1
TC2320
04/23/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
TC2320
N- and P- Channel Enhancement-Mode Dual MOSFET
Features
Low threshold
Low on resistance
Independent, electrically isolated N- and P-channels
Low input capacitance
Fast switching speeds
Free from secondary breakdowns
Low input and output leakage
Application
Medical Ultrasound Transmitters
High voltage pulsers
Amplifiers
Buffers
Piezoelectric transducer drivers
General purpose line drivers
Logic level interfaces
Low Threshold DMOS Technology
The Supertex TC2320TG consist of a high voltage low threshold N-
channel and P-channel MOSFET in an SO-8 package. These low
threshold enhancement-mode (normally-off) transistors utilize an
advanced vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Absolute Maximum Ratings*
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55C to +150C
Soldering Temperature*
300C
*Distance of 1.6mm from case for 10 seconds.
V
B
S
S
D
V
B
/
S
G
D
R
)
N
O
(
S
D
)
x
a
m
(
e
g
a
k
c
a
P
/
r
e
b
m
u
N
r
e
d
r
O
l
e
n
n
a
h
C
-
N
l
e
n
n
a
h
C
-
P
l
e
n
n
a
h
C
-
N
l
e
n
n
a
h
C
-
P
8
-
O
S
V
0
0
2
V
0
0
2
-
0
.
7
2
1
G
T
0
2
3
2
C
T
Package Option
S1
G1
S2
G2
D2
D2
D1
D1
SO-8 Package
(top view)
N-Channel
P-Channel
1
2
3
4
6
5
7
8
2
TC2320
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
200
V
I
D
= 100A, V
GS
= 0V
V
GS(th)
Gate Threshold Voltage
0.6
2.0
V
V
GS
= V
DS
, I
D
= 1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-4.5
mV/C
I
D
= 1mA, V
GS
= V
DS
I
GSS
Gate Body Leakage
100
nA
V
GS
= 20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
1.0
A
V
GS
= 0V, V
DS
= 100V
10.0
A
V
GS
= 0V, V
DS
= Max Rating
1.0
mA
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125C
I
D(ON)
ON-State Drain Current
0.6
A
V
GS
= 4.5V, V
DS
= 25V
1.2
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
Static Drain-to-Source
8.0
V
GS
= 4.5V, I
D
= 150mA
ON-State Resistance
7.0
V
GS
= 10V, I
D
= 1.0A
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.0
%/C
V
GS
= 4.5V, I
D
= 150mA
G
FS
Forward Transconductance
150
m
V
DS
= 25V, I
D
= 200mA
C
ISS
Input Capacitance
110
C
OSS
Common Source Output Capacitance
60
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
C
RSS
Reverse Transfer Capacitance
23
t
d(ON)
Turn-ON Delay Time
20
t
r
Rise Time
15
t
d(OFF)
Turn-OFF Delay Time
25
t
f
Fall Time
25
V
SD
Diode Forward Voltage Drop
1.8
V
I
SD
= 200mA, V
GS
= 0V
t
rr
Reverse Recovery Time
300
ns
I
SD
= 200mA, V
GS
= 0V
Notes:
1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
N-Channel Electrical Characteristics
(@ 25C unless otherwise specified)
V
DD
= 25V
ns
I
D
= 150mA
R
GEN
= 25
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
3
TC2320
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-200
V
V
GS
= 0V, I
D
= -2mA
V
GS(th)
Gate Threshold Voltage
-1.0
-2.4
V
V
GS
= V
DS
, I
D
= -1mA
V
GS(th)
Change in V
GS(th)
with Temperature
4.5
mV/C
V
GS
= V
DS
, I
D
= -1mA
I
GSS
Gate Body Leakage
-100
nA
V
GS
= 20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
-10
A
V
GS
= 0V, V
DS
= Max Rating
-1.0
mA
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125C
I
D(ON)
ON-State Drain Current
-0.25
-0.7
V
GS
= -4.5V, V
DS
= -25V
-0.75
-2.1
V
GS
= -10V, V
DS
= -25V
R
DS(ON)
10
15
V
GS
= -4.5V, I
D
= -100mA
8.0
12
V
GS
= -10V, I
D
= -200mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.7
%/C
V
GS
= -10V, I
D
= -200mA
G
FS
Forward Transconductance
100
250
m
V
DS
= -25V, I
D
= -200mA
C
ISS
Input Capacitance
75
125
C
OSS
Common Source Output Capacitance
20
85
pF
C
RSS
Reverse Transfer Capacitance
10
35
t
d(ON)
Turn-ON Delay Time
10
t
r
Rise Time
15
t
d(OFF)
Turn-OFF Delay Time
20
t
f
Fall Time
15
V
SD
Diode Forward Voltage Drop
-1.8
V
V
GS
= 0V, I
SD
= -0.5A
t
rr
Reverse Recovery Time
300
ns
V
GS
= 0V, I
SD
= -0.5A
Notes:
1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
P-Channel Electrical Characteristics
(@ 25C unless otherwise specified)
A
Static Drain-to-Source
ON-State Resistance
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
ns
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
03/23/02
2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
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