2SC5755
2002-07-22
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5755
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: h
FE
= 400 to 1000 (I
C
= 0.2 A)
Low collector-emitter saturation voltage: V
CE (sat)
= 0.12 V (max)
High-speed switching: t
f
= 25 ns (typ.)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Collector-base voltage
V
CBO
20 V
Collector-emitter voltage
V
CEO
10 V
Emitter-base voltage
V
EBO
7 V
DC I
C
2
Collector current
Pulse I
CP
3.5
A
Base current
I
B
200
mA
DC 500
Collector power
dissipation
t
= 10 s
P
C
(Note)
750
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55 to 150
C
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 20 V, I
E
= 0
100
nA
Emitter cut-off current
I
EBO
V
EB
= 7 V, I
C
= 0
100
nA
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= 10 mA, I
B
= 0
10
V
h
FE
(1)
V
CE
= 2 V, I
C
= 0.2 A
400
1000
DC current gain
h
FE
(2)
V
CE
= 2 V, I
C
= 0.6 A
200
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 0.6 A, I
B
= 12 mA
0.12
V
Base-emitter saturation voltage
V
BE (sat)
I
C
= 0.6 A, I
B
= 12 mA
1.10
V
Rise time
t
r
60
Storage time
t
stg
215
Switching time
Fall time
t
f
See Figure 1 circuit diagram.
V
CC
6 V, R
L
= 10 W
I
B1
= -I
B2
= 12 mA
25
ns
Unit: mm
JEDEC
JEITA
TOSHIBA 2-3S1C
Weight: 0.01 g (typ.)
2SC5755
2002-07-22
2
Marking
W L
Figure 1 Switching Time Test Circuit &
Timing Chart
I
B2
I
B1
20
ms
Output
Input
I
B2
I
B1
R
L
V
CC
Duty cycle
< 1%
2SC5755
2002-07-22
3
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
B
a
se-
e
mi
tte
r sa
tu
rati
on v
o
lta
ge
V
BE (sat)
(V
)
Collector-emitter voltage V
CE
(V)
I
C
- V
CE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Collector current I
C
(A)
h
FE
- I
C
D
C
c
u
rr
en
t
g
a
i
n h
FE
Collector current I
C
(A)
V
CE (sat)
- I
C
C
o
l
l
e
ct
or
-e
mi
tte
r s
a
tu
rati
on
vol
t
age
V
CE (sat)
(V
)
Collector current I
C
(A)
V
BE (sat)
- I
C
Base-emitter voltage V
BE
(V)
I
C
V
BE
h
FE
- I
C
20
30
40
60
10
8
6
4
IB = 2mA
0
0
1.2
0.8
0.4
0.4
0.8
1.2
1.6
2
2.4
0.2
0.6
1.0
0
Common emitter
Ta
= 25 C
Single nonrepetitive pulse
Ta
= 100C
25
-55
0.001
0.001
0.01
0.1
1
0.01 0.1 1
0.003
0.03
0.3
3
0.003
0.03
0.3
Common emitter
IC/IB = 50
Single nonrepetitive pulse
Ta
= 100C
25
-55
0.01
0.001
0.1
1
10
0.01
0.1 1
0.003
0.03
0.3
3
0.03
0.3
3
Common emitter
IC/IB = 50
Single nonrepetitive pulse
0
0.4
0.8
1.2
1.6
2
Ta
= 100C
-55
25
1.6
1.2
0.8
0.4
0
Common emitter
VCE = 2 V
Single nonrepetitive pulse
Ta
= 100C
25
-55
10
0.001
100
1000
10000
0.01
0.1 1
0.003
0.03
0.3
3
30
300
3000
Common emitter
VCE = 2 V
Single nonrepetitive pulse
2SC5755
2002-07-22
4
r
th
t
w
Collector-emitter voltage V
CE
(V)
Safe Operating Area
Col
l
e
c
t
or c
u
rrent
I
C
(A
)
Pulse width t
w
(s)
Tr
ansi
e
nt the
r
m
a
l
r
e
si
st
anc
e
r
th (j-a)
(C
/
W
)
0.001
1
3
10
30
100
1000
0.003
0.01
0.03
0.1
0.3
300
1
3
10
300
1000
30
100
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta
= 25C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
2
)
*: Single nonrepetitive pulse
Ta
= 25C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices
aren't mounted on an FR4
board (glass epoxy, 1.6 mm
thick, Cu area: 645 mm
2
).
These characteristic curves
must be derated linearly with
increase in temperature.
V
CEO
max
10 s*
10 ms*
1 ms*
100
ms*
100 ms*
0.03
0.01
0.1
1
10
30
100
0.03
0.1
0.3
1
10
3
DC operation
(Ta
= 25C)
IC max (continuous)
IC max (pulsed)*
3
0.3
2SC5755
2002-07-22
5
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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