TA8272H
2002-06-20
1
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA8272H
Max Power 43 W BTL 4 ch Audio Power IC
The TA8272H is 4 ch BTL audio power amplifier for car audio
application.
This IC can generate more high power: P
OUT
MAX = 43 W as it
is included the pure complementary PNP and NPN transistor
output stage.
It is designed low distortion ratio for 4 ch BTL audio power
amplifier, built-in stand-by function, muting function, and
diagnosis circuit which can detect output to V
CC
/GND short,
output offset voltage and over voltage input mode.
Additionally, the AUX amplifier and various kind of protector
for car audio use is built-in.
Features
High power : P
OUT
MAX (1) = 43 W (typ.)
(V
CC
= 14.4 V, f = 1 kHz, JEITA max, R
L
= 4 )
:
P
OUT
MAX (2) = 40 W (typ.)
(V
CC
= 13.7 V, f = 1 kHz, JEITA max, R
L
= 4 )
:
P
OUT
(1) = 28 W (typ.)
(V
CC
= 14.4 V, f = 1 kHz, THD = 10%, R
L
= 4 )
:
P
OUT
(2) = 24 W (typ.)
(V
CC
= 13.2 V, f = 1 kHz, THD = 10%, R
L
= 4 )
Built-in diagnosis circuit (pin 25)
Low distortion ratio: THD = 0.02% (typ.)
(V
CC
= 13.2 V, f = 1 kHz, P
OUT
= 5 W, R
L
= 4 )
Low noise: V
NO
= 0.10 mVrms (typ.)
(V
CC
= 13.2 V, R
g
= 0 , G
V
= 26dB, BW = 20 Hz~20 kHz)
Built-in stand-by switch function (pin 4)
Built-in muting function (pin 22)
Built-in AUX amplifier from single input to 4 channels output (pin 16)
Built-in various protection circuit
: Thermal shut down, over voltage, out to GND, out to V
CC
, out to out short
Operating supply voltage: V
CC (opr)
= 9~18 V
Weight: 7.7 g (typ.)
TA8272H
2002-06-20
2
Block Diagram
R
L
R
L
R
L
11
9
8
7
5
2
3
17
18
19
21
24
23
12
15
14
1
20
6
R
L
IN1
IN2
IN3
AUX IN
IN4
13
16
C
1
C
1
C
1
C
1
PRE-GND
10
25
4
22
OUT1 (
+
)
PW-GND1
OUT1 (
-
)
OUT2 (
+
)
PW-GND2
OUT2 (
-
)
OUT3 (
+
)
PW-GND3
OUT3 (
-
)
OUT4 (
+
)
PW-GND4
OUT4 (
-
)
TAB
V
CC1
V
CC2
C
3
R
1
C
4
C
2
: PRE-GND
: PW-GND
STBY
DIAGNOSIS
OUT
RIP MUTE
C
5
C
6
TA8272H
2002-06-20
3
Caution and Application Method
(Description is made only on the single channel.)
1. Voltage
Gain
Adjustment
This IC has no NF (negative feedback) terminals. Therefore, the voltage gain can't adjusted, but it makes
the device a space and total costs saver.
The voltage gain of Amp.1:
G
V1
= 0 dB
The voltage gain of Amp.2A, B:
G
V2
= 20 dB
The voltage gain of BLT Connection: G
V (BTL)
= 6 dB
Therefore, the total voltage gain is decided by expression below.
G
V
= G
V1
+ G
V2
+ G
V (BTL)
= 0 + 20 + 6 = 26 dB
2. Stand-by SW Function
(pin 4)
By means of controlling pin 4 (stand-by terminal)
to high and low, the power supply can be set to ON
and OFF. The threshold voltage of pin 4 is set at
about 3V
BE
(typ.), and the power supply current is
about 2 mA (typ.) at the stand-by state.
Control Voltage of pin 4: V
SB
Stand-by Power V
SB
(V)
ON OFF 0~1.5
OFF ON 3~V
CC
Adjustage of Stand-by SW
(1) Since
V
CC
can directly be controlled to ON or OFF by the microcomputer, the switching relay can be
omitted.
(2) Since the control current is microscopic, the switching relay of small current capacity is satisfactory
for switching
Amp. 1
Input
Amp. 2A
Amp. 2B
Figure 1 Block Diagram
Figure 2 With pin 4 set to High,
Power is turned ON
ON
4
OFF
10 k
W
to BIAS
CUTTING CIRCUIT
2V
BE
V
CC
Power
TA8272H
2002-06-20
4
3. Muting
Function
(pin 22)
The muting time constant is decided by R
1
and C
4
and these parts is related the pop noise at power
ON/OFF.
The series resistance; R
1
must be set up less than 10 kW.
The muting function have to be controlled by a transistor, FET and m-COM port which has I
MUTE
> 250
mA ability.
Terminal 22 must not be pulled up and it shall be controlled by OPEN/LOW.
Figure 5 Mute Attenuation
-
-
-
-
V
MUTE
(V)
Point A voltage: VMUTE (V)
ATT V
MUTE
Mut
e
a
tte
nu
ati
o
n A
T
T
(dB
)
10 k
W
5 k
W
VCC
=
13.2 V
Po
=
10 W
RL
=
4
W
f
=
1 kHz
BW
=
400 Hz~30 kHz
-
100
0
0.4
0.8 1 1.2
1.6 2 2.4 2.8
3
-
80
-
60
-
40
-
20
0
20
Figure 4 Muting Function
R
1
I (100
m
A)
24
I
MUTE
I
MUTE (OFF)
A
V
MUTE
C
4
Conventional Method
V
CC
Large current capacity switch
BATTERY
V
CC
FROM
MICROCOMPUTER
BATTERY
RELAY
V
CC
Small current capacity switch
BATTERY
Stand-By
V
CC
DIRECTLY FROM
MICROCOMPUTER
BATTERY
Stand-By
Stand-by Switch Method
Figure 3
TA8272H
2002-06-20
5
4. AUX
Input
(pin 16)
The pin 16 is for input terminal of AUX
amplifier.
The total gain is 0dB by using of AUX amplifier.
Therefore, the m-COM can directly drive the
AUX amplifier.
BEEP sound or voice synthesizer signal can be
input to pin 16 directly.
When AUX function is not used, this pin must be
connected to PRE-GND (pin 13) via a capacitor.
5.
Diagnosis Output
(pin 25)
This diagnosis output terminal of pin 25 has open collector output structure on chip as shown in Figure 7.
In case diagnosis circuit that detect unusual case is operated, NPN transistor (Q1) or (Q2) is turned on.
It is possible to protect all the system of apparatus as well as power IC protection.
In case of being unused this function, use this IC as open-connection on pin 25.
5.1
In Case of Shorting Output to V
CC
/GND or Over Voltage Power Supplied
NPN transistor (Q1) is turned on.
Threshold of over voltage protection: V
CC
= 22 V (typ.)
5.2
In Case of Shorting Output to Output
NPN transistor (Q1) is turned on and off in response to the input signal voltage.
25
5 V
LED/LCD
ALARM
REGULATOR
OFF
(Flashing)
(Announcement from a speaker.)
(Relay
OFF)
m
-COM
MEMORY (Count and record)
Figure 8 Application 1
Figure 6 AUX Input
20dB AMP.
IN
OUT (
+
)
OUT (
-
)
16
AUX-IN
-
20dB
AUX AMP
m
-COM
Figure 7 Self Diagnosis Output
pin 25: Open collector output (active low)
OUTPUT OFFSET
VOLTAGE
DETECTOR
OUTPUT SHORT
PROTECTOR
OVER VOLTAGE
PROTECTOR
25
Q1
5 V
Q2
5 k
W
Q1 is turned on
GND
5 V
t
Q2 is turned on
TA8272H
2002-06-20
6
5.3 In Case of Appearing Output Offset Voltage by Generating a Large Leakage Current on
the Input Capacitor etc.
NPN transistor (Q2) is turned on while the inverted output voltage level become less than the
threshold level of output offset voltage detector.
t
(
-
) Amp output
Figure 10 Wave Form
Threshold level
V
CC/2
GND
t
Voltage of point (A)
GND
t
Voltage of point (B)
GND
Figure 9 Application and Detection Mechanism
V
ref
Leak or short
Elec. Vol.
V
ref/2
25
5 V
L.P.F.
A
B
To CPU
V
bias
V
DC voltage of (
+
) Amp (at leak)
DC voltage of (
-
) Amp (at leak)
V
CC/2
(normal DC voltage)
Offset voltage (at leak)
*: It is possible to detect the abnormal output offset which is appeared by the large leakage of the input capacitor at
V
ref/2
>
V
bias
(about 1.4 V)
t
TA8272H
2002-06-20
7
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Peak supply voltage (0.2 s)
V
CC (surge)
50 V
DC supply voltage
V
CC (DC)
25 V
Operation supply voltage
V
CC (opr)
18 V
Output current (peak)
I
O (peak)
9 A
Power dissipation
P
D
(Note1)
125
W
Operation temperature
T
opr
-
40~85 C
Storage temperature
T
stg
-
55~150 C
Note1: Package thermal resistance
q
j-T
=
1C/W (typ.)
(Ta
=
25C, with infinite heat sink)
Electrical Characteristics
(unless otherwise specified V
CC
=
=
=
=
13.2 V, f
=
=
=
=
1 kHz, R
L
=
=
=
=
4
W
W
W
W
, Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Quiescent current
I
CCQ
V
IN
=
0
200 400
mA
P
OUT
MAX (1)
V
CC
=
14.4 V, max Power
43
P
OUT
MAX (2)
V
CC
=
13.7 V, max Power
40
P
OUT
(1)
V
CC
=
14.4 V, THD
=
10%
28
Output power
P
OUT
(2)
THD
=
10%
22
24
W
Total harmonic distortion
THD
P
OUT
=
5 W
0.02 0.2 %
Voltage gain
G
V
V
OUT
=
0.775 Vrms (0dBm)
24
26
28
Voltage gain ratio
D
G
V
V
OUT
=
0.775 Vrms (0dBm)
-
1.0 0 1.0
dB
V
NO
(1)
Rg
=
0
W
, DIN45405
0.12
Output noise voltage
V
NO
(2)
Rg
=
0
W
, BW
=
20 Hz~20 kHz
0.10 0.35
mVrms
Ripple rejection ratio
R.R.
f
rip
=
100 Hz, Rg
=
620
W
V
rip
=
0.775 Vrms (0dBm)
40 50
dB
Cross talk
C.T.
Rg
=
620
W
V
OUT
=
0.775 Vrms (0dBm)
65
dB
Output offset voltage
V
OFFSET
-
150 0 150
mV
Input resistance
R
IN
90
k
W
Stand-by current
I
SB
Stand-by
condition
2 10
m
A
V
SB
H
Power:
ON
3.0
V
CC
Stand-by control voltage
V
SB
L
Power:
OFF
0
1.5
V
V
M
H
Mute:
OFF
Open
Mute control voltage
(Note2)
V
M
L
Mute: ON, R
1
=
10 k
W
0
0.5 V
Mute attenuation
ATT M
Mute: ON,
V
OUT
=
7.75 Vrms (20dBm) at
Mute:
OFF.
80 90
dB
Note2: Muting function have to be controlled by open and low logic, which logic is a transistor, FET and
m
-COM port
of I
MUTE
>
250
m
A ability.
This means than the mute control terminal : pin 22 must not be pulled-up.
TA8272H
2002-06-20
8
Test Circuit
R
L
R
L
R
L
11
9
8
7
5
2
3
17
18
19
21
24
23
12
15
14
1
20
6
R
L
IN1
IN2
IN3
IN4
13
C
1
C
1
C
1
C
1
PRE-GND
10
25
4
22
OUT1 (
+
)
PW-GND1
OUT1 (
-
)
OUT2 (
+
)
PW-GND2
OUT2 (
-
)
OUT3 (
+
)
PW-GND3
OUT3 (
-
)
OUT4 (
+
)
PW-GND4
OUT4 (
-
)
TAB
V
CC1
V
CC2
C
3
R
1
C
4
1
m
F
C
2
: PRE-GND
: PW-GND
STBY
DIAGNOSIS
OUT
RIP MUTE
3900
m
F
0.22
m
F
0.22
m
F
0.22
m
F
10
m
F
10 k
W
C
5
0.
1
m
F
0.22
m
F
AUX IN
16
0.22
m
F
C
6
TA8272H
2002-06-20
9
Qui
e
s
c
en
t
cu
rr
ent
I
CCQ
(m
A
)
Output power P
OUT
(W)
T.H.D
P
OUT
T
o
t
a
l
ha
rm
oni
c
di
st
or
ti
on
T
.
H
.
D
(%
)
Power supply voltage VCC (V)
I
CCQ
V
CC
Frequency f (Hz)
T.H.D
f
T
o
t
a
l
ha
rm
oni
c
di
st
or
ti
on
T
.
H
.
D
(%
)
Output power P
OUT
(W)
T.H.D
P
OUT
T
o
t
a
l
ha
rm
oni
c
di
st
or
ti
on
T
.
H
.
D
(%
)
10
0
30
0
400
20
100
200
300
RL
=
0.01
10
0.1
1
100
10
100 k
1 k
10 k
VCC
=
13.2 V
RL
=
4
W
POUT
=
5 W
0.1
100
0.01
0.3
1
30
0.1
1
0.03
0.05
0.3
0.5
0.5
10
3
5
50
10
3
5
100
f
=
1 kHz
RL
=
4
W
1 ch drive
13.2 V
VCC
=
9.0 V
16.0 V
30
50
0.1
100
0.01
0.3 1
30
0.1
VCC
=
13.2 V
RL
=
4
W
1 ch drive
0.03
0.05
0.3
0.5
0.5 10
3
5 50
10
3
5
100
f
=
10 kHz
1 kHz
100 Hz
30
50
TA8272H
2002-06-20
10
Cr
o
s
s
t
a
lk
C.T
.
(
d
B)
Cr
o
s
s
t
a
lk
C.T
.
(
d
B)
Singnal source resistance Rg (
9
)
V
NO
R
g
Outp
ut noi
s
e
v
o
l
t
a
ge
V
NO
(
m
V
rms
)
Frequency f (Hz)
R.R. f
R
i
ppl
e
rej
e
cti
on
rati
o R
.
R
.
(
d
B
)
Frequency f (Hz)
C.T. f (OUT1)
Cr
o
s
s
t
a
lk
C.T
.
(
d
B)
Frequency f (Hz)
C.T.
f
(OUT2)
Frequency f (Hz)
C.T. f (OUT3)
Frequency f (Hz)
C.T.
f
(OUT4)
Cr
o
s
s
t
a
lk
C.T
.
(
d
B)
100
0
100 k
-
70
0
1 k
-
60
-
30
10 k
-
40
-
20
-
50
-
10
VCC
=
13.2 V
Vrip
=
0.775 Vrms (0dBm)
Rg
=
620
W
RL
=
4
W
100
0
100 k
0
300
1 k
50
200
10 k
100
150
250
VCC
=
13.2 V
RL
=
4
W
BW
=
~20 k
100
0
100 k
-
70
0
1 k
-
60
-
30
10 k
-
40
-
20
-
50
-
10
VCC
=
13.2 V
VOUT
=
0.775 Vrms (0dBm)
Rg
=
620
W
RL
=
4
W
OUT1
OUT4
OUT1
OUT2
OUT1
OUT3, 4
OUT1
OUT2, 3
100
0
100 k
-
70
0
1 k
-
60
-
30
10 k
-
40
-
20
-
50
-
10
VCC
=
13.2 V
VOUT
=
0.775 Vrms (0dBm)
Rg
=
620
W
RL
=
4
W
OUT2
OUT1
OUT2
OUT3, 4
OUT2
OUT3, 4
100
0
100 k
-
70
0
1 k
-
60
-
30
10 k
-
40
-
20
-
50
-
10
VCC
=
13.2 V
VOUT
=
0.775 Vrms (0dBm)
Rg
=
620
W
RL
=
4
W
OUT3
OUT4
OUT3
OUT1, 2
OUT3
OUT1, 2
OUT3
OUT4
OUT3
OUT4
100
0
100 k
-
70
0
1 k
-
60
-
30
10 k
-
40
-
20
-
50
-
10
VCC
=
13.2 V
VOUT
=
0.775 Vrms (0dBm)
Rg
=
620
W
RL
=
4
W
OUT4
OUT3
OUT4
OUT1, 2
TA8272H
2002-06-20
11
100
0
100 k
0
40
1 k
5
20
10 k
15
25
10
30
35
VCC
=
13.2 V
RL
=
4
W
VOUT
=
0.775 Vrms (0dBm)
Frequency f (Hz)
G
V
f
V
o
l
t
ag
e g
a
i
n
G
V
(dB
)
Output power P
OUT
/ch (C)
P
D
P
OUT
P
o
w
e
r
di
ssi
p
a
ti
on
P
D
(
W
)
Ambient temperature Ta (C)
P
D
MAX Ta
A
l
l
o
w
abl
e p
o
w
e
r di
s
s
i
pati
o
n
P
D
MA
X
(W
)
25
0
150
0
120
75
60
100
40
20
80
100
50 125
INFINITE HEAT SINK
R
q
HS
=
1
C/W
HEAT SINK (R
q
HS
=
3.5
C/W)
R
q
HS
+
R
q
HC
=
4.5
C/W
NO HEAT SINK
R
q
JA
=
39
C/W
0
10
40
30
50
20
60
70
5
15 20
10
25
0
9 V
13.2 V
16 V
f
=
1 kHz
RL
=
4
W
TA8272H
2002-06-20
12
Package Dimensions
Weight: 7.7 g (typ.)
TA8272H
2002-06-20
13
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
This product generates heat during normal operation. However, substandard performance or malfunction may
cause the product and its peripherals to reach abnormally high temperatures.
The product is often the final stage (the external output stage) of a circuit. Substandard performance or
malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the
product.
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The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EBF
RESTRICTIONS ON PRODUCT USE
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