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FEATURES
APPLICATIONS
DESCRIPTION
ONET4291TA
SLLS670 SEPTEMBER 2005
4.25-Gbps Transimpedance Amplifier With AGC and RSSI
SONET/SDH Transmission Systems at OC24
2.8-GHz Bandwidth
and OC48
3.2-k
Differential Transimpedance
4.25-Gbps, 2.125-Gbps, and 1.0625-Gbps
Automatic Gain Control (AGC)
Fiber-Channel Receivers
8.8-pA/
Hz Typical Input Referred Noise
Gigabit Ethernet Receivers
2-mA
p-p
Maximum Input Current
PIN Preamplifier-Receivers
Received Signal Strength Indication (RSSI)
CML Data Outputs With On-Chip 50-
Back-Termination
On-Chip Supply Filter Capacitor
Single 3.3-V Supply
Die Size: 0,78
1,18 mm
The ONET4291TA is a high-speed transimpedance amplifier used in optical receivers with data rates up to 4.25
Gbps.
It features a low input referred noise, 2.8-GHz bandwidth, automatic gain control (AGC), 3.2-k
transimpedance,
and received signal strength indication (RSSI).
The ONET4291TA is available in die form and is optimized for use in a TO can.
The ONET4291TA requires a single 3.3-V supply, and its power-efficient design typically dissipates less than 56
mW. The device is characterized for operation from 40
C to 85
C ambient temperature.
AVAILABLE OPTIONS
T
A
DIE
40
C to 85
C
ONET4291TAY
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright 2005, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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BLOCK DIAGRAM
B0066-01
OUT+
OUT!
RSSI
V
CC
FILTER
220 W
200 pF
275 pF
DC Input Current
Cancellation,
AGC, and RSSI
Band-Gap Voltage
Reference and
Bias Current
Generation
GND
R
F
IN
Voltage Amplifier
CML Output Buffer
Transimpedance Amplifier
SIGNAL PATH
ONET4291TA
SLLS670 SEPTEMBER 2005
The ONET4291TA is a high-performance, 4.25-Gbps transimpedance amplifier consisting of the signal path,
supply filter, a control block for dc input current cancellation, automatic gain control (AGC), received signal
strength indication (RSSI), and a band-gap voltage reference and bias current generation block.
The signal path comprises a transimpedance amplifier stage, a voltage amplifier, and a CML output buffer.
The on-chip filter circuit provides filtered V
CC
for the photodiode and for the transimpedance amplifier. The dc
input current cancellation and AGC use internal low-pass filters to cancel the dc current on the input and to
adjust the transimpedance amplifier gain. Furthermore, circuitry to monitor the received signal strength is
provided.
A simplified block diagram of the ONET4291TA is shown in
Figure 1
.
Figure 1. Simplified Block Diagram of the ONET4291TA
The first stage of the signal path is a transimpedance amplifier that takes the photodiode current and converts it
into a voltage signal.
If the input signal current exceeds a certain value, the transimpedance gain is reduced by means of AGC
circuitry.
The second stage is a voltage amplifier that provides additional gain and converts its single-ended input voltage
into a differential data signal.
The third signal-path stage is the output buffer, which provides CML outputs with on-chip, 50-
back-termination
to V
CC
.
2
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FILTER CIRCUITRY
DC INPUT CURRENT CANCELLATION, AGC, AND RSSI
BAND-GAP VOLTAGE AND BIAS GENERATION
ONET4291TA
SLLS670 SEPTEMBER 2005
The filter pin provides filtered V
CC
for the photodiode bias. The on-chip, low-pass filter for the photodiode V
CC
is
implemented using a filter resistor of 220
and an internal 200-pF capacitor. The corresponding corner
frequency is below 4 MHz.
The supply voltage for the whole amplifier is filtered by means of an on-chip, 275-pF capacitor as well, thus
avoiding the necessity to use an external supply-filter capacitor.
The voltage drop across the internal photodiode supply-filter resistor is monitored by means of a dc input current
cancellation, AGC, and RSSI control circuit block.
If the dc input current exceeds a certain level, it is partially cancelled by means of a controlled current source.
This measure keeps the transimpedance amplifier stage within sufficient operating point limits for optimum
performance. Furthermore, disabling the dc input cancellation at low input currents leads to superior noise
performance.
The AGC circuitry lowers the effective transimpedance feedback resistor R
F
by means of a MOSFET device
acting as a controlled shunt. This prevents the transimpedance amplifier from being overdriven at high input
currents, which leads to improved jitter behavior within the complete input-current dynamic range. Because the
voltage drop across the supply-filter resistor is sensed and used by the AGC circuit, the photodiode must be
connected to a FILTER pad for the AGC to function correctly.
Finally, this circuit block senses the current through the filter resistor and generates a mirrored current, which is
proportional to the input signal strength. The mirrored current is available at the RSSI output and must be sunk to
ground (GND) using an external resistor. The RSSI gain can be adjusted by choosing the external resistor;
however, for proper operation, ensure that the voltage at the RSSI pad never exceeds V
CC
0.65 V.
The ONET4291TA transimpedance amplifier is supplied by a single, 3.3-V supply voltage connected to the V
CC
pad. This voltage is referred to GND.
On-chip band-gap voltage circuitry generates a supply-voltage-independent reference from which all other
internally required voltages and bias currents are derived.
3
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BOND PAD ASSIGNMENT
6
10
8
7
9
2
3
1
ONET
4291T
A
4
5
M0033-04
GND
GND
GND
OUT
!
RSSI
GND
OUT+
V
CC
FIL
TER
IN
ONET4291TA
SLLS670 SEPTEMBER 2005
The ONET4291TA is available as a bare die. The locations of the bond pads are shown in the following figure.
BOND PAD DESCRIPTION
PAD
TYPE
DESCRIPTION
NAME
NO.
Bias voltage for photodiode (cathode). This pads connects through an internal 220-
resistor to
FILTER
5
Analog
V
CC
and a 200-pF filter capacitor to ground (GND). The FILTER pad(s) must be connected to the
photodiode for the AGC to function.
Circuit ground. All GND pads are connected on die. Bonding all pads is optional; however, for
GND
1, 2, 9, 10
Supply
optimum performance a good ground connection is mandatory.
IN
6
Analog input
Data input to TIA (photodiode anode)
OUT+
3
Analog output
Non-inverted data output. On-chip 50-
back-terminated to V
CC
.
OUT
8
Analog output
Inverted data output. On-chip 50-
back-terminated to V
CC
.
Analog output current proportional to the input data amplitude. Indicates the strength of the
received signal (RSSI). Must be sunk through an external resistor to ground (GND). The RSSI
RSSI
7
Analog output
gain can be adjusted by choosing the external resistor; however, for proper operation, ensure
that the voltage at the RSSI pad never exceeds V
CC
0.65 V. If the RSSI feature is not used,
this pad must be bonded to ground (GND) to ensure proper operation.
V
CC
4
Supply
3.3-V, +10%/12% supply voltage
4
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ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
ONET4291TA
SLLS670 SEPTEMBER 2005
over operating free-air temperature range (unless otherwise noted)
(1)
V
CC
Supply voltage
(2)
0.3 V to 4 V
V
FILTER
, V
OUT+
, V
OUT
,
Voltage at FILTER, OUT+, OUT, RSSI
(2)
0.3 V to 4 V
V
RSSI
I
IN
Current into IN
0.7 mA to 2.5 mA
I
FILTER
Current into FILTER
8 mA to 8 mA
I
OUT+
, I
OUT
Continuous current at outputs
8 mA to 8 mA
ESD rating at all pins except IN
(3)
1.5 kV (HBM)
ESD
ESD rating at IN
(3)
300 V (HBM)
T
J,max
Maximum junction temperature
125
C
T
stg
Storage temperature range
65
C to 85
C
T
A
Operating free-air temperature range
40
C to 85
C
(1)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltage values are with respect to network ground terminal.
(3)
For optimum high-frequency performance, the input pin has reduced ESD protection.
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
V
CC
Supply voltage
2.9
3.3
3.6
V
T
A
Operating free-air temperature
40
85
C
L
FILTER
,
Wire-bond inductor at pins FILTER and IN
0.8
nH
L
IN
C
PD
Photodiode capacitance
0.2
pF
over recommended operating conditions (unless otherwise noted). Typical values are at V
CC
= 3.3 V and T
A
= 25
C.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
CC
Supply voltage
2.9
3.3
3.6
V
Average photodiode current I
PD
= 0
11
17
25
I
VCC
Supply current
mA
mA
V
IN
Input bias voltage
0.85
1.05
V
R
OUT
Output resistance
Single-ended to V
CC
40
50
60
R
FILTER
Photodiode filter resistance
220
5
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AC ELECTRICAL CHARACTERISTICS
ONET4291TA
SLLS670 SEPTEMBER 2005
over recommended operating conditions (unless otherwise noted). Typical values are at V
CC
= 3.3 V and T
A
= 25
C.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
i
IN-OVL
AC input overload current
2
mA
p-p
A
RSSI
RSSI gain
Resistive load to GND
(1)
0.95
1
1.05
A/A
RSSI output offset current (no light)
15
30
A
Z
21
Small-signal transimpedance
Differential output; input current i
IN
=
2300
3200
3900
50
A
p-p
f
H,3dB
Small-signal bandwidth
i
IN
= 50
A
p-p
(2)
2.2
2.8
GHz
f
L,3dB
Low-frequency, 3-dB bandwidth
3 dB, input current i
IN
< 50
A
p-p
40
70
kHz
f
H,3dB,RSSI
RSSI bandwidth
3.5
MHz
i
N-IN
Input referred RMS noise
50 kHz4 GHz
(3)
465
590
nA
Input referred noise current density
8.8
pA/
Hz
i
IN
= 50
A
p-p
(K28.5 pattern)
(4)
10
23
i
IN
= 100
A
p-p
(K28.5 pattern)
(4)
10
30
DJ
Deterministic jitter
ps
p-p
i
IN
= 1 mA
p-p
(K28.5 pattern)
8
28
i
IN
= 2 mA
p-p
(K28.5 pattern)
13
42
V
OUT,D,MAX
Maximum differential output voltage
Input current i
IN
= 1 mA
p-p
140
200
310
mV
p-p
(1)
The RSSI output is a current output, which requires a resistive load to ground (GND). The voltage gain can be adjusted for the intended
application by choosing the external resistor. However, for proper operation of the ONET4291TA, ensure that the voltage at RSSI never
exceeds V
CC
0.65 V.
(2)
The minimum small-signal bandwidth is specified over process corners, temperature, and supply voltage variation. The assumed
photodiode capacitance is 0.2 pF. The bond-wire inductance is 0.8 nH. The small-signal bandwidth strongly depends on environmental
parasitics. Careful attention to layout parasitics and external components is necessary to achieve optimal performance.
(3)
Input referred RMS noise is (RMS output noise)/(gain @ 100 MHz). The maximum input referred noise is specified over process
corners, temperature, and supply voltage variation.
(4)
At small input currents a significant portion of the deterministic jitter (DJ) is caused by duty-cycle distortion (DCD) due to residual offset
in the output signal. Because the TIA is not limiting, the DCD portion of the DJ is removed by the following limiting amplifier. The given
maximum values include DCD as well as six-sigma margin.
6
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TYPICAL CHARACTERISTICS
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
Average Input Current -
A
Input Referred Noise Current - nA
R
M
S
10
100
1k
G001
T
A
- Ambient Temperature -
C
0
100
200
300
400
500
600
700
800
-40 -30 -20 -10 0
10 20 30 40 50 60 70 80 90
Input Referred Noise Current - nA
R
M
S
G002
T
A
- Ambient Temperature -
C
1000
1500
2000
2500
3000
3500
4000
4500
5000
-40 -30 -20 -10 0
10 20 30 40 50 60 70 80 90
T
ransimpedance -
G003
Average Input Current -
A
0
500
1000
1500
2000
2500
3000
3500
4000
0
100 200 300 400 500 600 700 800 900 1000
T
ransimpedance -
G004
ONET4291TA
SLLS670 SEPTEMBER 2005
Typical operating condition is at V
CC
= 3.3 V and T
A
= 25
C.
UNFILTERER INPUT REFERRED NOISE
UNFILTERED INPUT REFERRED NOISE
vs
vs
AVERAGE INPUT CURRENT
AMBIENT TEMPERATURE
Figure 2.
Figure 3.
SMALL-SIGNAL TRANSIMPEDANCE
TRANSIMPEDANCE
vs
vs
AMBIENT TEMPERATURE
AVERAGE INPUT CURRENT
Figure 4.
Figure 5.
7
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T
A
- Ambient Temperature -
C
2.50
2.55
2.60
2.65
2.70
2.75
2.80
2.85
2.90
2.95
3.00
-40 -30 -20 -10 0
10 20 30 40 50 60 70 80 90
Bandwidth - GHz
G005
56
58
60
62
64
66
68
70
f - Frequency - MHz
T
ransimpedance - dB
100
1k
10k
G006
Input Current -
A
P-P
0
2
4
6
8
10
12
14
16
0
400
800
1200
1600
2000
Deterministic Jitter - ps
G008
Average Input Current -
A
0
200
400
600
800
1000
1200
0
200
400
600
800
1000
1200
RSSI Output Current -
A
G007
ONET4291TA
SLLS670 SEPTEMBER 2005
TYPICAL CHARACTERISTICS (continued)
Typical operating condition is at V
CC
= 3.3 V and T
A
= 25
C.
SMALL-SIGNAL BANDWIDTH
SMALL-SIGNAL TRANSFER CHARACTERISTICS
vs
AMBIENT TEMPERATURE
Figure 6.
Figure 7.
RSSI OUTPUT CURRENT
DETERMINISTIC JITTER
vs
vs
AVERAGE INPUT CURRENT
INPUT CURRENT
Figure 8.
Figure 9.
8
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Time - 50 ps/Div
Differential Output V
oltage - 10 mV/Div
G009
Time - 50 ps/Div
Differential Output V
oltage - 10 mV/Div
G010
Time - 50 ps/Div
Differential Output V
oltage - 50 mV/Div
G011
Time - 50 ps/Div
Differential Output V
oltage - 50 mV/Div
G012
ONET4291TA
SLLS670 SEPTEMBER 2005
TYPICAL CHARACTERISTICS (continued)
Typical operating condition is at V
CC
= 3.3 V and T
A
= 25
C.
OUTPUT EYE DIAGRAM AT 4.25 Gbps AND 10-
A
p-p
OUTPUT EYE DIAGRAM AT 4.25 Gbps AND 20-
A
p-p
INPUT CURRENT
INPUT CURRENT
Figure 10.
Figure 11.
OUTPUT EYE DIAGRAM AT 4.25 Gbps AND 100-
A
p-p
OUTPUT EYE DIAGRAM AT 4.25 Gbps AND 1-mA
p-p
INPUT
INPUT CURRENT
CURRENT
Figure 12.
Figure 13.
9
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Time - 50 ps/Div
Differential Output V
oltage - 50 mV/Div
G013
ONET4291TA
SLLS670 SEPTEMBER 2005
TYPICAL CHARACTERISTICS (continued)
Typical operating condition is at V
CC
= 3.3 V and T
A
= 25
C.
OUTPUT EYE DIAGRAM AT 4.25 Gbps AND 2-mA
p-p
INPUT
CURRENT
Figure 14.
10
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APPLICATION INFORMATION
S0097-02
ONET
4291TA
6
10
8
7
9
2
3
1
4
5
V
CC
GND
OUT!
OUT+
RSSI
ONET
4291TA
P
AD#1
220 W
200 pF
275 pF
C
0 to 2 pF
Optional
NBW
C
0.1 F
2
m
C
0.1 F
1
m
ASSEMBLY RECOMMENDATIONS
ONET4291TA
SLLS670 SEPTEMBER 2005
Figure 15
shows an application circuit for an ONET4291TA being used in a typical fiber-optic receiver. The
ONET4291TA converts the electrical current generated by the PIN photodiode into a differential output voltage.
The FILTER input provides a dc bias voltage for the PIN that is low-pass filtered by the combination of the
internal 220-
resistor and 200-pF capacitor. Because the voltage drop across the 220-
resistor is sensed and
used by the AGC circuit, the photodiode must be connected to a FILTER pad for the AGC to function correctly.
The RSSI output is used to mirror the photodiode average current and must be connected via a resistor to GND.
The voltage gain can be adjusted for the intended application by choosing the external resistor. However, for
proper operation of the ONET4291TA, ensure that the voltage at RSSI never exceeds V
CC
0.65 V. If the RSSI
output is not used, it must be grounded.
The OUT+ and OUT pads are internally terminated by 50-
pullup resistors to V
CC
. The outputs must be
ac-coupled (e.g., using C1 = C2 = 0.1
F) to the succeeding device. An additional capacitor, C
NBW
, which is
differentially connected between the two output pins OUT+ and OUT, can be used to limit the noise bandwidth
and thus optimize the noise performance.
Figure 15. Basic Application Circuit
When packaging the ONET4291TA, careful attention to parasitics and external components is necessary to
achieve optimal performance. Recommendations that optimize performance include:
1. Minimize total capacitance on the IN pad by using a low-capacitance photodiode and paying attention to
stray capacitances. Place the photodiode close to the ONET4291TA die to minimize the bond wire length
and thus the parasitic inductance.
2. Use identical termination and symmetrical transmission lines at the ac-coupled differential output pins OUT+
and OUT. A differential capacitor C
NBW
can be used to limit the noise bandwidth.
3. Use short bond-wire connections for the supply terminals V
CC
and GND. Supply-voltage filtering is provided
on-chip. Filtering can be improved by using an additional external capacitor.
11
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CHIP DIMENSIONS AND PAD LOCATIONS
6
10
8
7
9
2
3
1
ONET
4291T
A
4
5
M0033-05
x
y
780 m
m
1
180
m
m
Origin
0,0
M0033-06
x
y
780 m
m
1
180
m
m
Origin
0,0
E
T
1
T
A
PAD#1
ONET4291TA
SLLS670 SEPTEMBER 2005
Overall chip dimensions and depiction of the bond-pad locations are given in
Figure 16
. Layout of the chip
componentry is shown in
Figure 17
.
Figure 16. Chip Dimensions and Pad Locations
Figure 17. Chip Layout
12
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DIE INFORMATION
TO46 LAYOUT EXAMPLES
M0034-03
VCC
OUT+
GND
RSSI
OUT
!
2.54 mm
ONET4291TA
SLLS670 SEPTEMBER 2005
Pad Locations and Descriptions for the ONET4291TA
COORDINATES
PAD
SYMBOL
TYPE
DESCRIPTION
x (
m)
y (
m)
1
100
1063
GND
Supply
Circuit ground
2
100
938
GND
Supply
Circuit ground
3
100
570
OUT+
Analog output
Non-inverted data output
4
90
127
V
CC
Supply
3.3-V supply voltage
5
265
127
FILTER
Analog
Bias voltage for photodiode
6
515
127
IN
Analog input
Data input to TIA
7
690
127
RSSI
Analog output
RSSI output signal
8
680
570
OUT
Analog output
Inverted data output
9
680
938
GND
Supply
Circuit ground
10
680
1063
GND
Supply
Circuit ground
Die size: 1180
m
780
m
Die thickness: 8 mils (203
m)
Pad metallization: 99.5% Al, 0.5% Cu
Pad size: octagonal pads 120
m
100
m
Passivation composition: 6000- silicon nitride
Backside contact: none
Examples for layouts (top view) in 5-pin and 4-pin TO46 headers are given in
Figure 18
and
Figure 19
,
respectively.
Figure 18. TO46 5-Pin Layout Example Using the ONET4291TA
13
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VCC
OUT
!
GND
OUT+
M0034-04
2.54 mm
ONET4291TA
SLLS670 SEPTEMBER 2005
Figure 19. TO46 4-Pin Layout Example Using the ONET4291TA
14
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package
Type
Package
Drawing
Pins Package
Qty
Eco Plan
(2)
Lead/Ball Finish
MSL Peak Temp
(3)
ONET4291TAY
ACTIVE
XCEPT
Y
10
360
Green (RoHS &
no Sb/Br)
Call TI
N / A for Pkg Type
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent
for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com
12-Jan-2006
Addendum-Page 1
IMPORTANT NOTICE
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enhancements, improvements, and other changes to its products and services at any time and to discontinue
any product or service without notice. Customers should obtain the latest relevant information before placing
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and conditions of sale supplied at the time of order acknowledgment.
TI warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with TI's standard warranty. Testing and other quality control techniques are used to the extent TI
deems necessary to support this warranty. Except where mandated by government requirements, testing of all
parameters of each product is not necessarily performed.
TI assumes no liability for applications assistance or customer product design. Customers are responsible for
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amplifier.ti.com
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interface.ti.com
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logic.ti.com
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power.ti.com
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microcontroller.ti.com
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