2SK3387
2002-07-22
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
-
F-MOSV)
2SK3387
Switching Regulator, DC-DC Converter and Motor Drive
Applications
4 V gate drive
Low drain-source ON resistance: R
DS (ON)
= 0.08 (typ.)
High forward transfer admittance: Y
fs
= 17 S (typ.)
Low leakage current: I
DSS
= 100 A (V
DS
= 150 V)
Enhancement-mode: V
th
= 0.8~2.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
150 V
Drain-gate voltage (R
GS
= 20 kW) V
DGR
150 V
Gate-source voltage
V
GSS
20 V
DC (Note
1)
I
D
18
Drain current
Pulse (Note 1)
I
DP
54
A
Drain power dissipation (Tc
= 25C)
P
D
100 W
Single pulse avalanche energy
(Note 2)
E
AS
176 mJ
Avalanche current
I
AR
18 A
Repetitive avalanche energy (Note 3)
E
AR
10
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150 C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.25
C/W
Note 1: Please use devices on condition that the channel temperature is
below 150C.
Note 2: V
DD
= 50 V, T
ch
= 25C (initial), L = 800 mH, R
G
= 25 W, I
AR
= 18 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA SC-97
TOSHIBA 2-9F1B
Weight: 0.74 g (typ.)
1
2
3
4
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into S2 pin.
2SK3387
2002-07-22
2
Electrical Characteristics
(Note 4) (Ta
=
=
=
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10
mA
Drain cut-off current
I
DSS
V
DS
= 150 V, V
GS
= 0 V
100
mA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
150
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
0.8
2.0 V
V
GS
= 4 V, I
D
= 9 A
0.09 0.18
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 9 A
0.08 0.12
W
Forward transfer admittance
Y
fs
V
DS
= 10 V, I
D
= 9 A
10
17
S
Input capacitance
C
iss
1380
Reverse transfer capacitance
C
rss
200
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
610
pF
Rise time
t
r
12
Turn-on time
t
on
20
Fall time
t
f
12
Switching time
Turn-off time
t
off
68
ns
Total gate charge (gate-source plus
gate-drain)
Q
g
57
nC
Gate-source charge
Q
gs
43
nC
Gate-drain ("miller") charge
Q
gd
V
DD
~
- 120 V, V
GS
= 10 V, I
D
= 18 A
14
nC
Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin.
(However, while switching times are measured, please don't connect and ground it.)
Source-Drain Diode Ratings and Characteristics
(Note 5) (Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1, 5)
I
DR
1
18 A
Pulse drain reverse current
(Note 1, 5)
I
DRP
1
54 A
Continuous drain reverse current (Note 1, 5)
I
DR
2
1
A
Pulse drain reverse current
(Note 1, 5)
I
DRP
2
4
A
Diode forward voltage
V
DS2F
I
DR1
= 18 A, V
GS
= 0 V
-1.7
V
Reverse recovery time
t
rr
185 ns
Reverse recovery charge
Q
rr
I
DR
= 18 A, V
GS
= 0 V,
dI
DR
/dt
= 100 A/ms
1.3
mC
Note 5: drain, flowing current value between the S2 pin, open the S1 pin
drain, flowing current value between the S1 pin, open the S2 pin
Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin.
Marking
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Type
K3387
Duty <= 1%, t
w
= 10 ms
0 V
10
V
V
GS1
R
L
= 11 W
V
DD
~
- 100 V
I
D
= 9 A
V
OUT
G
S
1
D
4.
7
9
S
2
2SK3387
2002-07-22
3
Fo
rw
ar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
Y
fs
(
S
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
I
D
V
GS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
V
DS
V
GS
Drain current I
D
(A)
Y
fs
I
D
Drain current I
D
(A)
R
DS (ON)
I
D
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(m
W
)
20
16
12
8
4
0
0 1 2 3 4 5
VGS = 3 V
Common source
Tc
= 25C
Pulse test
3.2
3.5
3.8
4
6
8
10
50
40
30
20
10
0
0 2 4 6 8 10
VGS = 2.5 V
Common source
Tc
= 25C
Pulse test
3
3.5
4
6
10
4.5
5
8
0
1
2
3
4
0
ID = 18 A
2 4 6 8 10
12
Common source
Tc
= 25C
Pulse test
3
9
1
1
3
5
10
10
30
50
3 5 10
30 50 100
Common source
VDS = 10 V
Pulse test
25
100
Tc
= -55C
0
0 1 2 3 4 5
10
20
30
Common source
VDS = 10 V
Pulse test
Tc
= -55C
25
100
10
0.1 0.3
0.5
1 3
5
10 30
50
30
50
100
300
500
1000
Common source
Tc
= 25C
Pulse test
4
VGS = 10 V
2SK3387
2002-07-22
4
0
4
8
12
16
0
0
40
80
120
160
20 40 60
VDD = 120 V
VDS
VGS
30
60
Common source
ID = 18 A
Tc
= 25C
Pulse test
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
Gate
th
res
hol
d vol
t
a
ge
V
th
(V
)
Case temperature Tc (C)
R
DS (ON)
Tc
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(m
W
)
Drain-source voltage V
DS
(V)
I
DR
V
DS
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(A
)
Drain-source voltage V
DS
(V)
Capacitance V
DS
C
apaci
t
anc
e C
(p
F)
Case temperature Tc (C)
V
th
Tc
Case temperature Tc (C)
P
D
Tc
Gate
-so
u
r
c
e
v
o
l
t
age
V
GS
(V
)
Total gate charge Q
g
(nC)
Dynamic input/output characteristics
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
-40 0 40 80 120 160
-80
200
Common source
Pulse test
160
120
80
40
0
ID = 18 A
4.5
9
VGS = 10 V
150
100
0
0 40 80
120
160
50
1
3
5
10
30
50
100
0
Common source
Tc
= 25C
Pulse test
-0.4
-0.8
-1.2
-1.6
VGS = 0, -1 V
10
5
3
1
10
0.1
30
50
100
300
500
1000
3000
5000
0.3 0.5
1
3 5
10
30 50 100
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25C
Pulse test
Ciss
Coss
Crss
0
1
2
3
4
-80
-40 0 40 80 120 160
Common source
VDS = 10 V
ID = 1 mA
Pulse test
2SK3387
2002-07-22
5
Safe operating area
D
r
ai
n
cu
rre
nt
I D
(A
)
Channel temperature (initial) Tch (C)
E
AS
T
ch
A
v
al
anc
he
en
er
gy E
AS
(mJ
)
r
th
t
w
Pulse width t
w
(S)
N
o
r
m
al
i
z
ed t
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nc
e
r
th (t)
/R
th (c
h-c)
0.01
0.00001
0.1
1
10
0.0001 0.001
0.01
0.1
1
10
T
PDM
t
Duty
= t/T
Rth (ch-c) = 1.25C/W
0.5
0.2
0.1
Single pulse
0.05
0.02
0.01
0.1
1
0.3
0.5
1
3
5
10
30
50
100
3 10
100
30 300
* Single nonrepetitive pulse
Tc
= 25C
Curves must be derated
linearly with increase in
temperature.
ID max (pulsed) *
ID max
(continuous) *
DC operation
Tc
= 25C
100
ms *
1 ms *
VDSS max
200
160
120
80
40
0
25 50 75 100 125 150
-15 V
15
V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25 W
V
DD
= 50 V, L = 0.8 mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
Drain-source voltage V
DS
(V)
2SK3387
2002-07-22
6
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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