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Электронный компонент: P4802AC

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Two-chip SIDACtor Device
http://www.teccor.com
2 - 30
2003 Teccor Electronics
+1 972-580-7777
SIDACtor
Data Book and Design Guide
Two-chip SIDACtor Device
The two-chip modified TO-220 SIDACtor solid state device protects telecommunication
equipment in applications that reference Tip and Ring to earth ground but do not require
balanced protection.
SIDACtor devices are used to enable equipment to meet various regulatory requirements
including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly
known as FCC Part 68).
* For individual "AA", "AB", and "AC" surge ratings, see table below.
General Notes:
All measurements are made at an ambient temperature of 25 C. I
PP
applies to -40 C through +85 C temperature range.
I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
V
DRM
is measured at I
DRM.
V
S
is measured at 100 V/s.
Special voltage (V
S
and V
DRM
) and holding current (I
H
) requirements are available upon request.
Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for "AA" product. "AB"
and "AC" capacitance is approximately 2x the listed value.
Electrical Parameters
Part
Number *
V
DRM
Volts
V
S
Volts
V
DRM
Volts
V
S
Volts
V
T
Volts
I
DRM
Amps
I
S
mAmps
I
T
Amps
I
H
mAmps
C
O
pF
Pins 1-2, 3-2
Pins 1-3
P0602A_
25
40
50
80
4
5
800
2.2
50
110
P1402A_
58
77
116
154
4
5
800
2.2
150
50
P1602A_
65
95
130
190
4
5
800
2.2
150
50
P2202A_
90
130
180
260
4
5
800
2.2
150
40
P2702A_
120
160
240
320
4
5
800
2.2
150
40
P3002A_
140
180
280
360
4
5
800
2.2
150
40
P3602A_
170
220
340
440
4
5
800
2.2
150
40
P4202A_
190
250
380
500
4
5
800
2.2
150
30
P4802A_
220
300
440
600
4
5
800
2.2
150
30
P6002A_
275
350
550
700
4
5
800
2.2
150
30
Surge Ratings
Series
I
PP
2x10 s
Amps
I
PP
8x20 s
Amps
I
PP
10x160 s
Amps
I
PP
10x560 s
Amps
I
PP
10x1000 s
Amps
I
TSM
60 Hz
Amps
di/dt
Amps/s
A
150
150
90
50
45
20
500
B
250
250
150
100
80
30
500
C
500
400
200
150
100
50
500
1
2
3
(T)
(R)
(G)
Two-chip SIDACtor Device
2003 Teccor Electronics
2 - 31
http://www.teccor.com
SIDACtor
Data Book and Design Guide
+1 972-580-7777
D
a
ta
S
h
e
e
ts
Thermal Considerations
Package
Symbol
Parameter
Value
Unit
Modified
TO-220
T
J
Operating Junction Temperature Range
-40 to +150
C
T
S
Storage Temperature Range
-65 to +150
C
R
JA
Thermal Resistance: Junction to Ambient
50
C/W
PIN 1
PIN 2
PIN 3
I
H
I
T
I
S
I
DRM
V
DRM
V
T
+V
-V
+I
-I
V
S
I
H
I
T
I
S
I
DRM
V
DRM
V
T
+V
-V
+I
-I
V
S
V-I Characteristics
50
100
0
t
r
t
d
0
Peak
Value
Half Value
t Time (s)
I
PP
P
e
ak Pulse Current %I
PP
t
r
= rise time to peak value
t
d
= decay time to half value
Waveform = t
r
x t
d
t
r
x t
d
Pulse Wave-form
-8
-40 -20
0
20
40 60
80 100 120 140 160
-6
-4
0
2
4
6
8
10
12
14
Junction Temperature (T
J
) C
P
ercent of
V
S
Change %
25 C
Normalized V
S
Change versus Junction Temperature
0.4
-40 -20
0
20 40 60 80 100 120 140 160
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Case Temperature (T
C
) C
Ratio of
I
H
I
H
(T
C
= 25 C)
25 C
Normalized DC Holding Current versus Case Temperature