Features
- High gain bandwidth product
f
T
= 6 GHz @ V
CE
= 3 V, I
C
= 10 mA
f
T
= 7.5 GHz @ V
CE
= 5 V, I
C
= 20 mA
- High power gain
|S
21
|
2
= 9 dB @ V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
- Low noise figure
NF = 1.4 dB @ V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
Applications
- UHF and VHF wide band amplifier
Page 1 of 6
http://www.tachyonics.co.kr
Dec. 2005.
Rev. 1.0
NPN SILICON RF TRANSISTOR
Preliminary Specification
TBN6301 series
Absolute Maximum Ratings (T
A
= 25
)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
150
I
C
75
mA
mW
Unit
BV
CBO
20
V
Parameter
Symbol
P
tot
150
Ratings
T
stg
-65 ~ 150
V
BV
EBO
3
V
BV
CEO
8
T
j
Caution : Electro Static Discharge sensitive device
SOT323
Pin Configuration (TBN6301U)
1. Base
2. Emitter
3. Collector
Unit in mm
2.1
0.1
1.25
0.05
1.30
0.1
2.0
0.2
0.30
0.1
1
2
3
0.90
0.1
0~
0.1
0.1 Min.
0.15
0.05
Electrical Characteristics (T
A
= 25
)
Page 2 of 6
http://www.tachyonics.co.kr
Dec. 2005.
Rev. 1.0
Preliminary Specification
TBN6301 series
dB
9
7
V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
|S
21
|
2
Insertion Power Gain
GHz
7.5
6
V
CE
= 5 V, I
C
= 20 mA
250
50
V
CE
= 3 V, I
C
= 10 mA
h
FE
DC Current Gain
GHz
6
5
V
CE
= 3 V, I
C
= 10 mA
f
T
Gain Bandwidth Product
dB
9.5
7
V
CE
= 5 V, I
C
= 20 mA, f = 1 GHz
1.8
1.4
V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
NF
Noise Figure
0.5
V
CB
= 15 V, I
E
= 0 mA
I
CBO
Collector Cut-off Current
10
V
CE
= 8 V, I
B
= 0 mA
I
CEO
0.5
V
EB
= 2 V, I
C
= 0 mA
I
EBO
Emitter Cut-off Current
1.1
Typ.
Max.
pF
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
C
re
Reverse Transfer Capacitance
Unit
Min.
Test Conditions
Symbol
Parameter
h
FE
Classification
125 - 250
50 - 160
h
FE
Value
SB1
SB2
Marking
Available Package
Unit in mm
1.6
0.8, 0.8t
SOT523
TBN6301E
1.4
0.8, 0.6t
SOT623F
TBN6301KF
2.0
1.25, 1.0t
SOT323
TBN6301U
2.9
1.3, 1.2t
SOT23
TBN6301S
Dimension
Package
Product
Typical Characteristics ( T
A
= 25
, unless otherwise specified)
Page 3 of 6
http://www.tachyonics.co.kr
Dec. 2005.
Rev. 1.0
Preliminary Specification
TBN6301 series
0
25
50
75
100
125
150
0
50
100
150
200
Collec
t
o
r
P
o
w
e
r Dis
s
ip
ation, P
C
(m
W
)
Ambient Temperature, T
A
(
o
C)
Power Dissipation
vs. Ambient Temperature
DC Current Gain
vs. Collector Current
Collector Current
vs. Base to Emitter Voltage
0
1
2
3
4
5
6
7
0.8
1.0
1.2
1.4
f = 1 MHz
R
e
ver
s
e T
r
ansf
e
r C
apac
itanc
e,
C
re
(p
F
)
Collector to Base Voltage, V
CB
(V)
Reverse Transfer Capacitance
vs. Collector to Base Voltage
0.1
1
10
100
0
50
100
150
200
250
300
350
400
V
CE
= 3 V
DC
Cu
r
r
ent
Gai
n
,
h
FE
Collector Current, I
C
(mA)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
5
10
15
20
25
30
V
CE
= 3 V
Coll
ec
t
o
r Current
,
I
C
(m
A)
Base to Emitter Voltage, V
BE
(V)
Page 4 of 6
http://www.tachyonics.co.kr
March. 2005.
Rev. 1.0
Preliminary Specification
TBN6301 series
Base Current, Collector Current
vs. Base to Emitter Voltage
Gain Bandwidth Product
vs. Collector Current
Insertion Power Gain
vs. Frequency
Collector Current
vs. Collector to Emitter Voltage
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
CE
= 3 V
Ba
s
e
C
u
rr
e
n
t,
I
B
or
Collec
t
or
Curr
ent
,
I
C
(A
)
Base to Emitter Voltage, V
BE
(V)
0
1
2
3
4
5
6
0
10
20
30
40
50
60
70
I
B
Step = 50
A
C
o
llector C
u
rre
nt,
I
C
(m
A)
Collector to Emitter Voltage, V
CE
(V)
0.1
1
0
5
10
15
20
25
30
V
CE
= 3 V
I
C
= 10 mA
Insertio
n P
o
w
e
r
Ga
in
,
|
S
21
|
2
(d
B)
Frequency (GHz)
1
10
100
0
2
4
6
8
10
12
14
Ga
in B
a
n
d
w
i
dth
Pr
od
uct, f
T
(G
H
z
)
Collector Current, I
C
(mA)
V
CE
= 3 V
V
CE
= 5 V
V
CE
= 7 V
Page 5 of 6
http://www.tachyonics.co.kr
March. 2005.
Rev. 1.0
Preliminary Specification
TBN6301 series
Insertion Power Gain
vs. Collector Current
Maximum Available Gain
vs. Collector Current
1
10
100
0
2
4
6
8
10
12
14
16
Inse
rt
io
n
Po
w
e
r
G
a
i
n
, |
S
21
|
2
(d
B)
Collector Current, I
C
(mA)
V
CE
= 3 V
V
CE
= 5 V
V
CE
= 7 V
f = 1 GHz
1
10
100
0
5
10
15
20
M
a
xim
u
m
Available Gain,
M
A
G (dB)
Collector Current, I
C
(mA)
V
CE
= 3 V
V
CE
= 5 V
V
CE
= 7 V
f = 1 GHz
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