Amperes)
VDS (Volts)
G FS
(Siemens)
ID (Milliamperes)
Transconductance vs. Drain Current
Power Dissipation vs. Ambient Temperature
PD
(W
atts)
TA (C)
Maximum Rated Safe Operating Area
I D
(Amperes)
VDS (Volts)
Thermal Response Characteristics
Thermal
Resistance
(normalized)
tp (seconds)
1
1000
100
10
TO-243AA (Pulsed)
TA=25C
0.001
0.01
0.1
10
TO-243AA (DC)
1.0
0.8
0.6
0.4
0.2
0
0.001
10
0.01
0.1
1
TO-243AA
T
A
= 25
C
P
D
= 1.6W
V
GS
= +2V
-0.5V
0V
0
25
50
75
100
125
150
0.0
0.4
0.8
1.2
1.6
2.0
TO-243AA
-1V
-0.8V
0
50
100
150
200
250
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
=+2V
V
GS
=0V
V
GS
=-0.5V
V
GS
=-1.5V
V
GS
=-2V
V
GS
=-0.8V
V
GS
=-1V
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-1.5V
-2V
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.2
0.4
0.6
0.8
1.0
TA=25C
TA=125C
TA=-55C
VDS=10V
1.0
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
12/13/010
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Typical Performance Curves
0
1000
2000
3000
4000
5000
-5
-4
-3
-2
-1
0
1
2
3
0
10
20
30
40
0
50
100
150
200
250
300
350
-3
-2
-1
0
1
2
0
400
800
1200
1600
2000
R
DS(ON)
(ohms)
ID (Amperes)
On Resistance vs. Drain Current
VGS(OFF) and RDS(ON) w/ Temperature
V
GS(OFF)
(nor
maliz
ed)
TJ (C)
R
DS(ON)
(nor
maliz
ed)
Transfer Characteristics
I D
(Milliamperes)
VGS (Volts)
-50
0
50
100
150
0.8
0.9
1.0
1.1
1.2
ID = 100A
VGS = -5V
VDS = 10V
TA = -55C
TA = 25C
TA = 125C
VGS = -5V
CISS
COSS
CRSS
ID = 200mA
VDS=30V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
VGS = 0V
TJ = 25C
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
VGS(OFF) @ 1mA, 15V
RDS(on) @ 0V, 200mA
BV
DSV
(Nor
maliz
ed)
TJ (
C)
BV
DSV
Variation with Temperature
Capacitance vs. Drain Source Voltage
C
(picof
ar
ads)
VDS (volts)
Gate Drive Dynamic Characteristics
Q (picocoulombs)
G
V
GS
(volts)
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