THN5601SF
DESCRIPTION
The THN5601SF is a low cost, NPN medium power
SiGe HBT(Hetero-Junction Bipolar Transistor)
encapsulated in a plastic SOT-23F SMD package.
The THN5601SF can be used as a driver device or
an output device, depending on the specific app-
lication.
FEATURES
o 4.8 Volt operation
o P1dB 26dBm @f=900MHz
o Power gain 9.0 dB @f=900MHz
PIN CONFIGURATION
APPLICATIONS
o Hand-help radio equipment in common
emitter class-AB operation in 900MHz
communication band.
MARKING : AM1
MAXIMUM RATINGS
V
CBO
Collector-Base Voltage
Open Emitter
V
CEO
Collector-Emitter Voltage
Open Base
V
EBO
Emitter-Base Voltage
Open Collector
Ic
Collector Current (DC)
P
T
Total Power Dissipation
Ts = 60
T
STG
Storage Temperature
T
J
Operating Junction Temperature
PIN NO
SYMBOL
2
e
20
250
2.5
DESCRIPTION
1
b
base
emitter
3
c
collector
SYMBOL
PARAMETER
CONDITION
VALUE
UNIT
V
8
V
V
mA
800
mW
-65 ~ 150
150
NPN SiGe RF POWER
TRANSISTOR
SOT-23F
Unit : mm
www.tachyonics.co.kr
-1/11-
Sep-2003
Rev 1.1
THN5601SF
THERMAL CHARACTERISTICS
Rth j-s
Ts=70;note1
* Note 1. Ts is temperature at the soldering point of the collector pin.
QUICK REFERENCE DATA
DC CHARACTERISTICS
Tj=25 unless otherwise specified
Vce=4.8V, Icc=200mA, f=500MHz
Vcb=10V, f=1MHz
pF
C
CB
collector capacitance
3
CONDITION
VALUE
Unit
K/W
Mode of Operation
f [MHz]
V
CE
[V]
P
L
[dBm]
G
P
[dB]
C
[%]
SYMBOL
PARAMETER
26
thermal resistance from junction
to soldering point
250
8.0
50
CW, class-AB
900
4.8(Icq=5mA)
SYMBOL
PARAMETER
CONDITION
MIN.
V
BV
CBO
collector-base breakdown voltage
open emitte
20
MAX.
UNIT
V
V
BV
CEO
collector-emitter breakdown voltage
BV
EBO
emitter-base breakdown voltage
open collector
2.5
open base
8
I
S
collector leakage current
10
h
FE
DC current gain
60
200
transition frequency
7
uA
GHz
f
T
www.tachyonics.co.kr
-2/11-
Sep-2003
Rev 1.1
THN5601SF
DC CHARACTERISTICS
Tj=25 unless otherwise specified
Fig 1. DC Current gain v.s Collector current
Fig 2. Collector-base capacitance v.s Collector-
(Vce=4.8V)
base voltage (f=1MHz)
Fig 3. Ft v.s Icc, Ib (Vce=4.8V, f=500MHz)
Fig 4. Vce v.s Ic
40
60
80
100
120
140
160
180
200
1
100
Ic [mA]
hf
e
2
2.5
3
3.5
4
4.5
5
0
5
10
15
20
Vcb [V]
C
-
B C
a
p
a
ci
ta
n
ce [
p
F
]
0
50
100
150
200
250
0
1
2
3
4
5
Vce [V]
Ic
[m
A
]
Ib=400uA
Ib=2.0mA
Ib=1.6mA
Ib=1.2mA
Ib=800uA
0
1
2
3
4
5
6
7
8
9
10
0
50
100
150
200
250
Ic [mA]
Ft
[
G
Hz]
www.tachyonics.co.kr
-3/11-
Sep-2003
Rev 1.1
THN5601SF
APPLICATION INFORMATION (I)
RF performance at Ts 60 in common emitter test circuit
Note2: When the RF output Power Auto Tunning System is Used
Vce = 4.8V, Icq = 5mA, P
L
= 26dBm, 900MHz
Vce = 4.8V, Icq = 5mA, P
L
= 26dBm, 900MHz
Fig 5. Pin vs Gp, C (Vce=4.8V, Icq=5mA, 900MHz)
Fig 6. Pin vs Pout, Gp (Vce=4.8V, Icq=5mA, 900MHz)
Fig 7. Input impedence as function of frequency
Fig 8. Output impedence as function of frequency
C
[%]
CW, class-AB
900
4.8 (Icq=5mA)
26
Typ 9.0
50
Mode of Operation
f [MHz]
P
L
[dBm]
G
P
[dB]
V
CE
[V]
Zsource
=11.13-j1.49
Zload
=11.50-j4.98
1
3
5
7
9
11
8
12
16
20
24
28
32
P
OUT
[dBm]
Gp [
d
B
]
0%
20%
40%
60%
80%
100%
C [%
]
0
5
10
15
20
25
30
35
0
5
10
15
20
25
Pin [dBm]
Po
ut [
d
B
m
]
6
7
8
9
10
11
12
13
Gp [
d
B
]
www.tachyonics.co.kr
-4/11-
Sep-2003
Rev 1.1
THN5601SF
APPLICATION INFORMATION (II)
RF performance at Ts 60 in common emitter test circuit
Note3: When the RF output Power Auto Tunning System is Used
Vce = 4.8V, Icq = 95mA, P
L
= 26dBm, 900MHz
Vce = 4.8V, Icq = 95mA, P
L
= 26dBm, 900MHz
4.8 (Icq=95mA)
Mode of Operation
f [MHz]
V
CE
[V]
P
L
[dBm]
G
P
[dB]
C
[%]
26
Fig 11. Input impedence as function of frequency
Fig 12. Output impedence as function of frequency
Typ 9.5
40
Fig 9. Pin vs Gp, C (Vce=4.8V, Icq=95mA, 900MHz) Fig 10. Pin vs Gp, C (Vce=4.8V, Icq=95mA, 900MHz)
CW, class-A
900
Zsource
=11.50-j4.98
Zload
=11.20-j0.32
2
4
6
8
10
12
8
12
16
20
24
28
32
P
OUT
[dBm]
Gp [
d
B
]
0%
20%
40%
60%
80%
100%
C [%
]
0
4
8
12
16
20
24
28
32
0
4
8
12
16
20
24
Pin [dBm]
Po
ut [
d
B
m
]
7
8
9
10
11
12
13
14
15
Gp [
d
B
]
www.tachyonics.co.kr
-5/11-
Sep-2003
Rev 1.1
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