TBA120T
TELEFUNKEN Semiconductors
1
Rev. A1: 20.12.1994
FM IF amplifier and demodulator
Technology: Bipolar
Features
D Input and demodulator provided for operating with
ceramic-resonators
D No selection of volume-input characteristics
D Independent sound output for VTR and headphone
D Additional sound input
D High ripple rejection
D High residual carrier suppression prevents harmonic
distortions
Case: 14 pin dual inline plastic
Figure 1 Block diagram
Pin Configuration
Pin
Symbol
Function
1
GND
Ground
2, 13
Feedback
3
V
i(AF)
AF input SCART
4
V
ref
Reference voltage
5
V
5
Volume control
Pin
Symbol
Function
6,7,9,10
FM demodulator filter
8
V
o(AF)1
AF output controlled
11
V
S
Supply voltage
12
V
o(AF)2
AF output uncontrolled
14
V
i(IF)
IF input
TELEFUNKEN Semiconductors
TBA120T
2
Rev. A1: 20.12.1994
Absolute Maximum Ratings
Reference point pin 1, unless otherwise specified
Parameters
Symbol
Value
Unit
Supply voltage
Pin 11
V
S
18
V
Volume setting voltage
Pin 5
V
5
6
V
Reference supply current
Pin 4
I
Ref
5
mA
Power dissipation
T
amb
= 60
C
P
tot
400
mW
Ambient temperature range
T
amb
15 to +70
C
Storage temperature range
T
stg
25 to +125
C
Electrical Characteristics
T
amb
= +25
C, V
S
= 12 V, f = 5.5 MHz, Figure 3, reference point pin 1, unless otherwise specified
Parameters
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
Unit
Supply voltage range
Pin 11
V
S
10
18
V
Supply current
Pin 11
I
S
9.5
17.5
mA
Reference voltage
Pin 4
V
oRef
4.2
4.8
5.5
V
Output resistance
Pin 4
r
Ref
12
W
Frequency range
f
0 to 12
MHz
IF voltage gain
Pin 6/14
G
IF
68
dB
Limited IF output voltage
Pin 6 10
V
o(IF)pp
250
mV
Input limiting voltage
Df =" 50 kHz,
f
mod
= 1 kHz
Pin 14
V
i(IF)
30
60
mV
Input impedance
Pin 14
R
i
C
i
800
5
W
pF
AM rejection
m = 30 %,
Df =" 50 kHz,
V
i
= 500
mV, f
mod
= 1 kHz
k
AM
50
60
dB
DC voltage at AF output
V
i
= 0
Pin 8
Pin 12
V
o(AF)1
V
o(AF)2
4
5.6
V
V
Ripple rejection
Pin 11/8
Pin 11/12
k
Br
k
Br
35
30
dB
IF residual voltage
without de-emphasis
capacitor
Pin 8
Pin 12
V
o(IF)1
V
o(IF)2
20
30
mV
AF output voltage
V
i
= 10 mV,
Df ="50 kHz,
f
mod
= 1 kHz, R
5
= 20 k
W
Pin 8
Pin 12
V
o(AF)1
V
o(AF)2
650
400
900
650
mV
mV
Output resistance
Pin 8, 12
r
o
1.1
k
W
AF voltage amplification
R
5
= 20 k
W,
Pin 8/3
G
v1
7.5
dB
AF damping
R
5
= 13 k
W, Fig. 3 Pin 8
G
v1
24
30
34
dB
Volume setting range
Pin 8
DV
o(AF)1
70
85
dB
Input resistance
Pin 3
r
i
2
k
W
Mute function
Switching current
Pin 2 or 13
I
sw
400
mA
Switching voltage
Figure 2
V
mute
3
V
TELEFUNKEN Semiconductors
TBA120T
4
Rev. A1: 20.12.1994
Dimensions in mm
Package: JEDEC MO 001, DIP 14-leads
We reserve the right to make changes to improve technical design without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application,
the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax Number: 49 ( 0 ) 7131 67 2423
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