TC241
780-
488-PIXEL CCD IMAGE SENSOR
SOCS006C AUGUST 1986 REVISED DECEMBER 1991
Copyright
1991, Texas Instruments Incorporated
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
High-Resolution, Solid-State Image Sensor
for NTSC B/W TV Applications
11-mm Image-Area Diagonal, Compatible
With 2/3" Vidicon Optics
754 (H) x 244 (V) Active Elements in
Image-Sensing Area
Low Dark Current
Electron-Hole Recombination Antiblooming
Dynamic Range . . . More Than 60 dB
High Sensitivity
High Photoresponse Uniformity
High Blue Response
Single-Phase Clocking
Solid-State Reliability With No Image
Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
description
The TC241 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip B/W
NTSC TV applications. The device is intended to replace a 2/3-inch vidicon tube in applications requiring small
size, high reliability, and low cost.
The image-sensing area of the TC241 is configured into 244 lines with 780 elements in each line. Twenty-four
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based
on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated
by supplying clocking pulses to the antiblooming gate, which is an integral part of each image- sensing element.
The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements
by one-half of a vertical line during the charge integration period in alternate fields, effectively increasing the
vertical resolution and minimizing aliasing. The device can also be run as a 754 (H) by 244 (V) noninterlaced
sensor with significant reduction in the dark signal.
A gated floating-diffusion detection structure with an automatic reset and voltage reference incorporated on-chip
converts charge to signal voltage. A low-noise, two-stage, source-follower amplifier buffers the output and
provides high output-drive capability.
The TC241 is built using TI-proprietary virtual-phase technology, which provides devices with high blue
response, low dark current, high photoresponse uniformity, and single-phase clocking.
The TC241 is characterized for operation from 10
C to 45
C.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication
Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
SUB
GND
AMP GND
OUT1
OUT2
OUT3
ADB
TDB
SAG
IAG
SUB
SUB
CDB
IDB
TRG
SRG1
SRG2
SRG3
SAG
IAG
ABG
SUB
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
DUAL-IN-LINE PACKAGE
(TOP VIEW)
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
TC241
780-
488-PIXEL CCD IMAGE SENSOR
SOCS006C AUGUST 1986 REVISED DECEMBER 1991
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
functional block diagram
Clearing Drain
Dark-Reference Elements
Amplifiers
OUT2
OUT3
ADB
TDB
SAG
IAG
2
3
4
5
6
7
8
OUT1
9
AMP GND
GND
10
SRG3
SRG2
SRG1
TRG
CDB
13
IDB
14
15
16
17
18
SAG
19
IAG
ABG
20
21
Gates and Serial Registers
Multiplexer, Transfer
Storage Area
Blooming Protection
Image Area With
Top Drain
6 Dummy
Elements
TC241
780-
488-PIXEL CCD IMAGE SENSOR
SOCS006C AUGUST 1986 REVISED DECEMBER 1991
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
sensor topology diagram
Area
Image-Storage
Area
Image-Sensing
488
244
251
251
251
One 1/2-Amplitude Element
Columns
6 Dummy
1
3
753
1
24
8
8
7
780
One 1/2-Amplitude Element
Terminal Functions
TERMINAL
I/O
DESCRIPTION
NAME
NO.
I/O
DESCRIPTION
ABG
21
I
Antiblooming gate
ADB
5
I
Supply voltage for amplifier-drain bias
AMP GND
9
Amplifier ground
CDB
13
I
Supply voltage for clearing-drain bias
GND
10
Ground
IAG
2
I
Image-area gate
IAG
20
I
Image-area gate
IDB
14
I
Supply voltage for input diode bias
OUT1
8
O
Output signal 1
OUT2
7
O
Output signal 2
OUT3
6
O
Output signal 3
SAG
3
I
Storage-area gate
SAG
19
I
Storage-area gate
SRG1
16
I
Serial-register gate 1
SRG2
17
I
Serial-register gate 2
SRG3
18
I
Serial-register gate 3
SUB
1
Substrate and clock return
SUB
11
Substrate and clock return
SUB
12
Substrate and clock return
SUB
22
Substrate and clock return
TDB
4
I
Supply voltage for top-drain bias
TRG
15
I
Transfer gate
All pins of the same name should be connected together externally.
TC241
780-
488-PIXEL CCD IMAGE SENSOR
SOCS006C AUGUST 1986 REVISED DECEMBER 1991
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
detailed description
The TC241 consists of four basic functional blocks: (1) the image-sensing area, (2) the image-storage area,
(3) the multiplexer with serial registers and transfer gates, and (4) the buffer amplifier with charge-detection
nodes. The location of each of these blocks is shown in the functional block diagram.
image-sensing storage areas
Cross sections with potential-well diagrams and top views of image-sensing and storage-area elements are
shown in Figure 1 and Figure 2. As light enters the silicon in the image-sensing area, free electrons are
generated and collected in the potential wells of the sensing elements. During this time, the antiblooming gate
is activated by the application of a burst of pulses every horizontal-blanking interval. This prevents blooming
caused by the spilling of charge from overexposed elements into neighboring elements. After the completion
of integration, the signal charge is transferred into the storage area. To generate the dark reference necessary
in subsequent video-processing circuits for restoration of the video-black level, 23 full columns and one
half-column of elements at the left edge of the image-sensing area are shielded from incident light. Two full
columns and one half-column of elements at the right of the image-sensing area are also shielded from incident
light. The total number of elements per row is 780 (753 active elements plus 25 shielded elements and 2
transitional elements).
multiplexer with transfer gates and serial registers
The multiplexer and transfer-gates transfer charge line by line from the image-element columns into the
corresponding serial register and prepare it for readout. Multiplexing is activated during the horizontal-blanking
interval by applying appropriate pulses to the transfer gates and serial registers. The required pulse timing is
shown in Figure 3. A drain is included in this area to provide the capability to quickly clear the image-sensing
and storage areas of unwanted charge. Such charge can accumulate in the imager during the start-up of
operation or under special circumstances when nonstandard TV operation is desired.
buffer amplifier with charge-detection nodes
The buffer amplifier converts charge into a video signal. Figure 4 shows the circuit diagram of a charge-detection
node and one of the three amplifiers. As charge is transferred into the detection node, the potential of this node
changes in proportion to the amount of signal received. This change is sensed by an MOS transistor and, after
proper buffering, the signal is supplied to the output terminal of the image sensor. After the potential change has
been sensed, the node is reset to a reference voltage supplied by an on-chip reference generator. The reset
is accomplished by a reset gate that is connected internally to the serial register. The detection nodes and
corresponding amplifiers are located some distance from the edge of the storage area; six dummy elements
are used to span this distance. The location of the dummy elements is shown in the functional block diagram.
ABG
IAG
11.5
m
Clocked Barrier
Virtual Barrier
Antiblooming Gate
Virtual Well
Clocked Well
Light
Antiblooming
Clocking Levels
Accumulated Charge
27
m
Figure 1. Charge-Accumulation Process
TC241
780-
488-PIXEL CCD IMAGE SENSOR
SOCS006C AUGUST 1986 REVISED DECEMBER 1991
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
SAG
Channel Stops
Virtual Phase
Clocked Phase
Figure 2. Charge-Transfer Process
TC241
780-
488-PIXEL CCD IMAGE SENSOR
SOCS006C AUGUST 1986 REVISED DECEMBER 1991
6
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Composite
Blanking
SRG3
SRG2
SRG 1
TRG
SAG
IAG
ABG
Blanking Interval
Horizontal
Expanded
Figure 3. Timing Diagram
TC241
780-
488-PIXEL CCD IMAGE SENSOR
SOCS006C AUGUST 1986 REVISED DECEMBER 1991
7
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
OUTn
ADB
SRGn
Two-Stage
Source-
Follower
Amplifier
Reset Gate
and
Output Diode
Detection Node
CCD Register
Virtual
Gate
Clocked
Gate
Reference Generator
Figure 4. Buffer Amplifier and Charge-Detection Node
TC241
780-
488-PIXEL CCD IMAGE SENSOR
SOCS006C AUGUST 1986 REVISED DECEMBER 1991
8
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
spurious-nonuniformity specification
The spurious-nonuniformity specification of the TC241 CCD grades 10, 20, 30, and 40 is based on several
sensor characteristics:
Amplitude of the nonuniform pixel
Polarity of the nonuniform pixel
Black
White
Location of the nonuniformity (see Figure 5)
Area A
Element columns near horizontal center of the area
Element rows near vertical center of the area
Area B
Up to the pixel or line border
Up to area A
Other
Edge of the imager
Up to area B
Nonuniform pixel count
Distance between nonuniform pixels
Column amplitude
The CCD sensors are characterized in both an illuminated condition and a dark condition. In the dark condition,
the nonuniformity is specified in terms of absolute amplitude as shown in Figure 6. In the illuminated condition,
the nonuniformity is specified as a percentage of the total illumination as shown in Figure 7.
B
A
20 Pixels
Lines
11
15 Pixels
Lines
7
Pixels
360
Lines
233
Figure 5. Sensor-Area Map
TC241
780-
488-PIXEL CCD IMAGE SENSOR
SOCS006C AUGUST 1986 REVISED DECEMBER 1991
9
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
mV
Amplitude
t
Illumination
% of Total
t
Figure 6. Pixel-Nonuniformity,
Figure 7. Pixel-Nonuniformity,
Dark Condition
Illuminated Condition
The grade specification for the TC241 is as follows (CCD video-output signal is 50 mV
10 mV):
Pixel-nonuniformity:
DARK CONDITION
ILLUMINATED CONDITION
DISTANCE
PART
NONUNIFORM PIXEL TYPE
TOTAL
SEPARATION
PART
NUMBER
PIXEL
AMPLITUDE x
WHITE
BLACK
W/B
% OF TOTAL
AREA A
AREA B
TOTAL
COUNT
NUMBER
AMPLITUDE, x
(mV)
AREA
AREA
AREA
ILLUMINATION
AREA A
AREA B
COUNT
X
Y
AREA
(
)
A
B
A
B
A
B
TC241-20
x > 3.5
0
0
0
0
0
0
x > 5
0
0
--
--
--
--
TC241-30
2.5 < x
3.5
2
5
2
5
2
5
5.0 < x
7.5
2
5
12
100
80
A
TC241-30
x > 3.5
0
0
0
0
0
0
x > 7.5
0
0
12
100
80
A
TC241 40
3.5 < x
7
3
7
3
7
3
7
7.5 < x
15
3
7
15
TC241-40
x > 7
0
0
0
0
0
0
x > 15
0
0
15
--
--
--
White and black nonuniform pixel pair
The total spot count is the sum of all nonuniform white, black, and white/black pairs in the dark condition added to the number of nonuniform black
pixels in the illuminated condition. The sum of all nonuniform combinations do not exceed the total count.
Column nonuniformity:
PART
COLUMN
AMPLITUDE
WHITE
BLACK
PART
NUMBER
AMPLITUDE, x
(mV)
AREAS
AREAS
NUMBER
(mV)
A AND B
A AND B
TC241-20
x > 0.3
0
0
TC241-30
x > 0.5
0
0
TC241-40
x > 0.7
0
0
TC241
780-
488-PIXEL CCD IMAGE SENSOR
SOCS006C AUGUST 1986 REVISED DECEMBER 1991
10
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
CC
: ADB, CDB, IDB, TDB (see Note 1)
0 V to 15 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
: ABG, IAG, SAG, SRG, TRG
15 V to 15 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
10
C to 45
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
STG
30
C to 85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to the substrate terminal.
recommended operating conditions
MIN
NOM
MAX
UNIT
Supply voltage, VCC
ADB, CDB, IDB, TDB
11
12
13
V
Substrate bias voltage
0
V
High level
1.5
2
2.5
IAG
Intermediate level
5
Low level
10
9
8
SRG1 SRG2 SRG3
High level
1.5
2
2.5
SRG1, SRG2, SRG3
Low level
10
9
8
Input voltage V
High level
2
4
6
V
Input voltage, VI
ABG
Intermediate level
2.5
V
Low level
7
SAG
High level
1.5
2
2.5
SAG
Low level
10
9
8
TRG
High level
1.5
2
2.5
TRG
Low level
10
9
8
IAG, SAG
2.05
Clock frequency, fclock
SRG1, SRG2, SRG3, TRG
4.77
MHz
ABG
2.05
Load capacitance
OUT1, OUT2, OUT3
8
pF
Operating free-air temperature, TA
10
45
C
The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltage
levels.
Adjustment is required for optimal performance.
TC241
780-
488-PIXEL CCD IMAGE SENSOR
SOCS006C AUGUST 1986 REVISED DECEMBER 1991
11
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating ranges of supply voltage and operating
free-air temperature (unless otherwise noted)
PARAMETER
MIN
TYP
MAX
UNIT
Dynamic range (see Note 2)
Antiblooming disabled (see Note 3)
60
dB
Charge-conversion factor
1.4
1.6
1.8
V/e
Charge-transfer efficiency (see Note 4)
0.9999
0.99995
Signal-response delay time,
(see Note 5 and Figure 11)
18
20
22
ns
Gamma (see Note 6)
0.97
0.98
Output resistance
700
800
Noise voltage
1/f noise (5 kHz)
0.13
V/
Hz
Noise voltage
Random noise (f = 100 kHz)
0.11
V/
Hz
Noise-equivalent signal
120
electrons
ADB (see Note 7)
20
Rejection ratio at 4.77 MHz
SRG1, SRG2, SRG3 (see Note 8)
40
dB
ABG (see Note 9)
20
Supply current
5
mA
IAG
12000
SRG1, SRG2, SRG3
120
Input capacitance, Ci
ABG
4000
pF
TRG
350
SAG
14000
All typical values are at TA = 25
C
NOTES:
2. Dynamic range is 20 times the logarithm of the mean-noise signal divided by the saturation-output signal.
3. For this test, the antiblooming gate must be biased at the intermediate level.
4. Charge-transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using
an electrical input signal.
5. Signal-response delay time is the time between the falling edge of the SRG clock pulse and the output-signal valid state.
6. Gamma (
) is the value of the exponent in the equation below for two points on the linear portion of the transfer-function curve (this
value represents points near saturation):
Exposure (2)
Exposure (1)
g
+
Output signal (2)
Output signal (1)
7. ADB rejection ratio is 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ADB.
8. SRGn rejection ratio is 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRGn.
9. ABG rejection ratio is 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG.
TC241
780-
488-PIXEL CCD IMAGE SENSOR
SOCS006C AUGUST 1986 REVISED DECEMBER 1991
12
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
optical characteristics, T
A
= 40
C (unless otherwise noted)
PARAMETER
MIN
TYP
MAX
UNIT
Sensitivity
No IR filter
Measured at VU
150
mV/lx
Sensitivity
With IR filter
U
(see Notes 10 and 11)
19
mV/lx
Saturation signal, Vsat (see Note 12)
Antiblooming disabled, interlace off
320
400
mV
Maximum usable signal, Vuse
Antiblooming enabled, interlace on
180
360
mV
Blooming overload ratio (see Note 13)
Interlace on
100
Blooming-overload ratio (see Note 13)
Interlace off
200
Image-area well capacity
200 x 103
electrons
Smear (see Note 14)
See Note 15
0.00072
Dark current
Interlace off
TA = 21
C
0.027
nA/cm2
Dark signal (see Note 16)
TC241-30
15
mV
Dark signal (see Note 16)
TC241-40
20
mV
Pixel uniformity
Output signal = 50 mV
10 mV
TC241-30
3.5
mV
Pixel uniformity
Output signal = 50 mV
10 mV
TC241-40
5
mV
Column uniformity
Output signal = 50 mV
10 mV
TC241-30
0.5
mV
Column uniformity
Output signal = 50 mV
10 mV
TC241-40
0.7
mV
Shading
Output signal = 100 mV
15%
NOTES: 10. Sensitivity is measured at an integration time of 16.667 ms with a source temperature of 2856 K. A CM-500 filter is used.
11. VU is the output voltage that represents the threshold of operation of antiblooming. VU
1/2 saturation signal.
12. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.
13. Blooming-overload ratio is the ratio of blooming exposure to saturation exposure.
14. Smear is a measure of the error induced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent
to the ratio of the single-pixel transfer time during a fast dump to the exposure time using an illuminated section that is 1/10 of the
image-area vertical height with recommended clock frequencies.
15. Exposure time is 16.67 ms and the fast-dump clocking rate during vertical timing is 2.05 MHz.
16. Dark-signal level is measured from the dummy pixels.
TC241
780-
488-PIXEL CCD IMAGE SENSOR
SOCS006C AUGUST 1986 REVISED DECEMBER 1991
13
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
DR (dynamic range)
+
camera white-clip voltage
V
n
(light input)
Lux
Enabled
With Antiblooming
Blooming Point
Well Capacity
Dependent on
Disabled
With Antiblooming
Blooming Point
Gate High Level
Upon Antiblooming
Level Dependent
DR
Vn
Vsat (min)
Vuse (typ)
Vuse (max)
VO
NOTES: A. Vuse (typ) is defined as the voltage determined to equal the camera white clip. This voltage must be less than Vuse
(max).
B. A system trade-off is necessary to determine the system light sensitivity versus the signal/noise ratio. By lowering
the Vuse (typ), the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the
camera.
Vn = noise-floor voltage
Vsat (min) = minimum saturation voltage
Vuse (max) = maximum usable voltage
Vuse (typ) = typical user voltage (camera white clip)
Figure 8. Typical V
sat
, V
use
Relationship
TC241
780-
488-PIXEL CCD IMAGE SENSOR
SOCS006C AUGUST 1986 REVISED DECEMBER 1991
14
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
Slew rate between 10% and 90% = 70 to 120 V/
s
Ratio t1 : t2 at 2 MHz = 4:3
Ratio t1 : t2 at 1 MHz = 1:1
0%
VIL max
Intermediate Level
VIH min
100%
t1
t2
Figure 9. Typical Clock Waveform for ABG, IAG, and SAG
Slew rate between 10% and 90% = 300 V/
s
Ratio t1 : t2 = 1:1
0%
VIL max
10%
VIH min
100%
t1
t2
Figure 10. Typical Clock Waveform for SRG1, SRG2, SRG3, and TRG
Hold
and
Sample
100%
90%
OUT
SRG
8 V
0%
8 V to 10 V
1.5 V to 2.5 V
CCD Delay
15 ns
10 ns
Figure 11. SRG and CCD Output Waveforms
TC241
780-
488-PIXEL CCD IMAGE SENSOR
SOCS006C AUGUST 1986 REVISED DECEMBER 1991
15
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
VERTICAL MODULATION
TRANSFER FUNCTION
(BARS PARALLEL TO SERIAL REGISTER)
0.4
0.2
0
0
0.2
0.4
0.6
MTF
0.6
0.8
Normalized Spatial Frequency
1
0.8
1
0
3.7
7.4
11.1
14.8
18.5
Spatial Frequency Cycles/mm
= 400 to 700-nm Monochromatic Light
HORIZONTAL MODULATION
TRANSFER FUNCTION
(BARS PERPENDICULAR TO SERIAL REGISTER)
0.4
0.2
0
0
0.2
0.4
0.6
MTF
0.6
0.8
Normalized Spatial Frequency
1
0.8
1
0
8.7
17.4
26.1
34.8
43.5
Spatial Frequency Cycles/mm
= 400 to 700-nm Monochromatic Light
VADB = 12 V
TA = 25
C
VADB = 12 V
TA = 25
C
Figure 12
Figure 13
1
Noise
10
f Frequency Hz
AMPLIFIER NOISE VOLTAGE
vs
FREQUENCY
100
1000
VADB = 12 V
nV/
Hz
103
104
105
106
107
0.1
0.01
1
400
600
800
1000
1200
Responsivity
A/W
Incident Wavelength nm
RESPONSIVITY
vs
WAVELENGTH OF INCIDENT LIGHT
Quantum Efficiency
70%
50%
30%
20%
10%
7%
5%
3%
2%
100%
VADB = 12 V
TA = 25
C
TA = 25
C
Figure 14
Figure 15
TC241
780-
488-PIXEL CCD IMAGE SENSOR
SOCS006C AUGUST 1986 REVISED DECEMBER 1991
16
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
TMS3471C
TL1593
TC241
TMS3472A
4.7
F
+
+
+
+
100
OUT1
OUT2
OUT3
GT3
GT1
GT2
15 pF
14.3-MHz
Oscillator
20 pF
44
43
42
41
40
39
38
37
36
35
34
1
2
3
4
5
6
7
8
9
10
11
33
32
31
30
29
28
27
26
25
24
23
VCC
12
13
14
15
16
17
18
19
20
21
22
L
10
11
16
15
14
13
12
1
2
3
4
5
6
7
8
ADB
10
22
21
20
19
18
17
16
15
14
13
1
2
3
4
5
6
7
8
9
VABG
ABLVL
VABG+
V
TMS3473B
IALVL
VSS
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
9
8
7
6
5
4
3
2
1
11
12
13
14
15
16
17
18
19
47 k
47 k
100
100
100
4.7
F
4.7
F
4.7
F
100
100
100
9
SC (90)
SC
BF
CBLK
CSYNC
CP1
CP2
BCP2
CP2
47 k
47 k
100 pF
11
12
1 k
SH2, 3
SH1
1 k
SH2, 3
SH1
VCC
4.7 k
VCC
ABS2
ABS1
ABS0
ADB
VCC
VSS
V
ABLVL
IALVL
VABG +
VABG
12 V
5 V
10 V
2 V
2.5 V
5 V
4 V
6 V
DC VOLTAGES
10
20
VSS
VAGB+
GND
PD
SAIN
MIDSEL
ABIN
IAIN
I/N
IALVL
VAGB
VCC
SAOUT
ABOUT
IAOUT
ABLVL
VCC
ABSR
IASR
VSS
DLADJ
GND
PD
SRG2,3IN
SRG1IN
TRGIN
2,3PC1
2,3PC2
SSR
10
VSS
20
VSS
1PC2
1PC1
VCC
SRG3OUT
SRG2OUT
SRG1OUT
TRGOUT
VCC
TSR
SUB
ABG
IAG
SAG
SRG3
SRG2
SRG1
TRG
IDB
CDB
SUB
SUB
IAG
SAG
TDB
ADB
OUT3
OUT2
OUT1
AMPGND
GND
SUB
ANLGVCC
AIN1
CIN1
IAN2
CIN2
AIN3
CIN3
ANLG GND
S/H1
S/H2
S/H3
DGTL VCC
OUT1
OUT2
OUT3
DGTL GND
V
CC
CLK2M
HGA
TE
VGA
TE
WHTB
WHT
A
VD
GP
SB
I/N
HIGH
PD
PS
GT
ABIN
PI
SH2, 3
SH1
GND
T
S1
S2, 3
X2
GT1
GT2
GT3
BCPS0
BCPS1
VDS
E/L
FI
BCP1
X1
SUPPORT CIRCUITS
DEVICE
PACKAGE
APPLICATION
FUNCTION
TMS3471CFS
44 pin flatpack
Timing generator
NTSC timing generator
TMS3472ADW
20 pin flatpack with tabs
Serial driver
Driver for SRG1, SRG2, SRG3, and TRG
TMS3473BDW
20 pin small outline
Parallel driver
Driver for ABG, IAG, and SAG
TL1593CNS
16 pin small outline (EIAJ)
Sample and hold
Three-channel sample-and-hold IC
Figure 16. Typical Application Circuit Diagram
Decoupling capacitors are not shown.
TI recommends designing AC coupled systems.
TC241
780-
488-PIXEL CCD IMAGE SENSOR
SOCS006C AUGUST 1986 REVISED DECEMBER 1991
17
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
MECHANICAL DATA
The package for the TC241 consists of a ceramic base, a glass window, and a 22-lead frame. The glass window is
sealed to the package by an epoxy adhesive. The package leads are configured in a dual in-line organization and
fit into mounting holes with 2.54 mm (0.10 in) center-to-center spacings.
(0.217
0.030)
5,50
0,76
3,86 (0.152) MAX
Optical Center
27,81 (1.095) MAX
8,00 (0.315)
23,39 (0.921)
0,25 (0.010)
10,16 (0.400) TYP
2,79 (0.110)
MAX
(0.730)
18,54
2,01 (0.079)
Index Dot
9,35 (0.368)
REF
0,46 (0.018)
2,54 (0.100)
(see Note D)
18,24
(0.718)
2,01 x 2,39
(0.079 x 0.094)
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
C
L
TC241 (22 pin)
Optical
(see Note B)
7/94
NOTES: A. Single dimensions are nominal.
B. The center of the package and the center of the image area are not coincident.
C. The distance from the top of the glass to the image-sensor surface is typically 1,46 mm (0.057 in). The glass is 0,95
0,08 mm thick
and has an index of refraction of 1.53.
D. Each pin centerline is located within 0,25 mm (0.010 in) of its true longitudinal position.
IMPORTANT NOTICE
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any product or service without notice, and advise customers to obtain the latest version of relevant information
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pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE ("CRITICAL
APPLICATIONS"). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER'S RISK.
In order to minimize risks associated with the customer's applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI's publication of information regarding any third
party's products or services does not constitute TI's approval, warranty or endorsement thereof.
Copyright
1998, Texas Instruments Incorporated
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