IN
1
IN
2
D
1
D
2
S
1
S
2
V
V+
GND
V
L
S
4
S
3
D
4
D
3
IN
4
IN
3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
DG213
DG213
Siliconix
S-56461--Rev. C, 29-Dec-97
1
Quad Complementary CMOS Analog Switch
Features
Benefits
Applications
D "22-V Supply Voltage Rating
D TTL and CMOS Compatible Logic
D Low On-Resistance--r
DS(on)
: 45
W
D Low Leakage--I
D(on)
: 20 pA
D Single Supply Operation Possible
D Extended Temperature Range
D Fast Switching--t
ON
: 85 ns
D Low Charge Injection--Q: 1 pC
D Wide Analog Signal Range
D Simple Logic Interface
D Higher Accuracy
D Minimum Transients
D Reduced Power Consumption
D Low Cost
D Industrial Instrumentation
D Test Equipment
D Communications Systems
D Computer Peripherals
D Portable Instruments
D Sample-and-Hold Circuits
Description
The versatile DG213 analog switch has two NC and two NO
switches. It can be used in various configurations, including
four single-pole single-throw (SPST), two single-pole
double-throw (SPDT), one "T" switch, one DPDT, etc. This
device is fabricated in a Siliconix' proprietary high-voltage
silicon gate CMOS process, resulting in lower on-resistance,
lower leakage, higher speed, and lower power consumption.
This analog switch was designed for a wide variety of
general purpose applications in telecommunications,
instrumentation,
process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. These switches can
handle up to
"22 V, and have an improved continuous
current rating of 30 mA. An epitaxial layer prevents
latchup.
All switches feature true bi-directional performance in
the on condition, and will block signals to the supply
levels in the off condition.
For additional information, please refer to Application
Note AN208.
Functional Block Diagram and Pin Configuration
Truth Table
Logic
SW
1
, SW
4
SW
2
, SW
3
0
OFF
ON
1
ON
OFF
Logic "0"
v 0.8 V
Logic "1"
w 2.4 V
Ordering Information
Temp Range
Package
Part Number
16-Pin Plastic DIP
DG213DJ
40 to 85
_C
16-Pin Narrow SOIC
DG213DY
16-Pin TSSOP
DG213DQ
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70662.
Applications information may also be obtained via FaxBack, request document #70606.
DG213
2
Siliconix
S-56461--Rev. C, 29-Dec-97
Absolute Maximum Ratings
Voltages Referenced to V
V+
44 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND
25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputs
a
V
S
, V
D
(V) 2 V to (V+) +2 V
. . . . . . . . . . . . . . . . . .
or 30 mA, whichever occurs first
Current, Any Terminal
30 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max)
100 mA
. . . . . . . . . . . . . . . . . . .
Storage Temperature
65 to 125
_C
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Package)
b
16-Pin Plastic DIP
c
470 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin Narrow SOIC
d
640 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin TSSOP
d
500 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on S
X
, D
X
, or IN
X
exceeding V+ or V will be clamped
by internal diodes. Limit forward diode current to maximum
current ratings.
b.
All leads welded or soldered to PC Board.
c.
Derate 6.5 mW/
_C above 75_C
d.
Derate 7.6 mW/
_C above 75_C
Specifications
Test Conditions
Unless Otherwise Specified
V
15 V V
15 V
D Suffix
40 to 85
_C
Parameter
Symbol
V+ = 15 V, V = 15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
Temp
a
Min
c
Typ
b
Max
c
Unit
Analog Switch
Analog Signal Range
d
V
ANALOG
Full
V
V+
V
Drain-Source On-Resistance
r
DS(on)
V
D
=
"10 V, I
S
= 1 mA
Room
Full
45
60
85
W
r
DS(on)
Match
Dr
DS(on)
D
,
S
Room
1
2
Source Off Leakage Current
I
S(off)
V
S
=
"14 V, V
D
=
#14 V
Room
Full
0.5
5
"0.01
0.5
5
Drain Off Leakage Current
I
D(off)
V
D
=
"14 V, V
S
=
#14 V
Room
Full
0.5
5
"0.01
0.5
5
nA
Drain On Leakage Current
I
D(on)
V
S
= V
D
= 14 V
Room
Full
0.5
10
"0.02
0.5
10
Digital Control
Input Voltage High
V
INH
Full
2.4
V
Input Voltage Low
V
INL
Full
0.8
V
Input Current
I
INH
or I
INL
V
INH
or V
INL
Full
1
1
mA
Input Capacitance
C
IN
Room
5
pF
Dynamic Characteristics
Turn-On Time
t
ON
V
S
= 2 V
S
Fi
2
Room
85
130
Turn-Off Time
t
OFF
S
See Figure 2
Room
55
100
ns
Break-Before-Make Time Delay
t
D
V
S
= 10 V, See Figure 3
Room
20
25
Charge Injection
Q
C
L
= 1000 pF, V
g
= 0 V, R
g
= 0
W
Room
1
pC
Source-Off Capacitance
C
S(off)
V
S
= 0 V f = 1 MHz
Room
5
Drain-Off Capacitance
C
D(off)
V
S
= 0 V, f = 1 MHz
Room
5
pF
Channel On Capacitance
C
D(on)
V
D
= V
S
= 0 V, f = 1 MHz
Room
16
Off Isolation
OIRR
C
L
= 15 pF, R
L
= 50
W
V
1 V
f
100 kH
Room
90
dB
Channel-to-Channel Crosstalk
X
TALK
L
p ,
L
V
S
= 1 V
RMS
, f = 100 kHz
Room
95
dB
DG213
Siliconix
S-56461--Rev. C, 29-Dec-97
3
Specifications
Test Conditions
Unless Otherwise Specified
V
15 V V
15 V
D Suffix
40 to 85
_C
Parameter
Symbol
V+ = 15 V, V = 15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
Temp
a
Min
c
Typ
b
Max
c
Unit
Power Supply
Positive Supply Current
I+
V
IN
= 0 or 5 V
Room
Full
1
5
Negative Supply Current
I
V
IN
= 0 or 5 V
Room
Full
1
5
mA
Logic Supply Current
I
L
Room
Full
1
5
Power Supply Range for
Continuous Operation
V
OP
Full
"3
"22
V
Specifications
for Unipolar Supply
Test Conditions
Unless Otherwise Specified
V
12 V V
0 V
D Suffix
40 to 85
_C
Parameter
Symbol
V+ = 12 V, V = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
Temp
a
Min
c
Typ
b
Max
c
Unit
Analog Switch
Analog Signal Range
d
V
ANALOG
Full
V
V+
V
Drain-Source On-Resistance
r
DS(on)
V
D
= 3 V, 8 V, I
S
= 1 mA
Room
Full
90
110
140
W
Dynamic Characteristics
Turn-On Time
t
ON
V
S
= 8 V
S
Fi
2
Room
125
200
Turn-Off Time
t
OFF
S
See Figure 2
Room
45
100
ns
Break-Before-Make Time Delay
t
D
DG213 Only, See Figure 3
Room
50
80
Charge Injection
Q
C
L
= 1 nF, V
gen
= 6 V, R
gen
= 0
W
Room
4
pC
Power Supply
Positive Supply Current
I+
V
IN
= 0 or 5 V
Room
Full
1
5
Negative Supply Current
I
V
IN
= 0 or 5 V
Room
Full
1
5
mA
Logic Supply Current
I
L
Room
Full
1
5
Power Supply Range for
Continuous Operation
V
OP
Full
)3
)40
V
Notes:
a.
Room = 25
_C, Full = as determined by the operating temperature suffix.
b.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d.
Guaranteed by design, not subject to production test.
e.
V
IN
= input voltage to perform proper function.
DG213
4
Siliconix
S-56461--Rev. C, 29-Dec-97
Typical Characteristics
0
50
100
150
200
250
300
0
2
4
6
8
10
12
85
_C
20 16 12 8
4
0
4
8
12
16
20
40
50
60
70
80
90
100
110
0
10
20
30
40
50
15
10
5
0
5
10
15
"5 V
r
DS(on)
vs. V
D
and Power Supply Voltages
V
D
Drain Voltage (V)
"10 V
"15 V
"20 V
r
DS(on)
vs. V
D
and Temperature
V
D
Drain Voltage (V)
125
_C
25
_C
55
_C
V+ = 15 V
V = 15 V
30
20
10
60
70
80
90
100
r
DS(on)
Drain-Source On-Resistance (
)
W
r
DS(on)
Drain-Source On-Resistance (
)
W
r
DS(on)
vs. V
D
and Single Power Supply Voltages
V
D
Drain Voltage (V)
5 V
7 V
10 V
12 V
20
15
10
5
0
5
10
15
20
40
20
0
20
40
Leakage Currents vs. Analog Voltage
I
S,
I
D
Current (pA)
I
S(off)
, I
D(off)
I
D(on)
55
25
45
5
15
65
1 nA
100 pA
10 pA
35
1 pA
85
105 125
V+ = 15 V
V = 15 V
V
S,
V
D
=
"14 V
I
S(off)
, I
D(off)
I
S,
I
D
Current
Temperature (
_C)
Leakage Current vs. Temperature
r
DS(on)
Drain-Source On-Resistance (
)
W
V
ANALOG
Analog Voltage (V)
V+ = 22 V
V = 22 V
T
A
= 25
_C
30
10
10
30
15
10
5
0
5
10
15
30
20
10
0
10
20
30
V+ = 15 V
V = 15 V
V+ = 12 V
V = 0 V
Q Char
ge (pC)
Q
S,
Q
D
Charge Injection vs. Analog Voltage
V
ANALOG
Analog Voltage (V)
V = 0 V
V
L
= 5 V
DG213
Siliconix
S-56461--Rev. C, 29-Dec-97
5
Typical Characteristics (Cont'd)
OIRR (dB)
10 k
100 k
1 M
10 M
40
50
60
70
80
90
100
110
120
f Frequency (Hz)
Off Isolation vs. Frequency
V+ = +15 V
V = 15 V
R
L
= 50
W
Schematic Diagram (Typical Channel)
Figure 1.
D
X
S
X
V+
IN
X
V
Level
Shift/
GND
V+
V
Drive
V
L
Test Circuits
Figure 2.
Switching Time
50%
0 V
3 V
t
OFF
t
ON
V
O
t
r
<20 ns
t
f
<20 ns
Logic
Input
Switch
Output
90%
C
L
35 pF
R
L
300 k
W
V
O
= V
S
R
L
+ r
DS(on)
R
L
V
S
= +2 V
V
O
V
V+
IN
S
D
3 V
15 V
GND
+15 V
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