TC7320
A080405
1
Initial Release
Six Pair N- and P-Channel
Enhancement-Mode MOSFET
Features
Six N- and P-channel MOSFET pairs
Integrated gate-source resistor
Integrated gate-source zener diode
Low threshold
Low on-resistance
Low input capacitance
Fast switching speeds
Free from secondary breakdowns
Low input and output leakage
Application
High voltage pulsers
Amplifiers
Buffers
Piezoelectric transducer drivers
General purpose line drivers
Logic level interfaces
Absolute Maximum Ratings*
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Operating and Storage Temperature
-55C to +150C
Soldering Temperature*
300C
*Distance of 1.6mm from case for 10 seconds.
General Description
The Supertex TC7320FG consists of a six pairs of high
voltage low threshold N-channel and P-channel
MOSFETs in a 32-lead LQFP package. All the
MOSFETs have integrated gate-source resistors and
gate-source zener diode clamps which are desired for
high voltage pulser applications. These low threshold
enhancement-mode (normally-off) transistors utilize an
advanced lateral DMOS structure and Supertex's well-
proven silicon-gate manufacturing process. This
combination produces devices with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex's lateral DMOS FETs are ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.
Ordering Information
Order Number / Package
BV
DSS
/ BV
DGS
R
DS(ON)
(max)
32-Lead LQFP
N-Channel
P-Channel
N-Channel
P-Channel
TC7320FG 200V
-200V
20
20
TC7320FG-G* 200V
-200V
20
20
*"Green" certified package
TC7320
A080405
TC7320
A080405
2
N-Channel Electrical Characteristics
(at T
A
=25C unless otherwise specified)
Symbol Parameter
Min Typ Max Units Conditions
BV
DSS
Drain-to-Source
Breakdown Voltage
200 V V
GS
=0V, I
D
=1mA
V
GS(th)
Gate Threshold Voltage
0.4
V
V
GS
=V
DS
, I
D
=1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-4.5
mV/C V
GS
=V
DS
, I
D
=1mA
R
GS
Gate-Source Shunt Resistor
0.9
8.0
K
I
GS
=100A
R
GS
Change in R
GS
with Temperature
TBD
%/C
I
GS
=100A
Vz
GS
Gate-Source Zener Voltage
10
18
V
I
GS
=2.0mA
Vz
GS
Change in Vz
GS
with Temperature
TBD
mV/C I
GS
=2.0mA
10
A
V
GS
=0V, V
DS
=Max Rating
I
DSS
Zero Gate Voltage Drain Current
1.0
mA
V
GS
=0V, V
DS
=0.8 Max
Rating, T
A
=125C
I
D(ON)
On-State Drain Current
1.0
A
V
GS
=10V, V
DS
=25V
R
DS(ON)
Static
Drain-to-Source
ON-State Resistance
20
V
GS
=10V, I
D
=150mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.0
%/C
V
GS
=10V, I
D
=150mA
G
FS
Forward
Transconductance
150 mmho
V
DS
=25V, I
D
=200mA
C
ISS
Input
Capacitance
150
C
OSS
Common Source Output Capacitance
75
C
RSS
Reverse Transfer Capacitance
25
pF
V
GS
=0V, V
DS
=25V
f=1MHz
t
d(ON)
Turn-ON Delay Time
12
t
r
Rise
Time
15
t
d(OFF)
Turn-Off Delay Time
25
t
f
Fall
Time
40
ns
V
DD
=25V,
I
D
=500mA
R
GEN
=25
V
SD
Diode Forward Voltage Drop
1.8
V
V
GS
=0V, I
SD
=0.5A
t
rr
Reverse Recovery Time
300
ns
V
GS
=0V, I
SD
=0.5A
Notes:
1) All DC parameters 100% tested at 25C unless otherwise stated. (Pulsed test: 300s pulse at 2% duty cycle.)
2) All AC parameters sample tested.
N-Channel Switching Waveforms and Test Circuit
R
GEN
Input
Pulse
Generator
V
DD
R
L
D.U.T
OUTPUT
10V
0V
0V
V
DD
t
d(OFF)
Input
Output
t
r
t
f
t
d(ON)
t
(ON)
t
(OFF)
10%
90%
90%
10%
90%
10%
TC7320
A080405
3
P-Channel Electrical Characteristics
(at T
A
=25C unless otherwise specified)
Symbol Parameter
Min Typ Max Units Conditions
BV
DSS
Drain-to-Source
Breakdown Voltage
-200 V V
GS
=0V, I
D
=-1mA
V
GS(th)
Gate Threshold Voltage
-2.3
V
V
GS
=V
DS
, I
D
=-1mA
V
GS(th)
Change in V
GS(th)
with Temperature
4.5
mV/C V
GS
=V
DS
, I
D
=-1mA
R
GS
Gate-Source Shunt Resistor
0.9
8.0
K
I
GS
=-100A
R
GS
Change in R
GS
with Temperature
TBD
%/C
I
GS
=-100A
Vz
GS
Gate-Source Zener Voltage
10
18
V
I
GS
=-2.0mA
V
GS(th)
Change in Vz
GS
with Temperature
TBD
mV/C I
GS
=-2.0mA
-10
A
V
GS
=0V, V
DS
=Max Rating
I
DSS
Zero Gate Voltage Drain Current
-1.0
mA
V
GS
=0V, V
DS
=0.8 Max
Rating, T
A
=125C
I
D(ON)
On-State Drain Current
-1.0
A
V
GS
=-10V, V
DS
=-25V
R
DS(ON)
Static
Drain-to-Source
ON-State Resistance
20
V
GS
=-10V, I
D
=-150mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.0
%/C
V
GS
=-10V, I
D
=-150mA
G
FS
Forward
Transconductance
150 mmho
V
DS
=-25V, I
D
=-200mA
C
ISS
Input
Capacitance
200
C
OSS
Common Source Output Capacitance
100
C
RSS
Reverse Transfer Capacitance
35
pF
V
GS
=0V, V
DS
=-25V
f=1MHz
t
d(ON)
Turn-ON Delay Time
15
t
r
Rise
Time
20
t
d(OFF)
Turn-Off Delay Time
35
t
f
Fall
Time
30
ns
V
DD
=-25V,
I
D
=-500mA
R
GEN
=25
V
SD
Diode Forward Voltage Drop
-1.8
V
V
GS
=0V, I
SD
=-0.5A
t
rr
Reverse Recovery Time
300
ns
V
GS
=0V, I
SD
=-0.5A
Notes:
1) All DC parameters 100% tested at 25C unless otherwise stated. (Pulsed test: 300s pulse at 2% duty cycle.)
2) All AC parameters sample tested.
P-Channel Switching Waveforms and Test Circuit
R
GEN
Input
Pulse
Generator
V
DD
R
L
D.U.T
OUTPUT
0V
-10V
0V
V
DD
t
d(OFF)
Input
Output
t
r
t
f
t
d(ON)
t
(ON)
t
(OFF)
90%
10%
90%
10%
10%
90%
TC7320
A080405
4
Pin Configuration
Pin Function
Pin Function
1 GP1
17
DN6
2 GN1
18
DN3
3 GN2
19
DN5
4 GN3
20
N/C
5 GN6
21
V
NN
2
6 GN5
22
DN2
7 GN4
23
DN4
8 GP4
24
DN1
9 GP5
25
V
NN
1
10 GP6
26 V
PP
1
11 DP6
27 DP1
12 V
PP
2 28
DP2
13 DP5
29 V
PP
3
14 DP4
30 DP3
15 V
SUB
31
GP3
16 V
NN
3 32
GP2
The V
SUB
pin needs to be connected to the most positive supply
32 Lead Low Quad Flat Pack (LQFP)*
Package Outline
All dimensions are in millimeters
*"Green" certified package
7.00
9.00
9.00
7.00
1.50
0.37
0.80
1.00
32 Lead LQFP
Top View
Side View
1
32
17
9
TC7320
A080405
5
Typical I-V Characteristics
N-Channel
P-Channel
Doc# DSFP-TC7320 A080405
GP1
GN1
GP2
GN2
GP3
GN3
V
PP
1
V
NN
1
DP1
DN1
V
PP
2
V
NN
2
DP2
DN2
DP3
DN3
V
NN
3
V
PP
3
GP4
GN4
DP4
DN4
V
NN
1
V
PP
1
GP5
GN5
DP5
DN5
V
NN
2
V
PP
2
GP6
GN6
DP6
DN6
V
NN
3
V
PP
3
V
SUB
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
0
-10
-20
V
DS
(Volts)
I
D
(amperes)
V
GS
= 5.0V
V
GS
= 10V
-5.0
-15
-25
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
DS
(Volts)
I
D
(amperes)
0
10
20
V
GS
= 5.0V
V
GS
= 10V
5.0
15
25
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