XP162A12A6PR
Power MOS FET
514
u
P-Channel Power MOS FET
Applications
DMOS Structure
Notebook PCs
Low On-State Resistance : 0.17
(max)
Cellular and portable phones
Ultra High-Speed Switching
On - board power supplies
Gate Protect Diode Built-in
Li - ion battery systems
SOT - 89 Package
General Description
Features
The XP162A12A6PR is a P-Channel Power MOS FET with low on-state
Low on-state resistance : Rds (on) = 0.17
( Vgs = -4.5V )
resistance and ultra high-speed switching characteristics.
Rds (on) = 0.3
( Vgs = -2.5V )
Because high-speed switching is possible, the IC can be efficiently
Ultra high-speed switching
set thereby saving energy.
Operational Voltage : -2.5V
In order to counter static, a gate protect diode is built-in.
Gate protect diode built-in
The small SOT-89 package makes high density mounting possible.
High density mounting : SOT - 89
Pin Configuration
Pin Assignment
PIN NUMBERPIN NAME
G
Gate
D
Drain
S
Source
Equivalent Circuit
Absolute Maximum Ratings
Ta=25
O
C
SYMBOL
RATINGS
UNITS
Vdss
-20
V
Vgss
+ 12
V
Id
-2.5
A
Idp
-10
A
Idr
-2.5
A
Pd
2
W
Tch
150
O
C
Tstg
-55 to 150
O
C
P - Channel MOS FET
( 1 device built-in )
( note ) : When implemented on a ceramic PCB
FUNCTION
2
PARAMETER
1
3
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Storage Temperature
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
SOT - 89 Top View
2
3
G
D
1
S
1
2
3
515
u
Electrical Characteristics
DC characteristics
Ta=25
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Drain Cut-off Current
Idss
Vds = - 20 , Vgs = 0V
- 10
A
Gate-Source Leakage Current
Igss
Vgs =
12 , Vds = 0V
10
A
Gate-Source Cut-off Voltage
Vgs (off )
Id = -1mA , Vds = - 10V
- 0.5
- 1.2
V
Drain-Source On-state Resistance
Id = - 1.5A , Vgs = - 4.5V
0.13
0.17
( note )
Id = - 1.5A , Vgs = - 2.5V
0.22
0.3
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
( note ) : Effective during pulse test.
Dynamic characteristics
Ta=25
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Input Capacitance
Ciss
310
pF
Output Capacitance
Coss
Vds = - 10V , Vgs = 0V
200
pF
Feedback Capacitance
Crss
f = 1 MHz
90
pF
Switching characteristics
Ta=25
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Turn-on Delay Time
td ( on )
5
ns
Rise Time
tr
Vgs = - 5V , Id = - 1.5A
15
ns
Turn-off Delay Time
td ( off )
Vdd = - 10V
55
ns
Fall Time
tf
55
ns
Thermal characteristics
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Thermal Resistance
Implement on a ceramic
( channel - surroundings )
PCB
C / W
62.5
Rth ( ch - a )
Vf
If = - 2.5A , Vgs = 0V
V
- 0.85
- 1.1
Id = - 1.5A , Vds = - 10V
| Yfs |
Rds ( on )
S
4
XP162A12A6PR
Power MOS FET
516
u
-10
-8
-6
-4
-2
0
-3
-2.5
-2
-1.5
-1
-0.5
0
Ta=25, Pulse Test
-2V
-2.5V
-3V
-3.5V
-4.5V
-4V
-5V
-10
-8
-6
-4
-2
0
-5
-4
-3
-2
-1
0
125
25
0
0.1
0.2
0.3
0.4
0.5
-10
-8
-6
-4
-2
0
-1.5A
0.01
0.1
1
-10
-8
-6
-4
-2
0
Vgs=-2.5V
Electrical Characteristics
Drain Current vs. Drain/Source Voltage
Drain Current vs. Gate/Source Voltage
Drain/Source On-State Resistance vs. Drain Current
Drain/Source On-State Resistance vs. Gate/Source Voltage
Drain Current:Id (A)
Vds=-10V, Pulse Test
Ta=-55
Drain/Source Voltage:Vds (V)
Gate/Source Voltage:Vgs (V)
Vgs=-1.5V
Ta=25, Pulse Test
Ta=25, Pulse Test
Id=-2.5A
Gate/Source Voltage:Vgs (V)
Drain Current:Id (A)
Drain/Source On-State Resistance
:Rds(on) ()
Drain/Source On-State Resistance
:Rds(on) ()
Drain Current:Id (A)
-4.5V
0
0.1
0.2
0.3
0.4
0.5
-50
0
50
100
150
-4.5V
-1.5A
Vgs =-2.5V
Id =-2.5A
-1.5A
-2.5A
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
-50
0
50
100
150
Drain/Source On-State Resistance vs. Ambient Temp.
Gate/Source Cut Off Voltage Variance vs. Ambient Temp.
Pulse Test
Vds=-10V, Id=-1mA
Ambient Temperature:Topr ()
Gate/Source Cut Off Voltage Variance
:Vgs(off) Variance (V)
Drain/SourceOn-State Resistance
:Rds(on) ()
Ambient Temperature:Topr ()
517
u
10
100
1000
-20
-15
-10
-5
0
Capacitance:C (pF)
Coss
Ciss
Crss
1
10
100
1000
-5
-4
-3
-2
-1
0
tr
td(on)
td(off)
tf
Electrical Characteristics
Vgs=0V, f=1MHz, Ta=25
Capacitance vs. Drain/Source Voltage
Vgs=-5V, Vdd-10V, PW=10s, duty1%, Ta=25
Switching Time vs. Drain Current
Drain Current:Id (A)
Switching Time:t (ns)
Drain/Source Voltage:Vds (V)
-10
-8
-6
-4
-2
0
0
3
6
9
12
15
Vds=-10V, Id=-2.5A, Ta=25
-10
-8
-6
-4
-2
0
-1
-0.8
-0.6
-0.4
-0.2
0
Vgs=0V, 4.5V
-4.5V
-2.5V
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
Standardized Transition Thermal Resistance vs. Pulse Width
Pulse Width:PW (s)
Standardized Transition Thermal Resistance:s(t)
Single Pulse
Source/Drain Voltage:Vsd (V)
Gate Charge:Qg (nc)
Gate/Source Voltage:Vgs (V)
Reverse Drain Current:Idr (A)
Gate/Source Voltage vs. Gate Charge
Reverse Drain Current vs. Source/Drain Voltage
Ta=25, Pulse Test
Rth(ch-a)=62.5/W, (Implemented on a ceramic PCB)
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