Document Outline
- Return to Contents
- List of Figures
- 1. Inverting Driver Switching Time
- 2. Noninverting Driver Switching Time
- Features
- Ordering Information
- Functional Block Diagram
- General Description
- Absolute Maximum Ratings*
- Pin Configurations
- Electrical Characteristics: TA = +25C with 4.5V VDD 18V, unless otherwise specified.
- Typical Characteristics
- Supply Current Characteristics (Load on Single Output Only)
4-237
TELCOM SEMICONDUCTOR, INC.
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ORDERING INFORMATION
Temperature
Part No.
Package
Range
TC4423COE
16-Pin SOIC (Wide)
0
C to +70
C
TC4423CPA
8-Pin Plastic DIP
0
C to +70
C
TC4423EOE
16-Pin SOIC (Wide)
40
C to +85
C
TC4423EPA
8-Pin Plastic DIP
40
C to +85
C
TC4423MJA
8-Pin CerDIP
55
C to +125
C
TC4424COE
16-Pin SOIC (Wide)
0
C to +70
C
TC4424CPA
8-Pin Plastic DIP
0
C to +70
C
TC4424EOE
16-Pin SO Wide
40
C to +85
C
FEATURES
s
High Peak Output Current .................................. 3A
s
Wide Operating Range .......................... 4.5V to 18V
s
High Capacitive Load
Drive Capability ......................... 1800 pF in 25nsec
s
Short Delay Times ............................. < 40nsec Typ
s
Matched Rise/Fall Times
s
Low Supply Current
-- With Logic "1" Input ................................ 3.5 mA
-- With Logic "0" Input ................................ 350
A
s
Low Output Impedance ............................. 3.5
Typ
s
Latch-Up Protected . Will Withstand 1.5A Reverse
Current
s
Logic Input Will Withstand Negative Swing Up
to 5V
s
ESD Protected .................................................... 4 kV
s
Pinouts Same as TC1426/27/28; TC4426/27/28
GENERAL DESCRIPTION
The TC4423/4424/4425 are higher output current ver-
sions of the new TC4426/4427/4428 buffer/drivers, which,
in turn, are improved versions of the earlier TC426/427/428
series. All three families are pin-compatible. The TC4423/
4424/4425 drivers are capable of giving reliable service in
far more demanding electrical environments than their ante-
cedents.
Although primarily intended for driving power MOSFETs,
the TC4423/4424/4425 drivers are equally well-suited to
driving any other load (capacitive, resistive, or inductive)
which requires a low impedance driver capable of high peak
currents and fast switching times. For example, heavily
loaded clock lines, coaxial cables, or piezoelectric transduc-
ers can all be driven from the TC4423/4424/4425. The only
known limitation on loading is the total power dissipated in
the driver must be kept within the maximum power dissipa-
tion limits of the package.
Temperature
Part No
Package
Range
TC4424EPA
8-Pin Plastic DIP
40
C to +85
C
TC4424MJA
8-Pin CerDIP
55
C to +125
C
TC4425COE
16-Pin SO Wide
0
C to +70
C
TC4425CPA
8-Pin Plastic DIP
0
C to +70
C
TC4425EOE
16-Pin SO Wide
40
C to +85
C
TC4425EPA
8-Pin Plastic DIP
40
C to +85
C
TC4425MJA
8-Pin CerDIP
55
C to +125
C
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
FUNCTIONAL BLOCK DIAGRAM
EFFECTIVE
INPUT C = 20 pF
(EACH INPUT)
TC4423
TC4424
TC4425
DUAL INVERTING
DUAL NONINVERTING
ONE INV., ONE NONINV.
OUTPUT
INPUT
GND
VDD
300 mV
4.7V
NOTES:
1. TC4425 has one inverting and one noninverting driver.
2. Ground any unused driver input.
INVERTING
NONINVERTING
TC4423/4/5-6 10/21/96
4-238
TELCOM SEMICONDUCTOR, INC.
3A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
PDIP R
J-C
..................................................... 45
C/W
SOIC R
J-A
................................................... 155
C/W
SOIC R
J-C
..................................................... 75
C/W
Operating Temperature Range
C Version ............................................... 0
C to +70
C
I Version ............................................ - 25
C to +85
C
E Version ........................................... - 40
C to +85
C
M Version ........................................ - 55
C to +125
C
Package Power Dissipation (T
A
70
C)
Plastic DIP ...................................................... 730mW
CerDIP ............................................................ 800mW
SOIC ............................................................... 470mW
ELECTRICAL CHARACTERISTICS:
T
A
= +25
C with 4.5V
V
DD
18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
OH
Logic 1 High Input Voltage
2.4
--
--
V
V
IL
Logic 0 Low Input Voltage
--
--
0.8
V
I
IN
Input Current
0V
V
IN
V
DD
1
--
1
A
Output
V
OH
High Output Voltage
V
DD
0.025
--
--
V
V
OL
Low Output Voltage
--
--
0.025
V
R
O
Output Resistance, High
I
OUT
= 10 mA, V
DD
= 18V
--
2.8
5
R
O
Output Resistance, Low
I
OUT
= 10 mA, V
DD
= 18V
--
3.5
5
I
PK
Peak Output Current
--
3
--
A
I
REV
Latch-Up Protection
Duty Cycle
2%
1.5
--
--
A
Withstand Reverse Current
t
300
sec
Switching Time (Note 1)
t
R
Rise Time
Figure 1, C
L
= 1800 pF
--
23
35
nsec
t
F
Fall Time
Figure 1, C
L
= 1800 pF
--
25
35
nsec
t
D1
Delay Time
Figure 1, C
L
= 1800 pF
--
33
75
nsec
t
D2
Delay Time
Figure 1, C
L
= 1800 pF
--
38
75
nsec
Power Supply
I
S
Power Supply Current
V
IN
= 3V (Both Inputs)
--
1.5
2.5
mA
V
IN
= 0V (Both Inputs)
--
0.15
0.25
mA
PIN CONFIGURATIONS
8-Pin DIP
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
VDD
NC
OUT A
NC
IN A
IN B
VDD
NC
GND
GND
NC
OUT A
VDD
OUT B
OUT B
NC
NC
OUT A
DD
OUT A
DD
OUT B
OUT B
NC
NC
OUT A
VDD
OUT A
VDD
OUT B
OUT B
NC
4423
4424
4425
NC
OUT A
OUT B
VDD
NC
OUT A
OUT B
VDD
4423
4424
4425
V
V
16-Pin SO Wide
1
2
3
4
5
6
7
8
16
13
12
11
10
9
15
14
NC
NC = NO CONNECTION
NOTE: Duplicate pins must both be connected for proper operation.
TC4423
TC4424
TC4425
TC4423
TC4424
TC4425
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B ...... V
DD
+ 0.3V to GND 5.0V
Maximum Chip Temperature ................................. +150
C
Storage Temperature Range ................ 65
C to +150
C
Lead Temperature (Soldering, 10 sec) ................. +300
C
Package Thermal Resistance
CerDIP R
J-A
................................................ 150
C/W
CerDIP R
J-C
.................................................. 55
C/W
PDIP R
J-A
................................................... 125
C/W
4-239
TELCOM SEMICONDUCTOR, INC.
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3A DUAL HIGH-SPEED
POWER --MOSFET DRIVERS
TC4423
TC4424
TC4425
Figure 1. Inverting Driver Switching Time
Figure 2. Noninverting Driver Switching Time
OUTPUT
INPUT
0.1
F CERAMIC
+5V
INPUT
10%
90%
10%
90%
10%
90%
16V
OUTPUT
tD1
tF
C = 1800pF
L
1
F
WIMA
MKS-2
VDD = 16V
0V
0V
TC4423
(1/2 TC4425)
Test Circuit
1
2
tD2
tR
INPUT: 100 kHz,
square wave,
tRISE = tFALL
10 nsec
90%
10%
10%
10%
tD1
+5V
INPUT
16V
OUTPUT
0V
0V
90%
90%
OUTPUT
INPUT
0.1
F CERAMIC
C = 1800pF
L
1
F
WIMA
MKS-2
VDD = 16V
TC4424
(1/2 TC4425)
Test Circuit
1
2
tD2
tR
tF
INPUT: 100 kHz,
square wave,
tRISE = tFALL
10 nsec
ELECTRICAL CHARACTERISTICS (Cont.):
Over operating temperature range with 4.5V
V
DD
18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
Logic 1 High Input Voltage
2.4
--
--
V
V
IL
Logic 0 Low Input Voltage
--
--
0.8
V
I
IN
Input Current
0V
V
IN
V
DD
10
--
10
A
Output
V
OH
High Output Voltage
V
DD
0.025
--
--
V
V
OL
Low Output Voltage
--
--
0.025
V
R
O
Output Resistance, High
I
OUT
= 10 mA, V
DD
= 18V
--
3.7
8
R
O
Output Resistance, Low
I
OUT
= 10 mA, V
DD
= 18V
--
4.3
8
I
PK
Peak Output Current
--
3
--
A
I
REV
Latch-Up Protection
Duty Cycle
2%
1.5
--
--
A
Withstand Reverse Current
t
300
sec
Switching Time (Note 1)
t
R
Rise Time
Figure 1, C
L
= 1800 pF
--
28
60
nsec
t
F
Fall Time
Figure 1, C
L
= 1800 pF
--
32
60
nsec
t
D1
Delay Time
Figure 1, C
L
= 1800 pF
--
32
100
nsec
t
D2
Delay Time
Figure 1, C
L
= 1800 pF
--
38
100
nsec
Power Supply
I
S
Power Supply Current
V
IN
= 3V (Both Inputs)
--
2
3.5
mA
V
IN
= 0V (Both Inputs)
--
0.2
0.3
NOTE: 1. Switching times guaranteed by design.
4-240
TELCOM SEMICONDUCTOR, INC.
3A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
TYPICAL CHARACTERISTICS
4
6
8
10
12
14
16
18
VDD
2200 pF
100
1000
10,000
C (pF)
LOAD
5V
10V
15V
t RISE
(nsec)
100
80
60
40
20
0
100
80
60
40
20
0
100
1000
10,000
5V
10V
15V
100
80
60
40
20
0
CLOAD (pF)
1000 pF
3300 pF
1500 pF
Rise TIme vs. Capacitive Load
Rise Time vs. Supply Voltage
Fall TIme vs. Capacitive Load
TIME (nsec)
Rise and Fall Times vs. Temperature
TA (
C)
Propagation Delay vs. Input Amplitude
32
30
28
26
24
22
20
18
55 35
5
25
45
65
85
105 125
15
100
80
60
40
20
DELAY TIME (nsec)
INPUT (V)
V = 10V
DD
C = 2200 pF
LOAD
t RISE
t FALL
t RISE
C = 2200 pF
LOAD
0
1
2
3
4
5
6
7
8
9
10 11 12
t D2
t D1
t FALL
t FALL
(nsec)
4
6
8
10
12
14
16
18
Fall Time vs. Supply Voltage
100
80
60
40
20
0
VDD
1000 pF
1500 pF
4700 pF
470 pF
4700 pF
3300 pF
2200 pF
470 pF
t FALL
(nsec)
t RISE
(nsec)
4-241
TELCOM SEMICONDUCTOR, INC.
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3A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
TYPICAL CHARACTERISTICS (Cont.)
55 35 15
5
25
45
65
85
105 125
Propagation Delay Time vs. Supply Voltage
50
45
40
35
30
25
20
Quiescent Current vs. Temperature
1
0.1
0.01
4
6
8
10
12
14
16
18
DELAY TIME (nsec)
Delay Time vs. Temperature
50
45
40
35
30
25
20
TA (
C)
DELAY TIME (nsec)
DD
V
55 35 15
5
25
45
65
85
105 125
4
6
8
10
12
14
16
18
TA (
C)
I QUIESCENT
(mA)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Quiescent Current vs. Supply Voltage
DD
V
Output Resistance (Output High)
vs. Supply Voltage
14
12
10
8
6
4
2
4
6
8
10
12
14
16
18
DD
V
R
DS(ON)
(
)
Output Resistance (Output Low)
vs. Supply Voltage
14
12
10
8
6
4
2
4
6
8
10
12
14
16
18
DD
V
C = 2200 pF
LOAD
C = 2200 pF
LOAD
tD2
tD2
tD2
tD2
BOTH INPUTS = 1
INPUTS = 1
INPUTS = 0
WORST CASE @ TJ = +150
C
TYP @ TA = +25
C
TYP @ TA = +25
C
WORST CASE @ TJ = +150
C
TA = +25
C
BOTH INPUTS = 0
I QUIESCENT
(mA)
R
DS(ON)
(
)
4-242
TELCOM SEMICONDUCTOR, INC.
SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)
10,000 pF
10,000 pF
Supply Current vs. Capacitive Load
100
1000
10,000
I SUPPLY
(mA)
60
50
40
30
20
10
0
Supply Current vs. Capacitive Load
100
1000
10,000
Supply Current vs. Capacitive Load
100
1000
10,000
Supply Current vs. Frequency
FREQUENCY (kHz)
Supply Current vs. Frequency
10
100
1000
FREQUENCY (kHz)
90
80
70
60
50
40
30
20
10
0
Supply Current vs. Frequency
10
100
1000
FREQUENCY (kHz)
355 kHz
200 kHz
35.5 kHz
634 kHz
2 MHz
100 pF
1000 pF
4700 pF
100 pF
V = 12V
DD
V = 12V
DD
V = 6V
DD
CLOAD (pF)
V = 18V
DD
60
50
40
30
20
10
0
10
100
1000
112.5 kHz
20 kHz
3300 pF
100 pF
1000 pF
63.4 kHz
DD
V = 18V
3300 pF
1000 pF
1.125 MHz
634 kHz
355 kHz
200 kHz
112.5 kHz
63.4 kHz
20 kHz
90
80
70
60
50
40
30
20
10
0
634 kHz
355 kHz
112.5 kHz
20 kHz
2 MHz
1.125 MHz
3.55 MHz
120
100
80
60
40
20
0
10,000 pF
DD
V = 6V
2200 pF
I SUPPLY
(mA)
I SUPPLY
(mA)
I SUPPLY
(mA)
I SUPPLY
(mA)
I SUPPLY
(mA)
120
100
80
60
40
20
0
CLOAD (pF)
CLOAD (pF)
3A DUAL HIGH-SPEED
MOSFET DRIVERS
TC4423
TC4424
TC4425
4-243
TELCOM SEMICONDUCTOR, INC.
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200
0
400
600
800
1000
1200
1400
0
20
40
60
80
100
120
140
AMBIENT TEMPERATURE (
C)
MAX. POWER (mW)
8 Pin DIP
16 Pin SOIC
8 Pin CerDIP
Thermal Derating Curves
TC4423 Crossover Energy
109
8
108
A sec
0
2
4
6
8
10
12
14
16
18
6
4
2
8
6
4
2
1010
VIN
NOTE: The values on this graph
represent the loss seen by both drivers in
a package during one complete cycle. For
a single driver, divide the stated values by
2. For a single transition of a single driver,
divide the stated value by 4.
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings (See page 2) may
cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specifications is not
implied. Exposure to Absolute Maximum Rating Conditions for extended
periods may affect device reliability.
3A DUAL HIGH-SPEED
MOSFET DRIVERS
TC4423
TC4424
TC4425
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