TFMS 5..0
TELEFUNKEN Semiconductors
Rev. A4, 15-Jul-96
1 (6)
Photo Modules for PCM Remote Control Systems
Available types for different carrier frequencies
Type
f
0
Type
f
0
TFMS 5300
30 kHz
TFMS 5330
33 kHz
TFMS 5360
36 kHz
TFMS 5370
36.7 kHz
TFMS 5380
38 kHz
TFMS 5400
40 kHz
TFMS 5560
56 kHz
Description
The TFMS 5..0 series are miniaturized receivers for in-
frared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be decoded
by a microprocessor. The main benefit is the reliable
function even in disturbed ambient and the protection
against uncontrolled output pulses.
94 8691
GND
V
S
OUT
Features
D Photo detector and preamplifier in one package
D Output active low
(active high modules: TFMS 5..9)
D Internal filter for PCM frequency
D High immunity against ambient light
D Improved shielding against electric field
disturbance
D 5 Volt supply voltage, low power consumption
D TTL and CMOS compatibility
D Continuous transmission possible (t
pi
/T
x0.4)
Block Diagram
94 8136
PIN
Input
AGC
Control
Circuit
Band
Pass
Demodu-
lator
100 k
W
1
2
3
V
S
OUT
GND
TFMS 5..0
TELEFUNKEN Semiconductors
Rev. A4, 15-Jul-96
2 (6)
Absolute Maximum Ratings
T
amb
= 25
_C
Parameter
Test Conditions
Symbol
Value
Unit
Supply Voltage
(Pin 2)
V
S
0.3...6.0
V
Supply Current
(Pin 2)
I
S
5
mA
Output Voltage
(Pin 3)
V
O
0.3...6.0
V
Output Current
(Pin 3)
I
O
5
mA
Junction Temperature
T
j
100
C
Storage Temperature Range
T
stg
25...+85
C
Operating Temperature Range
T
amb
25...+85
C
Power Consumption
(T
amb
x 85 C)
P
tot
50
mW
Soldering Temperature
t
x 10 s, 1 mm from case
T
sd
260
C
Basic Characteristics
T
amb
= 25
_C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Supply Current (Pin 2)
V
S
= 5 V, E
v
= 0
I
SD
0.4
0.5
0.8
mA
pp y
(
)
V
S
= 5 V, E
v
= 40 klx, sunlight
I
SH
1.0
mA
Transmission Distance
E
v
= 0, test signal see fig.7,
IR diode TSIP5201, I
F
= 1.5 A
d
35
m
Output Voltage Low (Pin 3)
I
OSL
= 0.5 mA,E
e
= 0.7 mW/m
2
,
f = f
o
, t
p
/T = 0.4
V
OSL
250
mV
Irradiance (30 40 kHz)
Pulse width tolerance:
t
po
=t
pi
160
ms, test signal (see fig.7)
E
e min
0.3
0.5
mW/m
2
Irradiance (56 kHz)
Pulse width tolerance:
t
po
=t
pi
160
ms, test signal (see fig.7)
E
e min
0.4
0.7
mW/m
2
Irradiance
E
e max
20
W/m
2
Directivity
Angle of half transmission distance
1/2
55
deg
Application Circuit
94 8137
TSUS 5...
TSIP 5...
TFM. 5..0
2
3
1
4.7
mF *)
mC
>10 k
W
optional
330
W *)
+ 5 V **)
*) only necessary to suppress power supply disturbances
**) tolerated supply voltage range : 4.5 V< V
S
< 5.5 V
GND
TFMS 5..0
TELEFUNKEN Semiconductors
Rev. A4, 15-Jul-96
3 (6)
Typical Characteristics (T
amb
= 25
_C unless otherwise specified)
0.7
0.8
0.9
1.0
1.1
E / E Rel. Responsitivity ( % )
e min
f / f
0
Relative Frequency
1.3
94 8143
0.0
0.2
0.4
0.6
0.8
1.0
e
1.2
f = f
0
"5%
Df ( 3dB ) = f
0
/ 10
Figure 1. Frequency Dependence of Responsivity
0.1
1.0
10.0
0
200
400
600
1000
1200
t Output Pulse Length ( s )
po
E
e
Irradiance ( mW / m
2
)
100.0
94 8145
m
800
l = 950 nm, Optical Test Signal, Fig.7
Input Burst Duration
Figure 2. Sensitivity in Dark Ambient
0.01
0.1
1.0
10.0
0.1
1.0
10.0
100.0
E
Threshold Irradiance ( mW/m )
e min
E Irradiance ( W / m
2
)
100.0
94 8146
2
Ambient,
l = 950 nm
Correlation with Ambient Light Sources
( Disturbance Efect ) : 1 0W/m2
^1.4 klx
( Stand.Illum.A, T = 2855 K )
^8.2 klx
( Daylight, T = 5900 K )
Figure 3. Sensitivity in Bright Ambient
0.0
0.4
0.8
1.2
1.6
0.0
0.4
0.8
1.2
2.0
E Field Strength of Disturbance ( kV / m )
2.0
94 8147
1.6
E
Threshold Irradiance ( mW/m )
e min
2
f ( E ) = f
0
Figure 4. Sensitivity vs. Electric Field Disturbances
0.1
1
10
100
0.1
1
10
100
DV
s RMS
AC Voltage on DC Supply Voltage ( mV )
1000
94 8148
E
Threshold Irradiance ( mW/m )
e min
2
f = f
0
10 kHz
100 Hz
Figure 5. Sensitivity vs. Supply Voltage Disturbances
E
Threshold Irradiance ( mW/m )
e min
2
30
0
30
60
0.0
0.2
0.4
0.6
0.8
1.0
T
amb
Ambient Temperature (
C )
90
94 8149
Sensitivity in dark Ambient
Figure 6. Sensitivity vs. Ambient Temperature
TFMS 5..0
TELEFUNKEN Semiconductors
Rev. A4, 15-Jul-96
4 (6)
E
e
T
t
pi
*
t
* t
pi
w 400 ms is recommended for optimal function
V
O
V
OH
V
OL
t
po
t
po
= t
pi
"160 ms
t
94 8133
Optical Test Signal
( IR diode TSIP 5201, I
F
= 1.5 A, 30 pulses, f = f
0
, T = 10 ms )
Output Signal
Figure 7. Output Function
E
e
t
V
O
V
OH
V
OL
t
600
ms
600
ms
T = 60 ms
T
on
T
off
94 8134
Optical Test Signal
Output Signal, ( see Fig.10 )
Figure 8. Output Function
0.05
0.25
0
2
4
t
p
/ T Duty Cycle
0.45
94 8144
0.15
0.35
8
6
E
Threshold Irradiance ( mW/m )
e min
2
Figure 9. Sensitivity vs. Duty Cycle
0.1
1
10
100
1000
T
,T
- Output Pulse Length ( ms )
on
E
e
Irradiance ( mW / m
2
)
10000
94 8151
0.0
0.2
0.4
0.6
0.8
1.0
T
on
T
off
l = 950 nm, Optical Test Signal, Fig.8
of
f
Figure 10. Output Pulse Diagram
I Supply Current ( mA
)
s
T
amb
Ambient Temperature (
C )
94 8150
30
0
30
60
0.0
0.2
0.4
0.6
0.8
1.0
90
V
s
= 5 V
Figure 11. Supply Current vs. Ambient Temperature
800
900
1000
s Relative Responsitivity ( % )
rel
l Wavelength ( nm )
1100
94 8154
0.0
0.2
0.4
0.6
0.8
1.0
Figure 12. Spectral Response
TFMS 5..0
TELEFUNKEN Semiconductors
Rev. A4, 15-Jul-96
5 (6)
f
x
f
y
0
0.4
0.2
0.2
0.4
30
d
rel
Relative Transmission Distance
0.6
94 8152
0.6
0
10
10
20
20
40
Figure 13. Vertical Directivity
y
94 8153
0
0.4
0.2
0.2
0.4
30
d
rel
Relative Transmission Distance
0.6
0.6
0
10
10
20
20
40
Figure 14. Horizontal Directivity
x
Dimensions in mm
96 12116
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