THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

Low-Noise Matched Transistor Array ICs

FEATURES

4 Matched NPN Transistors (300)
4 Matched PNP Transistors (320)
2 Matched NPNs and PNPs (340)
4 Matched NP6N - 4 Matched PNP (380)

Monolithic Construction

Low Noise
- 0 75

(

)

nV Hz PNP

- 0 8

(

)

nV Hz NPN

High Speed
- f

= 350 MHz (NPN)

- f

= 325 MHz (PNP)

Excellent Matching 500

mV typical

between devices of same gender

Dielectrically Isolated

36V V

CEO

APPLICATIONS

Microphone Preamplifiers

Current Sources

Current Mirrors

Log/Antilog Amplifiers

Multipliers

Servos

DESCRIPTION

The THAT300 Series ICs are large-geometry

monolithic NPN and/or PNP transistor arrays which
combine low noise, high speed and excellent para-
metric matching between devices of the same gender.
The large geometries typically result in 25

W base

spreading resistance for the PNP devices (30

W for

the NPNs), producing 0 75

nV Hz voltage noise

( .

0 8

Hz for the NPNs). This makes the 300

Series an ideal choice for low-noise amplifier input
stages.

Fabricated on a Complementary Bipolar Dielec-

trically Isolated process, each transistor is electri-

cally isolated from the others by a layer of insulating
oxide. The resulting low collector-to-substrate capac-
itance produces a typical NPN f

of 350 MHz,

325 MHz for the PNPs. This delivers ac performance
similar to discrete 2N3904- and 2N3906-class de-
vices. Dielectric isolation also minimizes crosstalk
and provides complete DC isolation.

Substrate biasing is not required for normal op-

eration, though the substrate should be grounded to
optimize speed and minimize inter-device crosstalk.
The monolithic construction assures excellent pa-
rameter matching and tracking over temperature.

T H A T

C o r p o r a t i o n

THAT 300 Series

Part Number

Configuration

Package

THAT300P

4-Matched NPN Transistors

DIP14

THAT300S

SO14

THAT320P

4- Matched PNP Transistors

DIP14

THAT320S

SO14

THAT340P

2 Matched NPN Transistors and

2 Matched PNP Transistors

DIP14

THAT340S

SO14

THAT380G

4 Matched NPN Transistors and

4 Matched PNP Transistors

Individual Die

Table 1. Ordering Info

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

Page 2

THAT300 Series Transistor Arrays

SPECIFICATIONS

Maximum Ratings (T

= 25°C)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

NPN Collector-Emitter Voltage

CEO

= 1 mAdc, I

= 0

NPN Collector-Base Voltage

CBO

=10

mAdc, I

NPN Emitter-Base Voltage

EBO

= 100

mAdc, I

= 0

NPN Collector Current

C MAX

NPN Emitter Current

E MAX

PNP Collector-Emitter Voltage

CEO

= 1 mAdc, I

= 0

PNP Collector-Base Voltage

CBO

= 10

mAdc, I

= 0

PNP Emitter-Base Voltage

EBO

= 100

mAdc, I

= 0

PNP Collector Current

C MAX

PNP Emitter Current

E MAX

Collector-Collector Voltage

±100

±200

Emitter-Emitter Voltage

±100

±200

Operating Temperature Range

°C

Maximum Junction Temperature

JMAX

150

°C

Storage Temperature

STORE

-45

125

°C

SUB

THAT 300

Fig 1. 300 Pinout

SUB

THAT 320

Fig 2. 320 Pinout

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

600041 Rev B

Page 3

1. All specifications subject to change without notice.
2. Unless otherwise noted, T

=25°C.

SPECIFICATIONS

(Cont'd)

NPN Electrical Characteristics

Parameter

Symbol

Conditions

Min

Typ

Max

Units

NPN Current Gain

= 10 V

= 1 mA

100

= 10

100

NPN Current Gain Matching

= 10 V, I

= 1 mA

NPN Noise Voltage Density

= 10 V, I

= 1 mA, 1 kHz

0.8

nV Hz

NPN Gain-Bandwidth Product

= 1 mA, V

= 10 V

350

MHz

NPN

(THAT300: V

BE1

-V

BE2 ;

BE3

-V

BE4

) (THAT340: V

BE1

-V

BE2

)

= 1 mA

±0.5

±3

= 10

±0.5

NPN

(THAT300: I

-I

B2,

-I

) (THAT340: I

-V

)

= 1 mA

±500

±1500

= 10

±5

NPN Collector-Base Leakage Current I

CBO

= 25 V

NPN Bulk Resistance

= 0 V, 10

mA < I

< 10 mA

NPN Base Spreading Resistance

= 10 V, I

= 1 mA

NPN Collector Saturation Voltage

CE(SAT)

= 1 mA, I

= 100

0.05

NPN Output Capacitance

= 10 V, I

= 0 mA, 100 kHz

NPN Collector-CollectorCapacitance (THAT300: Q1-Q2, Q3-Q4) (THAT340: Q1-Q2)

= 0 V, 100 kHz

0.7

SUB

THAT 340

Fig 3. 340 Pinout

GKH YK

THAT

312

17C1

18B

PNP

NPN

PNP

NPN

Fig 4. 380 Die layout

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

Page 4

THAT300 Series Transistor Arrays

SPECIFICATIONS

(Cont'd)

PNP Electrical Characteristics

Parameter

Symbol

Conditions

Min

Typ

Max

Units

PNP Current Gain

= 10 V

= 1 mA

= 10

PNP Current Gain Matching

= 10 V, I

= 1 mA

PNP Noise Voltage Density

= 10 V, I

= 1 mA, 1 kHz

0.75

nV Hz

PNP Gain-Bandwidth Product

= 1 mA, V

= 10 V

325

MHz

PNP

(THAT320: V

BE1

-V

BE2;

BE3

-V

BE4

) (THAT340: V

BE3

-V

BE4

)

= 1 mA

±0.5

±3

= 10

±0.5

PNP

(THAT320: I

-I

B2;

-I

) (THAT340: I

-I

)

= 1 mA

±700

±1800

= 10

±7

PNP Collector-Base

Leakage Current

CBO

= 25 V

PNP Bulk Resistance

= 0 V, 10

mA < I

< 10 mA

PNP Base Spreading Resistance

= 10 V, I

= 1 mA

PNP Collector Saturation Voltage

CE(SAT)

= 1 mA, I

= 100

0.05

PNP Output Capacitance

= 10 V, I

= 0 mA, 100 kHz

PNP Collector-Collector Capacitance (THAT320: Q1-Q2; Q3-Q4) (THAT340: Q3-Q4)

= 0 V, 100 kHz

0.6

Information furnished by THAT Corporation is believed to be accurate and reliable. However no responsibility is as-

sumed by THAT Corporation for it's use nor for any infringements of patents or other rights of third parties which may
result from it's use.

LIFE SUPPORT POLICY

THAT Corporation products are not designed for use in life support equipment where malfunction of such products

can reasonably be expected to result in personal injury or death. The buyer uses or sells such products for life suport
application at the buyer's own risk and agrees to hold harmless THAT Corporation from all damages, claims, suits or
expense resulting from such use.

CAUTION: THIS IS AN ESD (ELECTROSTATIC DISCHARGE) SENSITIVE DEVICE.

It can be damaged by the currents generated by electrostatic discharge. Static charge and therefore dangerous volt-

ages can accumulate and discharge without detection causing a loss of function or performance to occur.

The transistors in this device are unprotected in order to maximize performance and flexibility. They are more sen-

sitive to ESD damage than many other ICs which include protection devices at their inputs. Note that all of the pins
(not just the "inputs") are susceptible.

Use ESD preventative measures when storing and handling this device. Unused devices should be stored in conduc-

tive packaging. Packaging should be discharged to the destination socket before the devices are removed. ESD damage
can occur to these devices even after they are installed in a board-level assembly. Circuits should include specific and
appropriate ESD protection.

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

600041 Rev B

Page 5

GKH

THA

312

17C1 18B

1232u

1613u

95.5

286.5

477.5

668.5

95.5

286.5

1.5

477.5

-95.5

-286.5

-477.5

-668.5

-95.5

-286.5

-41

-477.5

90u

Figure 7. Die dimensions

0.750±0.004

(19.05±0.10)

0.25±.004

(6.35±0.10)

0.30 ±0.02

(7.62 ±0.5)

0.060

(1.52)

0.075
(1.91)

0.10 Typ.

(2.54)

0.018

(0.46)

0.125±0.004

(3.18±0.10)

Typ.

0.010

(0.25)

Note:

JA = 100 °C / W

Figure 5. Dual-In-Line Package Outline

0.050

(1.27)

Typ

0.245

(6.2)

Max

0.157

(3.99)

Max

0.018 (0.46)
Max

0.344 (8.74)

Max

0.069

(1.75)

Max

0.010

(0.25)

Max

Note:

JA = 100 °C / W

Figure 6. Surface-Mount Package Outline

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