ND2012L/2020L
Siliconix
S-52426--Rev. C, 14-Apr-97
1
N-Channel Depletion-Mode MOSFET Transistors
Product Summary
Part Number
V
(BR)DSV
Min (V)
r
DS(on)
Max (
W)
V
GS(off)
(V)
I
D
(A)
ND2012L
200
12
1.5 to 4
0.16
ND2020L
200
20
0.5 to 2.5
0.132
Features
Benefits
Applications
D High Breakdown Voltage: 220 V
D Normally "On" Low r
DS
Switch: 9
W
D Low Input and Output Leakage
D Low-Power Drive Requirement
D Low Input Capacitance
D Full-Voltage Operation
D Low Offset Voltage
D Low Error Voltage
D Easily Driven Without Buffer
D High-Speed Switching
D Normally "On" Switching Circuits
D Current Sources/Limiters
D Power Supply, Converter Circuits
D Solid-State Relays
D Telecom Switches
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
Absolute Maximum Ratings (T
A
= 25
_C Unless Otherwise Noted)
Parameter
Symbol
ND2012L
ND2020L
Unit
Drain-Source Voltage
V
DS
200
200
V
Gate-Source Voltage
V
GS
"30
"30
V
Continuous Drain Current (T
J
= 150
_C)
T
A
= 25
_C
I
D
0.16
0.132
Continuous Drain Current
(T
J
= 150
_C)
T
A
= 100
_C
I
D
0.1
0.083
A
Pulsed Drain Current
a
I
DM
0.8
0.8
Power Dissipation
T
A
= 25
_C
P
D
0.8
0.8
W
Power Dissipation
T
A
= 100
_C
P
D
0.32
0.32
W
Maximum Junction-to-Ambient
R
thJA
156
156
_C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_C
Notes
a.
Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70197.
Applications information may also be obtained via FaxBack, request document #70612.
ND2012L/2020L
2
Siliconix
S-52426--Rev. C, 14-Apr-97
Specifications
a
Limits
ND2012L
ND2020L
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Drain Source Breakdown Voltage
V
(BR)DSV
V
GS
= 8 V, I
D
= 10
mA
220
200
Drain-Source Breakdown Voltage
V
(BR)DSV
V
GS
= 5 V, I
D
= 10
mA
220
200
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 5 V, I
D
= 10
mA
1.5
4
0.5
2.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"20 V
"10
"10
nA
Gate-Body Leakage
I
GSS
T
J
=
125_C
"50
"50
nA
V
DS
= 160 V, V
GS
= 8 V
1
Drain Cutoff Current
I
D(off)
T
J
=
125_C
200
mA
Drain Cutoff Current
I
D(off)
V
DS
= 160 V, V
GS
= 5 V
1
mA
T
J
=
125_C
200
Drain-Saturation Current
c
I
DSS
V
DS
= 10 V, V
GS
= 0 V
300
30
30
mA
V
GS
= 2 V, I
D
= 20 mA
7
W
Drain-Source On-Resistance
c
r
DS(on)
V
GS
= 0 V, I
D
= 20 mA
8
12
20
W
T
J
=
125_C
12.6
30
50
Forward Transconductance
c
g
fs
V
DS
= 7 5 V I
D
= 20 mA
55
mS
Common Source Output Conductance
c
g
os
V
DS
= 7.5 V, I
D
= 20 mA
75
mS
Dynamic
Input Capacitance
C
iss
35
100
100
Output Capacitance
C
oss
V
DS
= 25 V, V
GS
= 5 V, f = 1 MHz
10
20
20
pF
Reverse Transfer Capacitance
C
rss
2
5
5
Switching
d
Turn-On Time
t
d(on)
V
V R
1250 W
20
Turn-On Time
t
r
V
DD
= 25 V, R
L
= 1250 W
I
D
^ 20 mA, V
GEN
= -5 V
20
ns
Turn-Off Time
t
d(off)
I
D
^ 20 mA, V
GEN
= -5 V
R
G
= 25 W
10
ns
Turn-Off Time
t
f
10
Notes
a.
T
A
= 25
_C unless otherwise noted.
VDDQ20
b.
For DESIGN AID ONLY, not subject to production testing.
c.
Pulse test: PW
v300 ms duty cycle v2%.
d.
Switching time is essentially independent of operating temperature.
ND2012L/2020L
Siliconix
S-52426--Rev. C, 14-Apr-97
3
Typical Characteristics (25
_C Unless Otherwise Noted)
Output Characteristics (ND2020)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
On-Resistance vs. DrainCurrent
Transfer Characteristics (ND2012)
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
Drain Current (mA)
I
D
Drain Current (mA)
I
D
Drain Current (A)
I
D
On-Resistance (
r
DS(on)
W
)
V
DS
Drain-to-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
Output Characteristics (ND2012)
Transfer Characteristics (ND2020)
Drain Current (mA)
I
D
V
GS(off)
Gate-Source Cutoff Voltage (V)
I
D
Drain Current (mA)
100
80
60
0
0
0.4
2
40
20
0.8
1.2
1.6
0 V
1 V
1.5 V
2 V
0.5 V
2.5 V
500
400
300
0
4.5
3.5
0.5
200
100
2.5
1.5
0.5
125
_C
T
C
= 55
_C
100
0
0.4
0.8
1.2
1.6
2
80
60
40
20
0
0.2 V
0.2 V
0 V
0.4 V
0.6 V
0.8 V
1 V
1.4 V
1.2 V
200
160
120
80
40
0
4.5
3.5
2.5
1.5
0.5
0.5
55
_C
T
C
= 125
_C
25
20
15
0
0
1
5
10
5
2
3
4
1000
800
600
0
400
200
r
DS(on)
I
DSS
r
DS
@ I
D
= 20 mA, V
GS
= 0 V
I
DSS
@ V
DS
= 7.5 V, V
GS
= 0 V
10
100
1 K
25
20
0
15
10
5
ND2020
ND2012
V
GS
= 0 V
Drain Current (mA)
I
DSS
25
_C
25
_C
V
DS
= 10 V
V
DS
= 10 V
V
GS
= 2 V
V
GS
= 5 V
On-Resistance (
r
DS(on)
W
)
ND2012L/2020L
4
Siliconix
S-52426--Rev. C, 14-Apr-97
Typical Characteristics (25
_C Unless Otherwise Noted) (Cont'd)
100
10
1
1
100
10
V
DD
= 25 V
V
GS
= 0 to 5 V
R
G
= 25
W
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1
1
100
10
1 K
Forward Transconductance and Output
Conductance vs. Drain Current
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Capacitance
Load Condition Effects on Switching
Normalized Ef
fective
T
ransient
Thermal Impedance
t
1
Square Wave Pulse Duration (sec)
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
C Capacitance (pF)
t Switching
T
ime (ns)
t
d(on)
t
d(off)
t
r
t
f
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
I
D
Drain Current (A)
T
J
Junction Temperature (
_C)
r
DS(on)
Drain-Source On-Resistance
(Normalized)
Normalized On-Resistance
vs. Junction Temperature
g
fs
Forward
T
ransconductance
(mS)
S)
g
os
Output Conductance (
m
2.25
2.00
1.75
0.50
50
10
150
1.50
1.25
30
70
110
1.00
0.75
V
GS
= 0 V
I
D
= 20 mA
700
300
100
500
400
200
600
350
150
50
1
10
100
1 K
250
200
100
300
0
0
V
DS
= 7.5 V
Pulse Test
80 ms, 1% Duty Cycle
120
100
80
0
60
40
20
0
10
50
20
30
40
C
iss
C
rss
C
oss
g
fs
g
os
V
GS
= 5 V
f = 1 MHz
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