1
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DN3545
BV
DSX
/
R
DS(ON)
I
DSS
BV
DGX
(max)
(min)
TO-92
TO-243AA*
Die
450V
20
200mA
DN3545N3
DN3545N8
DN3545ND
Advanced DMOS Technology
These depletion-mode (normally-on) transistors utilize an ad-
vanced vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transis-
tors and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Ordering Information
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Constant current sources
Power supply circuits
Telecom
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSX
Drain-to-Gate Voltage
BV
DGX
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55C to +150C
Soldering Temperature*
300C
*
Distance of 1.6 mm from case for 10 seconds.
Package Options
Order Number / Package
*
Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
N-Channel Depletion-Mode
Vertical DMOS FETs
Note: See Package Outline section for dimensions.
TO-243AA
(SOT-89)
G
D
S
D
TO-92
S G D
Product marking for TO-243AA:
Where
= 2-week alpha date code
DN5M
2
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
A
= 25
C
C/W
C/W
TO-92
136mA
1.6A
0.74W
125
170
136mA
1.6A
TO-243AA
200mA
300mA
1.6
15
78
200mA
300mA
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Thermal Characteristics
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSX
Drain-to-Source
450
V
V
GS
= -5V, I
D
= 100A
Breakdown Voltage
V
GS(OFF)
Gate-to-Source OFF Voltage
1.5
3.5
V
V
DS
= 25V, I
D
= 10A
V
GS(OFF)
Change in V
GS(OFF)
with Temperature
4.5
mV/C
V
DS
= 25V, I
D
= 10A
I
GSS
Gate Body Leakage Current
100
nA
V
GS
= 20V, V
DS
= 0V
I
D(OFF)
Drain-to-Source Leakage Current
1.0
A
V
GS
= -5V, V
DS
= Max Rating
1.0
mA
V
GS
= -5V, V
DS
= 0.8 Max Rating
T
A
= 125C
I
DSS
Saturated Drain-to-Source Current
200
mA
V
GS
= 0V, V
DS
= 15V
R
DS(ON)
Static Drain-to-Source
20
V
GS
= 0V, I
D
= 150mA
ON-State Resistance
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.1
%/C
V
GS
= 0V, I
D
= 150mA
G
FS
Forward Transconductance
150
m
I
D
= 100mA, V
DS
= 10V
C
ISS
Input Capacitance
360
V
GS
= -5V, V
DS
= 25V
C
OSS
Common Source Output Capacitance
40
pF
f = 1 MHz
C
RSS
Reverse Transfer Capacitance
15
t
d(ON)
Turn-ON Delay Time
20
V
DD
= 25V,
t
r
Rise Time
30
ns
I
D
= 150mA,
t
d(OFF)
Turn-OFF Delay Time
30
R
GEN
= 25,
t
f
Fall Time
40
V
GS
= 0V to -10V
V
SD
Diode Forward Voltage Drop
1.8
V
V
GS
= -5V, I
SD
= 150mA
t
rr
Reverse Recovery Time
800
ns
V
GS
= -5V, I
SD
= 150mA
Notes:
1.
All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2.
All A.C. parameters sample tested.
Electrical Characteristics
(@ 25C unless otherwise specified)
DN3545
3
Typical Application Curves
I D
(Amperes)
VDS (Volts)
VGS = +2.0V
Output Characteristics
-0.5V
-0.8V
-1.0V
-1.5V
Saturation Characteristics
I D
(Amperes)
VDS (Volts)
VGS = +2V
+1.0V
0V
-0.5V
-0.8V
-1.0V
G
FS
(siemens)
ID (Amperes)
Transconductance vs. Drain Current
Power Dissipation vs. Ambient Temperature
PD
(watts)
TA (C)
0V
-1.5V
0
50 100 150 200 250 300 350 400 450
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1.0V
0
2
4
6
8
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0
0.1
0.2
0.3
0.4
0
0.2
0.4
0.6
0.8
VDS = 10V
TA = -55C
TA = 25C
TA = 125C
0
25
50
75
100
125
150
0
0.5
1.0
1.5
2.0
TO-243AA
TO-92
Maximum Rated Safe Operating Area
I D
(Amperes)
VDS (Volts)
1
1000
100
10
TO-243AA (Pulsed)
TA=25C
0.001
0.01
0.1
1.0
TO-243AA (DC)
TO-92 (DC)
TO-92 (Pulsed)
Thermal Response Characteristics
Thermal
Resistance
(normalized)
tp (seconds)
1.0
0.8
0.6
0.4
0.2
0
0.001
10
0.01
0.1
1
TO-243AA
TA = 25C
PD = 1.6W
TO-92
TC = 25C
PD = 1.0W
4
Typical Application Curves
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
12/13/010
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
R
DS(ON)
(ohms)
ID (Amperes)
On Resistance vs. Drain Current
VGS(OFF) and RDS(ON) w/Temperature
V
GS(OFF)
(normalized)
TJ (
C)
R
DS(ON)
(normalized)
Transfer Characteristics
I D
(Amperes)
VGS (Volts)
V
GS
(volts)
-50
0
50
100
150
0.8
0.9
1.0
1.1
1.2
ID = 100A
VGS = -5V
-3
-2
-1
0
1
2
0
0.2
0.4
0.6
0.8
1.0
VDS = 10V
TA = -55C
TA = 125C
TA = 25C
0.5
0.7
0.9
1.1
1.3
1.5
0.4
0.8
1.2
1.6
2.0
2.4
-50
0
50
100
150
RDS(ON) @ 0V, 150mA
VGS(OFF) @ 10A
0
10
20
30
40
0
50
100
150
200
250
300
CRSS
COSS
CISS
VGS = -5V
0
1
2
3
4
5
6
-5
-4
-3
-2
-1
0
1
2
3
ID = 150mA
VDS = 30V
BV
DSS
(Normalized)
TJ (
C)
BV
DSS
Variation with Temperature
Capacitance vs. Drain Source Voltage
C
(picofarads)
VDS (Volts)
0
0.2
0.4
0.6
0.8
0
10
20
30
40
50
Gate Drive Dynamic Characteristics
Q (Nanocoulombs)
G
VGS = 0V
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