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Электронный компонент: TB7001FL

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TB7001FL
2004-12-24
1
TOSHIBA Multi Chip Module
TB7001FL
For high current and low voltage applications
Synchronous buck converter module
This product is a synchronous buck switching converter module. The additional components for DC-DC converter are a
PWM control IC, an external inductor, and input and output capacitors.
Features
3 chips (high-side MOSFET, low-side MOSFET, MOSFET gate driver- IC) are in 1 package.
Maximum Input voltage is 19V, it is capable for note-PC applications.
Under voltage lockout and thermal shut down
Keeping off low-side MOSFET function. When load current is low, low-side MOSFET is able to been kept off.
Consequently the efficiency increases at low load condition.
Internal control circuit disable function. The quiescent current is less than 10
A.
High operation frequency
: f
c
= 1MHz (Max.)
High output current
: I
OUT
= 20A (Max.)
High efficiency
:
= 85% (
V
IN
= 12 V
V
OUT
= 1.5 V
I
OUT
= 20A
f
c
= 1MHz)
Maximum ratings
(Ta = 25C)

Characteristics Symbol
Ratings
Unit
V
IN
to PGND voltage
V
IN
30
V
L
X
to PGND voltage
V
LX
-2
30
V
V
DD
to SGND voltage
V
DD
-0.3
6
V
BST to L
X
voltage
V
BST-LX
-0.3
V
DD
+0.3
V
BST to SGND voltage
V
BST
-0.3
30
V
ON/OFF to SGND voltage
V
ON/OFF
-0.3
V
DD
+0.3
V
SD to SGND voltage
V
SD
-0.3
V
DD
+0.3
V
DISBL to SGND voltage
V
DISBL
-0.3
V
DD
+0.3
V
Output RMS current
I
OUT
20 A
Power dissipation
P
D
TBD
W
Operating channel temperature
T
ch-opr
-
40 ~ 150
C
Storage temperature
T
stg
-
55 ~ 150
C











Preliminary
TB7001FL
2004-12-24
2
Package outline

















Top view Side view Bottom view

Block diagram























8.00mm
14
15
28
29
42
43
56
1
8.00m
m
0.85mm
0.20mm
56
1
14
15
28
29
42
43
6.35mm
3.65m
m
0
.
2
5
mm mi
n
.
2.30m
m
0
.
2
5
mm mi
n
2.30mm
3.65mm
0.25mm min.
0.25mm min.
0.25mm min.
0
.
2
5
mm mi
n
0.23m
m
0.50m
m
ON/OFF
+
Level
shift
SD
SGND
BST
L
X
V
DD
PGND
V
IN
19V
5V
0.5V
Driver IC
PGND(IC)
LO
HO
DISBL
Overlap
protection
UVLO
1.5V/20A
TB7001FL
2004-12-24
3
Terminal configurations






















Bottom view




Terminal functions
Name No.
Functions
Notes
CGND
1,51,Tab
Internal driver-IC chip bed
Connect to the SGND
SGND
2
Internal driver-IC signal ground
Connect to the PGND
SD
3
Shut down signal for the low-side MOSFET. When set to low,
the low-side MOSFET is turned off.
BST
4
Connect to the external boot strap capacitor
HO
5
High-side MOSFET gate signal
For monitoring
NC
6,7,8,39
No internal connection. Keep them open.
V
IN
9
20,Tab
Input voltage for the DC-DC converter
L
X
21,40
50,Tab
Switching node. Connect to the output inductor.
PGND 22
38 Power
ground
LO
52
Low-side MOSFT gate signal
For monitoring
PGND(IC)
53
Internal driver-IC power ground
V
DD
54
Supply voltage for the internal driver-IC
DISBL
55
Disable signal for the internal control circuit. When set to low,
the Internal control circuit is disabled. The high-side MOSFET
and low-side MOSFET are turned off.
ON/OFF 56
Input
signal

1
V
IN
2
V
IN
3
4
5
V
IN
6
7
8
9 10 11 12 13 1415
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
V
IN
V
IN
V
IN
V
IN
V
IN
V
IN
V
IN
V
IN
V
IN
NC
NC
V
IN
L
X
L
X
L
X
L
X
L
X
L
X
L
X
L
X
L
X
L
X
NC
PGND
PGND
PGND
PGND
PGND
PGND
PGND
PGND
PGND
PGND
PGND
PGND
L
X
PGND
PGND
PGND
PGND
PGND
CGND
LO
PGND(IC)
DISBL
V
DD
ON/OFF
SGND
SD
BST
CGND
HO
CGND
L
X
L
X
NC
TB7001FL
2004-12-24
4
Recommended PCB footprint























































(unitmm)
TB7001FL
2004-12-24
5
Timing chart















Under voltage lockout : When V
DD
is lower than Under voltage lockout start threshold, the operation is
stopped.
When V
DD
is higher than Under voltage lockout stop threshold, it return to the
normal operation.
(The hysteresis between lockout start and lockout stop is 0.7V.)









ON/OFF
V
DD
L
X
Under voltage lockout
start threshold
Under voltage lockout
stop threshold
TB7001FL
2004-12-24
6
Electrical specifications
(V
DD
=5V , Ta=25
, unless otherwise noted.)
Characteristics Symbol
Terminal
Conditions Min.
Typ.
Max.
Unit
Operating input Voltage
(V
IN
)
V
IN(OPR)
V
IN
-
7
-
19 V
Operating input Voltage
(V
DD
)
V
DD(OPR)
V
DD
-
4.5 5 5.5
V
V
DD
quiescent current
I
DD(OFF)
V
DD
V
DISBL
= 0
-
-
15
A
ON/OFF input current H
I
INH(ON/OFF)
ON/OFF
V
ON/OFF
= 5V
-
0.25 0.4
mA
ON/OFF input current L
I
INL(ON/OFF)
ON/OFF
V
ON/OFF
= 0
-
0
-
mA
SD input current H
I
INH(SD)
SD
V
SD
= 5V
-
0
-
mA
SD input current L
I
INL(SD)
SD
V
SD
= 0
-0.4 -0.25
-
mA
ON/OFF input
rising threshold
V
H(ON/OFF)
ON/OFF
-
2.0
-
-
V
ON/OFF input
falling threshold
V
L(ON/OFF)
ON/OFF
-
-
-
0.8 V
SD input
rising threshold
V
H(SD)
SD
-
2.0
-
-
V
SD input
falling threshold
V
L(SD)
SD
-
-
-
0.8 V
DISBL input
rising threshold
V
H(DISBL)
DISBL
-
2.0
-
-
V
DISBL input
falling threshold
V
L(DISBL)
DISBL
-
-
-
0.8 V
R
DS(ON)(L)
L
X
-PGND I
LX
= 10A
-
5
m
Output ON resistance
R
DS(ON)(H)
V
IN
-L
X
I
LX
= -10A , V
BST-LX
= 5V
-
10
m
ILEAK(H)
V
IN
-L
X
V
IN
= 24V , L
X
= 0
-
-
10
A
Output cut-OFF current
ILEAK(L)
L
X
-PGND V
LX
= 24V , PGND = 0
-
-
100
A
Turn off
t
off
L
X
-
30
-
ns
Switching
time
Turn on
t
on
L
X
V
BST-LX
= 5V
I
LX
=-20A
-
60
-
ns
Internal SBD foreword
voltage
V
F
PGND-L
X
I
DR
=10A
-
0.6 0.7 V
Under voltage lock out
start threshold
V
UVLO
V
DD
-
2.6 2.8 3.1 V
Under voltage lock out
hysteresis
V
hys-UVLO
V
DD
-
-
0.7
-
V
t
off
t
on
ON/OFF
L
X
90%
10%
90%
10%