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Электронный компонент: TC4626EOE

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4-271
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
TC4626
TC4627
POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
FEATURES
s
Power driver with on Board Voltage Booster
s
Low IDD ......................................................... < 4 mA
s
Small Package ........................................ 8-Pin PDIP
s
Under-Voltage Circuitry
s
Fast Rise-Fall Time .................. < 40nsec @ 1000pF
s
Below-Rail Input Protection
APPLICATIONS
s
Raises 5V to drive higher-Vgs (ON) MOSFETs
s
Eliminates one system power supply
GENERAL DESCRIPTION
The TC4626/4627 are single CMOS high speed drivers
with an on-board voltage boost circuit. These parts work with
an input supply voltage from 4 to 6 volts. The internal voltage
booster will produce a V
BOOST
potential up to 12 volts above
V
IN
. This V
BOOST
is not regulated, so its voltage is dependent
on the input V
DD
voltage and output drive loading require-
ments. An internal undervoltage lockout circuit keeps the
output in a low state when V
BOOST
drops below 7.8 volts.
Output is enabled when V
BOOST
is above 11.3 volts.
PIN CONFIGURATIONS
1
2
3
4
5
6
7
8
IN
OUT
C1+
C2
GND
1
2
3
4
13
14
15
16
VBOOST
NC
IN
C1
NC
C1+
NC
NC
VDD
C1
VDD
5
6
7
8
9
10
11
12
C2
NC
NC
GND
NC
VBOOST
NC
OUT
TC4626
TC4627
TC4626
TC4627
NOTE: Pin numbers correspond to 8-pin package
ORDERING INFORMATION
Part No.
Package
Temp. Range
TC4626COE
16-Pin SOIC (Wide)
55
C to +125
C
TC4626CPA
8-Pin Plastic DIP
40
C to +85
C
TC4626EOE
16-Pin SOIC (Wide)
40
C to +85
C
TC4626EPA
8-Pin Plastic DIP
0
C to +70
C
TC4626MJA
8-Pin CerDIP
0
C to +70
C
TC4627COE
16-Pin SOIC (Wide)
55
C to +125
C
TC4627CPA
8-Pin Plastic DIP
40
C to +85
C
TC4627EOE
16-Pin SOIC (Wide)
40
C to +85
C
TC4627EPA
8-Pin Plastic DIP
0
C to +70
C
TC4627MJA
8-Pin CerDIP
0
C to +70
C
VOLTAGE
BOOSTER
CLOCK
C1+
C1-
C2
IN
GND
EXT
OUTPUT
VBOOST
EXT
V = 2 x VDD
VDD
1
2
3
8
7
4
6
5
C3
NON-
INVERTING
4627
INVERTING
4626
(UNREGULATED 3 x VDD)
UV LOCK
C2
EXT
C1
+
+
+
FUNCTIONAL BLOCK DIAGRAM
TC4626/7-7 10/21/96
8-Pin Plastic DIP
/CerDIP
16-Pin SOIC (Wide)
4-272
TELCOM SEMICONDUCTOR, INC.
TC4626
TC4627
POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
ABSOLUTE MAXIMUM RATINGS
Package Power Dissipation (T
A
70
C)
PDIP ................................................................. 730mW
CerDIP .............................................................. 800mW
SOIC ................................................................. 760mW
Derating Factor
PDIP ....................................... 5.6 mW/
C Above 36
C
CerDIP ........................................................ 6.0 mW/
C
Supply Voltage ........................................................... 6.2V
Input Voltage, Any Terminal ...... V
S
+ 0.3V to GND 0.3V
Operating Temperature : M Version ...... 55
C to +125
C
E Version ......... 40
C to +85
C
C Version .............. 0
C to +70
C
Maximum Chip Temperature ................................. +150
C
Storage Temperature ............................ 65
C to +150
C
Lead Temperature (10 sec) ................................... +300
C
ELECTRICAL CHARACTERISTICS:
T
A
= 25
C VDD = 5V C1 = C2 = C3 10
F unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Driver Input
V
IH
Logic 1, Input Voltage
2.4
--
--
V
V
IL
Logic 0, Input Voltage
--
--
0.8
V
I
IN
Input Current
0V
V
IN
V
DRIVE
1
--
1
A
Driver Output
V
OH
High Output Voltage
V
BOOST
0.025
--
--
V
V
OL
Low Output Voltage
--
--
0.025
V
R
O
Output Resistance, High
I
OUT
= 10 mA, V
DD
= 5V
--
10
15
R
O
Output Resistance, Low
I
OUT
= 10 mA, V
DD
= 5V
--
8
10
I
PK
Peak Output Current
--
1.5
--
A
Switching Time
t
R
Rise Time
Test Figure 1,2
--
33
40
nsec
t
F
Fall Time
Test Figure 1,2
--
27
35
nsec
t
D1
Delay Time
Test Figure 1,2
--
35
45
nsec
t
D2
Delay Time
Test Figure 1,2
--
45
55
nsec
F
MAX
Maximum Switching Frequency
Test Figure 1
1.0
--
--
MHz
V
DD
= 5V, V
BOOST
> 8.5V
Voltage Booster
R
3
Voltage Tripler Output
I
L
= 10 mA, V
DD
= 5V
--
300
400
Source Resistance
R
2
Voltage Doubler Output
--
120
200
Source Resistance
F
OSC
Oscillator Frequency
12
--
28
kHz
V
OSC
Oscillator Amplitude
R
LOAD
= 10k
4.5
--
10
V
Measured at C1-
UV
Undervoltage Threshold
7.0
7.8
8.5
V
@ V
BOOST
V
START
Start Up Voltage
10.5
11.3
12
V
@ V
BOOST
V
BOOST
@V
DD
= 5V
No Load
14.6
--
--
V
Power Supply
I
DD
Power Supply Current
V
IN
= LOW or HIGH
--
--
2.5
mA
V
DD
Supply Voltage
4.0
--
6.0
V
4-273
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Driver Input
V
IH
Logic 1, Input Voltage
2.4
--
--
V
V
IL
Logic 0, Input Voltage
--
--
0.8
V
I
IN
Input Current
0V
V
IN
V
BOOST
10
--
10
A
Driver Output
V
OH
High Output Voltage
V
DRIVE
0.025
--
--
V
V
OL
Low Output Voltage
--
--
0.025
V
R
O
Output Resistance, High
I
OUT
= 10 mA, V
DD
= 5V
C & E Version (T
A
= 70
C or 85
C)
--
15
20
M Version (T
A
= 125
C)
--
15
25
R
O
Output Resistance, Low
I
OUT
= 10 mA, V
DD
= 5V
C & E Version (T
A
= 70
C or 85
C)
--
10
13
M Version (T
A
= 125
C)
--
10
15
I
PK
Peak Output Current
--
1.5
--
A
Switching Time
t
R
Rise Time
Test Figure 1,2
--
--
55
nsec
t
F
Fall Time
Test Figure 1,2
--
--
50
nsec
t
D1
Delay Time
Test Figure 1,2
--
--
60
nsec
t
D2
Delay Time
Test Figure 1,2
--
--
70
nsec
F
MAX
Maximum Switching Frequency Test Figure 1
750
--
--
kHz
V
DD
= 5V, V
BOOST
> 8.5V
Voltage Booster
R
3
Voltage Boost Output
I
L
= 10 mA, V
DD
= 5V
--
400
500
Source Resistance
R
2
Voltage Doubler Output
--
170
300
Source Resistance
F
OSC
Oscillator Frequency
5
--
50
kHz
V
OSC
Oscillator Amplitude
R
LOAD
= 10k
4.5
--
10
V
Measured at C1-
UV
Undervoltage Threshold
7.0
7.8
8.5
V
@ V
BOOST
V
START
Start Up Voltage
10.5
11.3
12
V
@ V
BOOST
V
BOOST
@V
DD
= 5V
No Load
14.6
--
--
V
Power Supply
I
DD
Power Supply Current
V
IN
= LOW or HIGH
--
--
4
mA
V
DD
Supply Voltage
4.0
--
6.0
V
POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
TC4626
TC4627
ELECTRICAL CHARACTERISTICS:
T
A
= Over Operating Temperature Range V
DD
= 5V C1 = C2 = C3 10
F
unless otherwise specified.
4-274
TELCOM SEMICONDUCTOR, INC.
TC4626
TC4627
POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
Figure 1. Inverting Driver Switching Time
* 100kHz SQUARE WAVE, t
r
= t
f
< 10nsec
SWITCHING TIME TEST CIRCUITS
Figure 2. Non-Inverting Driver Switching Time
* 100kHz SQUARE WAVE, t
r
= t
f
< 10nsec
OUTPUT
INPUT
10 F
VBOOST
+5V
INPUT*
10%
90%
10%
90%
10%
90%
OUTPUT
tD1
t F
t
tD2
CL = 1000 pF
C3
0V
0V
TC4626
R
10 F
C1+
C1-
C1
10 F
C2
VDD = 5V
C2
VBOOST
3
8
7
1
6
5
2
4
Ceramic
0.1 F
90%
10%
10%
10%
tD1
tR
tD2
tF
90%
+5V
INPUT*
OUTPUT
0V
0V
90%
OUTPUT
INPUT
10 F
VBOOST
CL = 1000 pF
C3
TC4627
10 F
C1+
C1-
C1
10 F
C2
VDD = 5V
VBOOST
C2
3
8
7
1
6
5
2
4
0.1F
Ceramic
4-275
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
TC4626
TC4627
The voltage booster is an unregulated voltage tripler
circuit. The tripler consists of three sets of internal switches
and three external capacitors. S1a and S1b charge capaci-
tor C1 to V
DD
potential. S2a and S2b add C1 potential to V
DD
input to charge C2 to 2 x V
DD
. S3a and S3b add C1 potential
to C2 to charge C3 to 3 x V
DD
. The position of the switches
is controlled by the internal 4 phase clock.
C3
C2
6
3
8
2
C1
(4 To 6V)
S1a
S1b
GND
4
S2a
S2b
2 x VDD
3 x VDD, VBOOST
6
S3b
S3a
1
VDD
Voltage Booster
Position of Switches
PIN 2
VOLTAGE
PIN 1
VOLTAGE
3 x VDD
2 x VDD
VDD
2 x VDD
VDD
0
ON
OFF
S1
ON
OFF
S2
ON
OFF
S3
BOOSTER FUNCTION
Pin 1 & 2 Waveforms