ChipFind - документация

Электронный компонент: DH71020-53

Скачать:  PDF   ZIP

Document Outline

12-1
Vol. 1
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
MICROWAVE SILICON COMPONENTS
Contents
CONTENTS
CONTENTS
INTRODUCTION / SYMBOLS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12-2
SILICON PIN DIODES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12-4
SCHOTTKY DIODES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12-28
TUNING VARACTORS DIODES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12-31
POWER GENERATION DIODES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12-40
CASE STYLES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12-47
MOS CAPACITORS: Please consult page 7-39 of this catalog
MICROWAVE SILICON COMPONENTS
PAGE
Spirit o
f Ne
w
Techn
ology
All specifications cont
ained in that cat
alog are subject to c
hange without notice.
12-2
Vol. 1
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
MICROWAVE SILICON COMPONENTS
Introduction
This part of the Microwave section presents TEMEX product lines including:
receiving diodes
control diodes
tuning varactors
multiplier varactors
step recovery diodes
high voltage PIN diodes
TEMEX products are available in a complete assortment of packages including:
chips
standard
surface mount ceramic and plastic
non magnetic
custom
IN-HOUSE PRODUCTION
The silicon slice is the in-house starting point of TEMEX product manufacturing. From the virgin wafer,
TEMEX performs all functions, including:
epitaxy
diffusion
photomasking
metallization
passivation
dicing
packaging
control and burn-in
TEMEX uses and controls ten separate silicon-related technologies, e.g. all Schottky metallurgies, all
junction passivations, and all mesa operations.
INTRODUCTION
MICROWAVE SILICON COMPONENTS
Symbols
12-3
Vol. 1
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
Cb
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Case Capacitance
Cj
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Capacitance
C
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Capacitance
C
X
/Cy
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tuning Ratio
f
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Frequency
F
CO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cut-off Frequency
F
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency Input
F
IF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Intermediate Frequency
F
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Frequency
F
oper
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating frequency
I
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Continuous Current
I
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Continuous Current
I
RP
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Pulse Current
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Conversion Loss
N/A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Not Applicable
NF
SSB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Sideband Noise Figure
NF
IF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure of Intermediate Frequency
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gold Contact Diameter
P
CW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CW Power Capability
P
diss
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation
P
in
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Input
P
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Limiting Threshold
P
LO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Local Oscillator Power
P
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Power
P
RF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Power
Q
-
X
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure of Merit
R
SF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Series Resistance
R
th
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance
R
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Video Resistance
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Minority Carrier Lifetime
T
CR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Switching Time
T
j
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature
t
SO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Snap-off Time
T
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tangential Sensitivity
V
BR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Breakdown Voltage
V
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Continuous Voltage
V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Applicable Voltage (RF + bias)
VSWR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage Standing Wave Ratio
V
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Threshold Voltage
V
TO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Threshold Voltage
Z
IF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Impedance at Intermediate Frequency
Z
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Impedance
SYMBOLS
12-4
Vol. 1
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
SILICON PIN DIODES
Selection guide
SILICON PIN DIODES
Selection Guide
PAGE
HOW TO SPECIFY A PIN DIODE?
12-5
SURFACE MOUNT PACKAGE
- PLASTIC PACKAGE SWITCHING SILICON PIN DIODES
12-6
- PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES
12-8
- LOW COST SQUARE CERAMIC PACKAGE PIN DIODES
12-10
- SQUARE CERAMIC PIN DIODES
12-12
- NON
MAGNETIC SQUARE CERAMIC PACKAGE 500 V PIN DIODES
12-15
HIGH VOLTAGE PIN DIODES
12-17
- SWITCHING & PHASE SHIFTING APPLICATIONS
12-18
- TWO AND THREE PORTS RF PIN SWITCH MODULES
12-20
MICROWAVE APPLICATIONS
12-22
- ULTRAFAST SWITCHING SILICON PIN DIODES
12-23
- FAST SWITCHING SILICON PIN DIODES
12-24
- ATTENUATOR SILICON PIN DIODES
12-25
- SILICON LIMITER PIN DIODES
12-26
SILICON PIN DIODES
How to specify a PIN diode
12-5
Vol. 1
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
HOW TO SPECIFY A PIN DIODE ?
1.
Application
switch
attenuator
limiter
2.
Frequency and bandwidth requirements
3.
Power characteristics
peak
average
pulse duration and duty cycle
4.
Switching time
5.
Bias conditions
forward
reverse
6.
Circuit impedance
7.
Shunt or series assembly
8. Maximum loss expected
9. Minimum isolation needed
10. VSWR and distortion requirements
11. Power applied to the diode
forward biased
reverse biased
during switching
12.Static characteristics
applicable voltage: V
R
total capacitance: C
T
(in space charge)
forward series resistance: R
SF
carrier lifetime
l
thermal resistance: R
th
13. Mechanical and packaging constraints
To obtain the PIN diodes best suited for a specific application, consider the following: